Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720

Data for organization msd.lbl.gov

Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720

Articles in MRS Internet Journal of Nitride Semiconductor Research by Authors from this Organization

Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2 (1997)
The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells (2000)
The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN (2000)
Mg Segregation, Difficulties of P-Doping in GaN (2000)
P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire (2003)

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last updated Wednesday, March 17, 2004 6:05:22 PM.

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