Data for reference fewster-apcryst-28-451

Absolute Lattice-Parameter Measurement

P. Fewster, N. Andrew

Applied Crystallography 28, 451 (1995).

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This item is cited by the following items in the database:

  1. Strain relaxation in GaN layers grown on porous GaN sublayers

Contributed by A submitted manuscript, on Wednesday, November 10, 1999 10:09:49 PM

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