4. Physikalisches Institut, Universität Stuttgart

4. Physikalisches Institut
Universität Stuttgart
Pfaffenwaldring 57
Stuttgart 70550, Germany

Articles in MRS Internet Journal of Nitride Semiconductor Research by Authors from this Organization

• RADIATIVE LIFETIME OF EXCITONS IN GaInN/GaN QUANTUM WELLS (1996)
• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy (1997)
• The role of piezoelectric fields in GaN-based quantum wells (1998)
• Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry (1999)

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