Report projects ~Billion Dollar Market by 2001

In 1996 the total world market for materials and devices based on Gallium
Nitride (GaN) wide bandgap materials amounted to an estimated
US$227.7 million and is forecasted to exceed US$991.4 million by 2001
according to a report to be published by Elsevier Advanced Technology
next month.

The first edition of GaN & Related Wide Bandgap Materials
provides a detailed insight into the global developments in GaN, SiC and
other opto and electronics materials over the next 5 years and the
implication for both suppliers and users of GaN technology.

New applications for GaN, highlighted in the report, include information
displays, indicators, high density data storage and traffic signals.
Furthermore, variants of the GaN device (containing indium) can reach
into longer wavelengths and these devices may eventually replace
non-GaN LED types.

This new report has been compiled by the publisher of III-Vs Review and
has been designed to supply answers to business decision making and
corporate strategy questions by providing detailed market information
including:-

!	Market figures and forecasts to 2001
!	End user application and device market analysis
!	Geographical demand and supply -North America, Japan,
Europe and Rest of World
!	Analysis of key industry trends: GaN versus SiC for LEDs
and lasers, electronic and optoelectronic devices, white lamp
replacements, MOVPE and MBE technologies
!	In-depth profiles of 33 of the top companies plus a
geographical list if universities and selected industrial
laboratories in the field

Written by Roy Szweda and Keith Gurnett the report will be published in
August by Elsevier Advanced Technology. For a report prospectus,
containing a complete summary and full contents of the report, contact
Alistair Davies on T: +44 (0)1865 843181; F:+44 (0)1865 843971 or
e-mail a.davies@elsevier.co.uk