New in the Literature

• Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment S. Haffouz, V. Kirilyuk, P. R. Hageman, L. Macht, J. L. Weyher, P. K. Larsen, Applied Physics Letters 79, 2390-2392 (2001).
• Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, W. G. Breiland, Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence, Applied Physics Letters 81, 1940 (2002).
• Room-temperature polariton lasers based on GaN microcavities G. Malpuech, A. Di Carlo, A. Kavokin, J. J. Baumberg, M. Zamfirescu, P. Lugli, Applied Physics Letters 81, 412 (2002).
• Low-noise photodetectors based on heterojunctions of AlGaN--GaN V. V. Kuryatkov, H. Temkin, J. C. Campbell, R. D. Dupuis, Applied Physics Letters 78, 3340 (2001).
• Improved solar-blind detectivity using an Al[sub x]Ga[sub 1 - x]N heterojunction p--i--n photodiode C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, J. C. Campbell, Applied Physics Letters 80, 3754 (2002).
• Low-frequency noise in Al[sub 0.4]Ga[sub 0.6]N-based Schottky barrier photodetectors S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, V. Adivarahan, J. Yang, G. Simin, M. Asif Khan, Applied Physics Letters 79, 866 (2001).
• High-speed visible-blind GaN-based indium--tin--oxide Schottky photodiodes N. Biyikli, T. Kartaloglu, O. Aytur, I. Kimukin, E. Ozbay, Applied Physics Letters 79, 2838 (2001).
• Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity N. Biyikli, O. Aytur, I. Kimukin, T. Tut, E. Ozbay, Applied Physics Letters 81, 3272 (2002).
• High-speed GaAs-based resonant-cavity-enhanced 1.3 mu m photodetector I. Kimukin, E. Ozbay, N. Biyikli, T. Kartaloglu, O. Aytur, S. Unlu, G. Tuttle, Applied Physics Letters 77, 3890 (2000).
• Direct evidence for implanted Fe on substitutional Ga sites in GaN U Wahl, A Vantomme, G Langouche, JG Correia, L Peralta, The ISOLDE Collaboration, Applied Physics Letters 78(21), 3217-3219 (2001). Summary: This paper reports on the lattice location of the transition metal Fe in GaN by means of the emission channeling technique. Following 60 keV room temperature implantation of the precursor isotope 59 Mn at a dose of 10E13/cm2 and annealing up to 900°C, the angular distribution of beta particles emitted by the radioactive isotope 59Fe was measured by a position-sensitive electron detector. The beta emission patterns around the [0001], [-1102], [-1101], and [-2113] directions give direct evidence that the majority of Fe (~80%) occupies substitutional Ga sites.
• Effect of dislocations on thermal conductivity of GaN layers D. Kotchetkov, J. Zou, A. A. Balandin, D. I. Florescu, F. H. Pollak, Applied Physics Letters 79, 4316 (2001).
• Electric-field-induced heating and energy relaxation in GaN T. A. Eckhause, Ö. Süzer, Ç. Kurdak, F. Yun, H. Morkoç, Applied Physics Letters 82(18), 3035-3037 (2003).
• Thermal boundary resistance at Ge₂Sb₂Te₅/ZnS:SiO₂ interface E. -K. Kim, S. -I. Kwun, S. -M. Lee, H. Seo, J. -G. Yoon, Applied Physics Letters 76(26), 3864-3866 (2000).
• Thermal conductivity and interfacial thermal resistance of polymeric low k films C. Hu, M. Kiene, P. S. Ho, Applied Physics Letters 79(25), 4121-4123 (2001).
• Molecular-beam epitaxy of GaN/Al[sub x]Ga[sub 1 - x]N multiple quantum wells on R-plane (101-bar 2) sapphire substrates H. M. Ng, Applied Physics Letters 80, 4369 (2002).
• Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth Y. Kim, N. A. Shapiro, H. Feick, R. Armitage, E. R. Weber, Y. Yang, F. Cerrina, Applied Physics Letters 78, 895 (2001).
• Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy G. Namkoong, W. A. Doolittle, A. S. Brown, Applied Physics Letters 77, 4386 (2000).
• Properties of carbon-doped GaN H. Tang, J. B. We bb, J. A. Bardwell, Raymond, Joseph Salzman, C. Uzan-Saguy, Applied Physics Letters 78, 757 (2001).
• Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition Sten Heikman, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra, Applied Physics Letters 81, 439 (2002).
• Ga vacancies and grain boundaries in GaN J. Oila, K. Saarinen, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. E. Twigg, Applied Physics Letters 82, 1021 (2003).
• Characteristics of InGaN laser diodes in the pure blue region S. Nagahama, T. Yanamoto, M. Sano, T. Mukai, Applied Physics Letters 79, 1948 (2001).
• High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors B. Yang, D. J. H. Lambert, T. Li, C. J. Collins, M. M. Wong, U. Chowdhury, R. D. Dupuis, J. C. Campbell, Electronics Letters 36, 1866 (2000).
• Solar-blind Al_xGa_1-xN-based metal-semiconductor-metal ultraviolet photodetectors T. Li, D. J. H. Lambert, A. L. Beck, C. J. Collins, B. Yang, M. M. Wong, U. Chowdhury, R. D. Dupuis, J. C. Campbell, Electronics Letters 36, 1581 (2000).
• Improved solar-blind external quantum efficiency of back-illuminated Al_xGa_1-xN heterojunction pin photodiodes C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, J. C. Campbell, Electronics Letters 38, 824 (2002).
• Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors, A. Balandin, Electronics Letters 36(10), 912 (2000).
• High power 0. 25 µm-gate GaN HEMTs on sapphire with power density 4. 2 W/mm at 10 GHz D. -H. Youn, V. Kumar, J. -H. Lee, R. Schwindt, W. -J. Chang, J. -Y. Hong, C. -M. Jeon, S. -B. Bae, K. -S. Lee, J. -L. Lee, J. -H. Lee, I. Adesida, Electronics Letters 39, 566 (2003).
• GaN N- and P-Type Schottky Diodes: Effect of Dry Etch Damage X. A. Cao, S. J. Pearton, G. T. Dang, A. P. Zhang, F. Ren, J. M. Van Hove, IEEE Transactions on Electron Devices 47(7), 1320-1324 (2000).
• Undoped AlGaN/GaN HEMTs for microwave power amplication L. F. Eastman, V. Tilak, J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov, H. Kim, O. S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, J. R. Shealy, IEEE Transactions on Electron Devices 48(3), 479-485 (2001).
• Epitaxially grown GaN thin-film SAW filter with high velocity and low insertion loss Suk-Hun Lee, Hwan-Hee Jeong, Sung-Bum Bae, Hyun-Chul Choi, Jung-Hee Lee, Young-Hyun Lee, IEEE Transactions on Electron Devices 48, 524 (2001).
• Measurement of temperature in high-power AlGaN/GaN HFETs using Raman scattering M. Kuball, J. M. Hayes, M. J. Uren, T. Martin, J. C. H. Birbeck, R. S. Balmer, B. T. Hughes, IEEE Electron Device Letters 23(1), 7 (2002).
• Very-high power density AlGaN/GaN HEMTs Y-F. Wu, D. Kapolnet, J. P. Ibbetson, P. Parikh, B. P. Keller, U. K. Mishra, IEEE Electron Device Letters 48, 586 (2001).
• 45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes N. Biyikli, I. Kimukin, O. Aytur, M. Gokkavas, M. S. Unlu, E. Ozbay, IEEE Photonics Technology Letters 13, 705 (2001).
• Emission channeling studies of Pr in GaN U Wahl, A Vantomme, G Langouche, JP Araujo, L Peralta, JG Correia, the ISOLDE Collaboration, Journal of Applied Physics 88(3), 1319-1324 (2000). Summary: This papers reports on the lattice location of rare earth Pr in thin film, single-crystalline hexagonal GaN using the emission channeling technique. The angular distribution of beta particles emitted by the radioactive isotope 143Pr was monitored by a position-sensitive electron detector following 60 keV room temperature implantation and annealing up to 900°C. The emission channeling data provide direct evidence that Pr is thermally stable at substitutional Ga sites.
• Spectra and energy levels of Tb3+ (4f8) in GaN JB Gruber, B Zandi, HJ Lozykowski, WM Jadwisienczak, Journal of Applied Physics 92(9), 5127-5132 (2002). Summary: This paper analyzes the cathodoluminescence spectra of rare earth Tb3+ ions implanted and annealed in GaN epilayers. Calculated line splittings and relative intensities based on a site symmetry of D2 give the best overall agreement with the observed data.
• Thermal conductivity of GaN films: Effects of impurities and dislocations J. Zou, D. Kotchetkov, A. A. Balandin, D. I. Florescu, F. H. Pollak, Journal of Applied Physics 92, 2534-2539 (2002).
• Optical Pump-and-Probe Measurement of the Thermal Conductivity of Nitride Thin Films B. C. Daly, H. J. Maris, A. V. Nurmikko, M. Kuball, J. Han, Journal of Applied Physics 92, 3820 (2002).
• Thermoelectric effect spectroscopy of deep levels in semi-insulating GaN U. V. Desnica, M. Pavlovic, Z. -Q. Fang, D. C. Look, Journal of Applied Physics 92, 4126 (2002).
• Al_xGa_1-xN for solar-blind UV detectors P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, M. Razeghi, Journal of Crystal Growth 231, 366 (2001).
• Material optimisation for AlGaN/GaN HFET applications Z. Bougrioua, I. Moerman, N. Sharma, R. H. Wallis, J. Cheyns, K. Jacobs, E. J. Thrush, L. Considine, R. Beanland, J. L. Farvacque, C. Humphreys, Journal of Crystal Growth 230, 573 (2001).
• Etch Characteristics of GaN and BN Materials in Chlorine-Based Plasmas N Medelci, A Tempez, D Starikov, N Badi, I Berishev, A Bensaoula, Journal of Electronic Materials 29(9), 1079-1083 (2000).
• The effects of ion mass, energy, dose. Flux and irradiation temperature on implantation disorder in GaN S. O. Kucheyev, J. S. Williams, J. Zou, C. Jagadish, G. Li, Nuclear Instrumentation and Methods B 178, 209 (2001).
• Demonstration of flame detection in room light background by solar-blind AlGaN pin photodiode A. Hirano, C. Pernot, M. Iwaya, T. Detchprohm, H. Amano, I. Akasaki, Physica Status Solidi A 188, 293 (2001).
• High quantum efficiency AlGaN/GaN solar-blind photodetectors grown by metalorganic chemical vapor deposition M. M. Wong, U. Chowdhury, C. J. Collins, B. Yang, J. C. Denyszyn, K. S. Kim, J. C. Campbell, R. D. Dupuis, Physica Status Solidi A 188, 333 (2001).
• Epitaxial Lateral Overgrowth of GaN B. Beaumont, Ph. Vennéguès, P. Gibart, Physica Status Solidi B 227, 1-43 (2001).
• Dynamics of excitonic recombination and interactions in homoepitaxial GaN K. P. Korona, Physical Review B 65, 235312 (2002).
• Exciton-polariton lasing and amplification based on exciton-exciton scattering in CdTe microcavity quantum wells R. Huang, Y. Yamamoto, R. André, J. Bleuse, M. Muller, H. Ulmer-Tuffigo, Physical Review B 65, 165314 (2002).
• Many-photon coherence of Bose-condensed excitons: Luminescence and related nonlinear optical phenomena Yu. E. Lozovik, I. V. Ovchinnikov, Physical Review B 66, 075124 (2002).
• Bose-Einstein condensation of excitons in a single quantum well Z. G. Koinov, Physical Review B 61, 8411 (2000).
• Evidence of polariton stimulation in semiconductor microcavities F. Boeuf, R. André, R. Romestain, Le Si Dang, E. Péronne, J. F. Lampin, D. Hulin, A. Alexandrou, Physical Review B 62, R2279 (2000).
• Off-branch polaritons and multiple scattering in semiconductor microcavities P. G. Savvidis, C. Ciuti, J. J. Baumberg, D. M. Whittaker, M. S. Skolnick, J. S. Roberts, Physical Review B 64, 075311 (2001).
• Stimulated spin dynamics of polaritons in semiconductor microcavities P. G. Lagoudakis, P. G. Savvidis, J. J. Baumberg, D. M. Whittaker, P. R. Eastham, M. S. Skolnick, J. S. Roberts, Physical Review B 65, 161310 (2002).
• Bose condensation of cavity polaritons beyond the linear regime: The thermal equilibrium of a model microcavity P. R. Eastham, P. B. Littlewood, Physical Review B 64, 235101 (2001).
• ZnO as a material mostly adapted for the realization of room-temperature polariton lasers M. Zamfirescu, A. Kavokin, B. Gil, G. Malpuech, M. Kaliteevski, Physical Review B 65, 161205 (2002).
• Polariton lasing by exciton-electron scattering in semiconductor microcavities G. Malpuech, A. Kavokin, A. Di Carlo, J. J. Baumberg, Physical Review B 65, 153310 (2002).
• Phonon-assisted relaxation kinetics of statistically degenerate excitons in high-quality quantum wells A. V. Soroko, A. L. Ivanov, Physical Review B 65, 165310 (2002).
• Polariton dynamics and Bose-Einstein condensation in semiconductor microcavities D. Porras, C. Ciuti, J. J. Baumberg, C. Tejedor, Physical Review B 66, 085304 (2002).
• Stimulated scattering and its dynamics in semiconductor microcavities at 80 K under nonresonant excitation conditions A. Alexandrou, G. Bianchi, E. Péronne, B. Hallé, F. Boeuf, R. André, R. Romestain, Le Si Dang, Physical Review B 64, 233318 (2001).
• Condensation kinetics for bosonic excitons interacting with a thermal phonon bath L. Banyai, P. Gartner, O. M. Schmitt, H. Haug, Physical Review B 61, 8823 (2000).
• Free excitons in wurtzite GaN A. U. Rodina, M. Dietrich, A. Goldner, L. Eckey, A. Hoffmann, Al. L. Efros, M. Rosen, Physical Review B 64, 115204 (2001).
• Extremely sharp dependence of the exciton oscillator strength on quantum-well width in the GaN/Al[sub x]Ga[sub 1 - x]N system: The polarization field effect M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies, Physical Review B 64, R121304 (2001).
• Relaxation bottleneck and its suppression in semiconductor microcavities A. I. Tartakovskii, et al., Physical Review B 62, R2283 (2000).
• Angle-Resonant Stimulated Polariton Amplifier P. G. Savvidis, J. J. Baumberg, R. M. Stevenson, M. Skolnick, D. M. Whittaker, J. S. Roberts, Physical Review Letters 84, 1547 (2000).
• Comment on ``Critical Velocities in Exciton Superfluidity'' S. G. Tikhodeev, Physical Review Letters 84, 3502 (2000).
• Continuous Wave Observation of Massive Polariton Redistribution by Stimulated Scattering in Semiconductor Microcavities R. M. Stevenson, V. N. Astratov, M. S. Skolnick, D. M. Whittaker, M. Emam-Ismail, A. I. Tartakovskii, P. G. Savvidis, J. J. Baumberg, J. S. Roberts, Physical Review Letters 85, 3680 (2000).
• Polarization Control of the Nonlinear Emission of Semiconductor Microcavities M. D. Martin, G. Aichmayr, L. Viña, R. André, Physical Review Letters 89, 77402 (2002).
• Real-Time Bose-Einstein Condensation in a Finite Volume with a Discrete Spectrum L. Banyai, P. Gartner, Physical Review Letters 88, 210404 (2002).
• Stimulated Scattering of Indirect Excitons in Coupled Quantum Wells: Signature of a Degenerate Bose-Gas of Excitons L. V. Butov, A. L. Ivanov, A. Imamoglu, P. B. Littlewood, A. A. Shashkin, V. T. Dolgopolov, K. L. Campman, et A. C. Gossard et al, Physical Review Letters 86, 5608 (2001).

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