Contents last updated Monday, April 5, 1999 5:04:30 PM.
© 1999 The Materials Research Society
Researchers at Xerox PARC have demonstrated AlGaInN laser diodes operating under continuous-wave (cw) conditions at room temperature. InGaN multi-quantum-well laser diodes were grown on sapphire substrates by metal organic chemical vapor deposition. CW lasing was demonstrated on a series of conventional ridge-waveguide devices with CAIBE etched mirrors and high reflective coating on the facets. For improved thermal management the sapphire substrate was thinned and the devices were mounted p-side up on a copper heatsink. Under cw conditions at a temperature of 20°C the lowest threshold current was near 100 mA with an operating voltage of 6.5 V. The emission wavelength was 401 nm with output powers greater than one mW per facet. The lifetimes of these first cw devices measured at 15°C exceeded one hour.
The work at Xerox PARC was partially supported by DARPA.
From: Michael Kneissl, Ph.D. Member of Research Staff Electronic Materials Laboratory Xerox Palo Alto Research Center 3333 Coyote Hill Road Palo Alto, CA 94304 E-mail: kneissl@parc.xerox.com
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