B. Monemar

Address

Department of Physics and Measurement Technology, Materials SCience Division, Linköping University, S-581 83 Linköping, SWEDEN

E-mail:<<"bom at ifm.liu.se"> bom at ifm.liu.se

Articles in the MIJ-NSR Database Authored by this Person

• Free Excitons in GaN (1996)
• Optical properties of electron-irradiated GaN (1998)
• Optical Properties of GaNAs Grown by MBE (1998)
• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si (1998)
• Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells (1999)
• Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy (1999)
• Relaxation Phenomena in GaN/ AlN / 6H-SiC Heterostructures (1999)
• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN (1999)
• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells (1999)
• Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures (1999)
• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates' (2000)
• Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN (2001)
• Electronic Properties of Ga(In)NAs Alloys (2001)
• Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells (2002)

last updated Wednesday, October 9, 2002 11:18:12 AM.
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