Walter Schottky Institut, Technische Universität München

Walter Schottky Institut
Technische Universität München, Am Coulombwall
D-85748 Garching
Germany

Articles in MRS Internet Journal of Nitride Semiconductor Research by Authors from this Organization

• PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN (1996)
• Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN (1996)
• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy (1997)
• AlGaN-Based Bragg Reflectors (1997)
• Raman characterization of the optical phonons in Al_xGa_1-xN layers grown by MBE and MOCVD (1997)
• Polarization and band offsets of stacking faults in AlN and GaN (1998)

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