Department of Electrical and Electronic Engineering, Meijo University

Department of Electrical and Electronic Engineering
Meijo University
1-501 Shiogamagushi
Tempaku-ku, Nagoya 468
Japan

Articles in MRS Internet Journal of Nitride Semiconductor Research by Authors from this Organization

• Free Excitons in GaN (1996)
• Research on GaN MODFET's (1996)
• Transient four wave mixing experiments on GaN (1997)
• Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN (1997)
• Optical properties of electron-irradiated GaN (1998)
• On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect (1998)
• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells (1999)
• Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures (1999)
• Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells (2002)

© 1999 The Materials Research Society