MIJ-NSR Language Recommendations

To facilitate the clear communication of research results, the MIJ-NSR Journalmaster will from time to time make recommendations concerning language, terminology and conventions to be used in MIJ-NSR papers. Researchers are encouraged to adopt these conventions in all their published work, but especially in any paper submitted for publication in MIJ-NSR.

Recommendation #1: GaN Polarity

The language used in the literature to describe the polarity of GaN has been quite confusing. Some authors have used identical terms to describe opposite situations. This confusion is entirely unnecessary and unfortunate. The situation is particularly bad for wurtzite GaN.

Recommendations:

Ga-Face and N-face
Use Ga-face to describe a surface whose gallium atoms have a single bond point up, normal to the surface. The gallium atoms are bonded to three nitrogen atoms in the direction away from the surface. Remember, a face has one nose. Use N-face for the opposite surface, whose nitrogen atoms have one bond pointing up (and whose gallium atoms have their rears showing, with three bonds pointing out.)
Related Nomenclature
The wurtzite (0001) and zincblende (111)Aor surfaces of GaN are Ga-face. The wurtzite (000(-1)) and zincblende ((-1)(-1)(-1))B surfaces of GaN are N-face. Remember, the A is in gAllium and you measure nitrogen pressure in Bars.
Ga- and N- Termination
Termination should only be used to describe a surface property, and should never be used to describe a bulk polarity. Researchers who are familiar with GaAs research are familiar with As and Ga terminated (100) surfaces. These are polar surfaces, but <100> is not a polar direction; the only difference is which atom comes last. A Ga-face surface might be nitrogen terminated if it is covered with nitrogen, but without flipping the crystal, it will never be N-face
Ga- and N- Polar
Avoid using the terminology Ga-Polar or N-Polar, unless you define your terms.

References

MRS Internet Journal of Nitride Semiconductor Research

last updated August 1, 1997 2:05:45 PM.
© 1997 The Materials Research Society