Centre de Recherche sur l'Hétéroépitaxie et ses Applications, CRHEA-CNRS

CRHEA-CNRS
Parc de Sophia Antipolis
Rue Bernard Gregory
06560 Valbonne
France

Articles in MRS Internet Journal of Nitride Semiconductor Research by Authors from this Organization

• Yellow Band and Deep levels in Undoped MOVPE GaN. (1996)
• Alternative N precursors and Mg doped GaN grown by MOVPE (1996)
• Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN (1996)
• Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE. (1996)
• Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature (1997)
• Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors (1997)
• Yellow luminescence in Mg-doped GaN (1997)
• XPS study of Au/GaN and Pt/GaN contacts (1997)
• Temperature behaviour of the yellow emission in GaN (1997)
• p-doping of GaN by MOVPE (1997)
• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire. (1997)
• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy (1998)
• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers (1998)
• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy (1998)
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's (1998)
• Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN. (2000)

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