High Pressure Research Center

High Pressure Research Center
01-142 Warsaw
Sokolowska 29/37
Poland

Articles in MRS Internet Journal of Nitride Semiconductor Research by Authors from this Organization

• Surface morphology of as grown and annealed bulk GaN crystals (1996)
• Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen (1996)
• Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy (1996)
• Recent Results in the Crystal Growth of GaN at High N₂ Pressure (1996)
• Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure (1997)
• Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects (1997)
• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals (1998)
• High quality GaN films - growth and properties (1998)
• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena. (1998)
• GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen (1998)
• Native defects and carbon impurity in cubic BN (1998)
• GaN Homoepitaxy for Device Applications (1999)
• The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells (2000)
• Thermal Expansion of GaN at Low Temperatures - A Comparison of Bulk and Homo- and Heteroepitaxial Layers (2000)
• Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD (2000)
• Low dislocation density, high power InGaN laser diodes (2004)

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