Groupe d'Etude des Semiconducteurs, GES-CNRS

Groupe d'Etude des Semiconducteurs
GES-CNRS
CC074 Université Montpellier II, Place E.Bataillon
34095 Montpellier Cedex 5
France

Articles in MRS Internet Journal of Nitride Semiconductor Research by Authors from this Organization

• Raman Determination of the Phonon Deformation Potentials in α-GaN (1996)
• Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire (1996)
• Optical nonlinearities of Gallium Nitride (1997)
• Comparison of Luminescence and Physical Morphologies of GaN Epilayers (1997)
• MOVPE Growth and Structural Characterization of Al_xGa_1-xN (1997)
• Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells (1997)
• Raman study of Ga_1-xAl_xN solid solutions (1997)
• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire. (1997)
• Raman study of resonance effects in Ga_1-xAl_xN solid solutions (1998)
• Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy (2002)
• Semiconductor microcavities: towards polariton lasers (2003)

© 1999 The Materials Research Society