Ioffe Physical-Technical Institute

Ioffe Physical-Technical Institute
St.Petersburg, 194021
Russia

Articles in MRS Internet Journal of Nitride Semiconductor Research by Authors from this Organization

• Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy (1996)
• Optical Properties of Nitride-based Structures Grown on 6H-SiC (1996)
• Fabrication of GaN mesa structures (1996)
• GaN Layers Grown by HVPE on P-type 6H-SiC Substrates (1996)
• Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals (1997)
• Studies of Mg-GaN grown by MBE on GaAs(111)B substrates (1997)
• Physical Properties of Bulk GaN Crystals Grown by HVPE (1997)
• The role of gaseous species in group-III nitride growth (1997)
• Heterostructure for UV LEDs Based on Thick AlGaN Layers (1998)
• Macro- and microstrains in MOCVD-grown GaN (1998)
• Current status of GaN crystal growth by sublimation sandwich technique (1998)
• Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique (1998)
• Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor (1999)
• Novel approach to simulation of group-III nitrides growth by MOVPE (1999)
• Strain relaxation in GaN layers grown on porous GaN sublayers (1999)
• Influence of Poisson’s ratio uncertainty on calculations of the bowing parameter for strained InGaN layers (2001)

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