CEA/Grenoble, Département de Recherche Fondamentale sur la Matière Condensée/SP2M

CEA/Grenoble
Département de Recherche Fondamentale sur la Matière Condensée/SP2M
17 rue des Martyrs
38054 Grenoble Cedex 9
France

Articles in MRS Internet Journal of Nitride Semiconductor Research by Authors from this Organization

• Epitaxial growth of cubic GaN and AlN on Si(001) (1996)
• Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire (1996)
• Evidence of 2D-3D transition during the first stages of GaN growth on AlN (1997)
• MOVPE Growth and Structural Characterization of Al_xGa_1-xN (1997)
• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena. (1998)
• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si (1998)

© 1999 The Materials Research Society