A group at Hewlett Packard Laboratories in Kawasaki, Japan, in
collaboration with The Meijo University group, reported their laser at the
LEOS meeting in November. They claim the first ridge guided, cleaved-facet
nitride laser. Ridge waveguides are important for obtaining single lateral mode operation. The nitride films are grown at Meijo University on A-plane sapphire.
The structure is a separate-confinement heterostructure with 5 InGaN/InGaN quatum wells, GaN guiding layers, and AlGaN cladding layers. The 5 µm wide index-guiding ridge is formed by Cl-based RIE. The cavity length is 500µm. The thresholds are 740 mA, 30 kA/cm2, and 22V.
last updated December 15, 1997 04:48:01 PM.
© 1997 The Materials Research Society
