Dear editors,

Room-temperature pulsed current-injected operation of InGaN multiple quantum
well laser diodes was demonstrated at OSRAM Opto Semiconductors (Regensburg,
Germany). The devices were grown by organometallic vapor phase epitaxy on
SiC substrates. Gain guided lasers with cleaved facets - one facet with high
reflectivity coating - show a threshold current density below 20 kA/cm2 at a
emission wavelength of 420nm. The turn-on voltage is 25V.
A detailed paper will follow.

Sincerely,

Bader Stefan, Lugauer Hans-Juergen, Hahn Berthold, Lell Alfred, Jacob
Ulrich, Bruederl Georg, Baur Johannes, Scheubeck Manfred, Haerle Volker


Stefan Bader
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Osram Opto Semiconductors GmbH & Co. OHG
Wernerwerkstr. 2     D-93049 Regensburg
mailto:  stefan.bader@osram-os.com

© 1999 The Materials Research Society