MIJ-NSR Keyword Index, Keywords starting with X

x-ray

• MOVPE Growth and Structural Characterization of Al_xGa_1-xN
  S. Ruffenach-Clur, Olivier Briot, Bernard Gil, Roger-Louis Aulombard, J. L. Rouviere.

• High-temperature structural behavior of Ni/Au Contact on GaN(0001)
  Chong Cook Kim, Jong Kyu Kim, Jong-Lam Lee, Jung Ho Je, Min-Su Yi, Do Young Noh, Y. Hwu, P. Ruterana.

• Physical Properties of Bulk GaN Crystals Grown by HVPE
  Yu.V. Melnik, K.V. Vassilevski, I.P. Nikitina, A.I. Babanin, V. Yu. Davydov, V.A. Dmitriev.

• MOVPE growth optimization of high quality InGaN films.
  W. Van der Stricht, I. Moerman, P. Demeester, L. Considine, E. J. Thrush, J. A. Crawley.

• Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
  Gon Namkoong, W. Alan Doolittle, Sangbeom Kang, Huang Sa, April S. Brown, Stuart R. Stock .

X-Ray Diffraction

• Characterization of Be-Implanted GaN Annealed At High Temperatures
  C. Ronning, K.J. Linthicum, E.P. Carlson, P.J. Hartlieb, D.B. Thomson, T. Gehrke, R.F. Davis.

• Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
  C. Giannini, E. Carlino, L. Tapfer, F. Höhnsdorf, J. Koch, W. Stolz.

• Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
  A. Pelzmann, S. Strite, A. Dommann, C. Kirchner, Markus Kamp , K. J. Ebeling, A. Nazzal.

• Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  U. Strauss, H. Tews, H. Riechert, R. Averbeck, M. Schienle, B. Jobst, D. Volm, T. Streibl, B. K. Meyer, W. W. Rühle.

• Growth and Doping of AlGaN Alloys by ECR-assisted MBE
  D. Korakakis, H.M. Ng, M. Misra, W. Grieshaber, T.D. Moustakas.

• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. J. Rosner, G. Girolami, Paul T. Fini , J.P. Ibbetson, S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.

• Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
  S. Strite, A. Pelzmann, T. Suski, M. Leszczynski, J. Jun, A. Rockett, Markus Kamp , K. J. Ebeling.

• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
  P. Chen, Rong Zhang, X. F. Xu, Pen Chen, Y. G. Zhou, S. Y. Xie, Y. Shi, B. Shen, S. L. Gu, Z. C. Huang, J. Hu, Y. D. Zheng.

• Properties of InGaN deposited on Glass at Low Temperature
  Tilman Beierlein , S. Strite, A. Dommann, D. J. Smith.

X-ray diffractometry

• Macro- and microstrains in MOCVD-grown GaN
  A. Usikov, V.V. Ratnikov, R. Kyutt, W. V. Lundin, B. Pushnyi, N. M. Shmidt, M.P. Scheglov.

X-ray measurements

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  J. Kozlowski, R. Paszkiewicz, R. Korbutowicz, M. Panek, B. Paszkiewicz, M. Tlaczala.

XPS

• XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces
  R.A. Beach, E.C. Piquette, T.C. McGill.

• Preparation of stoichiometric GaN(0001)-1x1: an XPS study
  S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, H.W. Yeom, H. Miki, M. Oshima.

• Metal/GaN Contacts Studied by Electron Spectroscopies
  Jacques Dumont, Roland Caudano, Robert Sporken, Eva Monroy, Elias Munoz, Bernard Beaumont, Pierre Gibart.

• Core-Level Photoemission From Stoichiometric GaN(0001)-1x1
  S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, M. Oshima.

XRD

• Temperature Effect on the Quality of AlN Thin Films
  Margarita P. Thompson, Andrew R. Drews, Changhe Huang, Gregory W. Auner.

• Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
  S. Stepanov, W.N.Wang, B.S.Yavich, V. Bougrov, Y.T.Rebane, Y.G.Shreter.

• Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x0.15) Grown by Metal-Organic Chemical Vapor Deposition
  J. Wagner, A. Ramakrishnan, D. Behr, M. Maier, N. Herres, M. Kunzer, H. Ogloh, K-H. Bachem.

• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
  Nicolas Grandjean, Jean Massies, Mathieu Leroux, Marguerite Laugt, Pierre Lefebvre, Bernard Gil, Jacques Allegre, Pierre Bigenwald.

  The keywords used in this indexing have been supplied by the authors.

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  Index last updated Tuesday, January 18, 2005 7:48:32 PM.
  © 2005 The Materials Research Society