Data for reference boguslawski-aphyspola-90-735

Doping properties of amphoteric C, Si, and Ge impurities in GaN and AlN

P. Boguslawski, J. Bernholc

Acta Physica Polonica A 90, 735 (1996).

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This item is cited by the following items in the database:

  1. Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects

Contributed by A submitted manuscript, on August 5, 1997 2:34:49 PM

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