MIJ-NSR Keyword Index, Keywords starting with T

Tailored Substrates

• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
  K.J. Linthicum, T. Gehrke, D.B. Thomson, K.M. Tracy, E.P. Carlson, T.P. Smith, T.S. Zheleva, C.A. Zorman, M. Mehregany, R.F. Davis.

TEM

• Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy
  Kyoyeol Lee, Keunho Auh.

• Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
  H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel, I. Akasaki.

• Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy
  Tae-Yeon Seong, In-Tae Bae, Y. Zhao, C.W. Tu.

• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
  Nicolas Grandjean, Jean Massies, Mathieu Leroux, Marguerite Laugt, Philippe Vennegues, Stephane Dalmasso, Pierre Ruterana, Lionel Hirsch, Serge Barriere.

• Properties of InGaN deposited on Glass at Low Temperature
  Tilman Beierlein , S. Strite, A. Dommann, D. J. Smith.

• Mg Segregation, Difficulties of P-Doping in GaN
  Zuzanna Liliental-Weber, Mourad Benamara, W. Swider, J. Washburn, I. Grzegory, S. Porowski, R. D. Dupuis, Brian J. Eiting.

• MOVPE Growth and Structural Characterization of Al_xGa_1-xN
  S. Ruffenach-Clur, Olivier Briot, Bernard Gil, Roger-Louis Aulombard, J. L. Rouviere.

• TEM Study of Defects in Laterally Overgrown GaN Layers
  Z. Liliental-Weber, M. Benamara, W. Swider, J. Washburn, J. Park, P.A. Grudowski, C.J. Eiting, R.D. Dupuis.

• Crystal Structure and Defects in Nitrogen-Deficient GaN
  S. Oktyabrsky, K. Dovidenko, A.K. Sharma, V. Joshkin, J. Narayan.

• Study of Thin Films Polarity of Group III Nitrides
  K. Dovidenko, S. Oktyabrsky, J. Narayan, M. Razeghi.

• Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
  J. L. Rouvière, M. Arlery, R. Niebuhr, K. H. Bachem, Olivier Briot.

• Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
  S. Strite, A. Pelzmann, T. Suski, M. Leszczynski, J. Jun, A. Rockett, Markus Kamp , K. J. Ebeling.

• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, Robert F. Davis, H. Tsuda, W. Taki, N. Kuwano, K. Oki.

• TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
  Wendy Lynn Sarney, Lourdes Salamanca-Riba, Vidhya Ramachandran, Randall Feenstra, D. W. Greve.

• Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al_xGa_1-xN Layers Grown by MOCVD
  J. H. Mazur, Mourad Benamara, Z. Liliental-Weber, W. Swider, J. Washburn, C. J. Eiting, R. D. Dupuis.

• TEM Study of Bulk AlN Growth by Physical Vapor Transport
  Wendy Lynn Sarney, Lourdes Salamanca-Riba, Tim Hossain, P. Zhou, H N Jayatirtha, Hyoung Ho Kang, R. D. Vispute, Michael Spencer, Ken Jones.

• The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
  Mourad Benamara, zuzanna Liliental-Weber, J. H. Mazur, W. Swider, J. Washburn, M. Iwaya, I. Akasaki, H. Amano.

temperature

• Free Excitons in GaN
  B. Monemar, J. P. Bergman, I. A. Buyanova, W. Li, H. Amano, I. Akasaki.

temperature effect

• Temperature Effect on the Quality of AlN Thin Films
  Margarita P. Thompson, Andrew R. Drews, Changhe Huang, Gregory W. Auner.

temperature interlayer

• High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer
  M. J. Jurkovic, L. K. Li, B. Turk, W. I. Wang, S. Syed, D. Simonian, H. L. Stormer.

temperature-dependence

• TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
  Wendy Lynn Sarney, Lourdes Salamanca-Riba, Vidhya Ramachandran, Randall Feenstra, D. W. Greve.

templates

• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
  Tanya Milkova Paskova, S. Tungasmita, E Valcheva, E. Svedberg, B. Arnaudov, S. Evtimova, P. Persson, A. Henry, R. Beccard, M. Heuken, B. Monemar.

ternary

• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
  O. Schoen, D. Schmitz, M. Heuken, Holger Juergensen, M. D. Bremser.

ternary alloy

• Surface Morphology and Structure of GaN_xAs_1-x
  J.V. Thordson, O. Zsebök, U. Södervall, T.G. Andersson.

terrace

• Preparation of Sapphire for High Quality III-Nitride Growth
  J. Cui, A. Sun, M. Reshichkov, F. Yun, A. Baski, H. Morkoç.

tertiarybutylhydrazine

• Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine
  Torsten K. Schmidtling, M. Klein, U. W. Pohl, W. Richter.

thermal

• High-temperature structural behavior of Ni/Au Contact on GaN(0001)
  Chong Cook Kim, Jong Kyu Kim, Jong-Lam Lee, Jung Ho Je, Min-Su Yi, Do Young Noh, Y. Hwu, P. Ruterana.

• The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors
  W.L. Liu, V.O. Turin, A.A. Balandin, Y.L. Chen, K.L. Wang.

• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. J. Rosner, G. Girolami, Paul T. Fini , J.P. Ibbetson, S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.

Thermal annealing

• Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
  Michael C.Y. Chan, Kwok-On Tsang, E. Herbert Li, Steven P. DenBaars.

thermal boundary resistance

• The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
  K.A. Filippov, A.A. Balandin.

thermal effects

• Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
  P.P. Ruden, J.D. Albrecht, A. Sutandi, S.C. Binari, K. Ikossi-Anastasiou, M.G. Ancona, R.L. Henry, D.D. Koleske, A.E. Wickenden.

thermal stability

• Thermal Stability of GaN Investigated by Raman Scattering
  M. Kuball, F. Demangeot, J. Frandon, M.A. Renucci, N. Grandjean, O. Briot.

thermo-mechanical stability

• Hardness of bulk single-crystal GaN and AlN
  Ichiro Yonenaga.

thermodynamic

• A Thermodynamic Approach to Ohmic Contact Formation to p-GaN
  Bo Liu, Mikko H. Ahonen, Paul H. Holloway.

thermodynamic instability

• Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
  E. V. Kalashnikov, V. I. Nikolaev.

thermodynamic properties

• Thermodynamic properties of group-III nitrides and related species
  I. N. Przhevalskii, S. Yu. Karpov, Yu. N. Makarov.

these keywords will be used to index your paper)

• Review of polarity determination and control of GaN
  M. Sumiya, S. Fuke.

thick layers

• Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
  T. Paskova, E.B. Svedberg, L.D. Madsen, R. Yakimova, I.G. Ivanov, A. Henry, B. Monemar.

thickness

• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  J. Allègre, P. Lefebvre, J. Camassel, B. Beaumont, Pierre Gibart .

• Pinholes, Dislocations and Strain Relaxation in InGaN
  B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.

thin films

• Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
  Zhigang Mao, Stuart McKernan, C. Barry Carter, Wei Yang, Scott A. McPherson.

• Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
  O.P. Seifert, O. Kirfel, M. Munzel, M.T. Hirsch, J. Parisi, M. Kelly, O. Ambacher.

• Study of Thin Films Polarity of Group III Nitrides
  K. Dovidenko, S. Oktyabrsky, J. Narayan, M. Razeghi.

• New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type A^IIIB^V on sapphire substrates
  M.J. Kotelyanskii, I.M. Kotelyanskii, V.B. Kravchenko.

threading dislocations

• Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  Hugues Marchand , J.P. Ibbetson, Paul T. Fini , Peter Kozodoy , S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.

threshold analysis

• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  Pawel Mackowiak, Wlodzimierz Nakwaski.

Ti/GaN ohmic contacts

• Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts
  Holger Cordes , Y. A. Chang.

tight-binding total energy method

• GaN Nanotubes
  Seung Mi Lee, Young Hee Lee, Yong Gyoo Hwang, J. Elsner, Dirk Porezag, Thomas Frauenheim.

tilt

• Epitaxial Growth and Orientation of GaN on (1 0 0) -LiAlO2
  E. S. Hellman, Z. Liliental-Weber, D. N. E. Buchanan.

• Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates
  Robert F. Davis, Thomas Gehrke, Kevin J. Linthicum, Tsvetanka S. Zheleva, Pradeep Rajagopal, Christian A. Zorman, Mehran Mehregany.

tilting

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober.

time of flight mass spectroscopy of

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  E. Kim, I. Berichev, A. Bensaoula, A. Schultz, K. Waters, W. Zagozdzon-Wosik.

time resolved spectroscopy

• Temperature behaviour of the yellow emission in GaN
  R. Seitz, C. Gaspar, T. Monteiro, E. Pereira, M. Leroux, B. Beaumont, Pierre Gibart .

time-resolved

• Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells
  B. Monemar, P.P.Paskov, J. P. Bergman, G. Pozina, V. Darakchieva, M. Iwaya, Satoshi Kamiyama, H. Amano, I. Akasaki.

• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  J. Allègre, P. Lefebvre, J. Camassel, B. Beaumont, Pierre Gibart .

• Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
  J. Allègre, P. Lefebvre, S. Juillaguet, W. Knap, J. Camassel, Q. Chen, M. A. Khan.

time-resolved photolumiescence

• On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation
  F.Shahedipour, B.W.Wessels.

time-resolved photoluminescence

• Time-Resolved Spectroscopy of InGaN
  Milan Pophristic, Frederick H Long, C. Tran, I. T. Ferguson.

time-resolved photoluminescence ; piezoelectric effect ; spontaneous polarization

• Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
  Pierre Lefebvre, Bernard Gil, Jacques Allegre, Henry Mathieu, Nicolas Grandjean, Mathieu Leroux, Jean Massies.

titanium nitride

• The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride
  Pierre Ruterana, Gerard Nouet Nouet, Thomas Kehagias, Philomela Komninou, Theodoros Karakostas, Marie Antoinette di Forte Poisson, Frederik Huet.

transconductance

• Fabrication and Characterization of GaN Junction Field Effect Transistors
  Lei Zhang, Luke F. Lester, Albert G. Baca, Randy J. Shul, Ping C. Chang, Christi G. Willison, Umesh K. Mishra, Steve P. Denbaars, John C. Zolper.

transient spectroscopy

• Electrical Measurements in GaN: Point Defects and Dislocations
  David C Look, Zhaoqiang Fang, Laura Polenta.

Transistor

• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
  M.J. Murphy, B.E. Foutz, K. Chu, H. Wu, W. Yeo, W.J. Schaff, O. Ambacher, L.F. Eastman, T.J. Eustis, R. Dimitrov, M. Stutzmann, W. Rieger.

• Research on GaN MODFET's
  L. Eastman, J. Burm, W. Schaff, M. Murphy, K. Chu, H. Amano, I. Akasaki.

transitions.

• The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
  Alexey V. Dmitriev, Alexander L. Oruzheinikov.

transmission

• Properties of InGaN deposited on Glass at Low Temperature
  Tilman Beierlein , S. Strite, A. Dommann, D. J. Smith.

• Effect of internal absorption on cathodoluminescence from GaN
  Klaus Knobloch, Piotr Perlin , Joachim Krueger, Eicke R. Weber , Christian Kisielowski.

transmission electron microscopy

• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
  Tsvetanka S. Zheleva, Scott A. Smith, Darren B. Thomson, Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Eric Carlson, Waeil M. Ashmawi, Robert F. Davis.

• Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content
  AndrŽ Vantomme, Ming Fang Wu, Susan Hogg, Guido Langouche, Koen Jacobs, Ingrid Moerman, Madeleine White, Kevin O'Donnell, Leona Nistor, Jef Van Landuyt, Hugo Bender.

• Cubic GaN Heteroepitaxy on Thin-SiC Covered Si(001)
  Yuichi Hiroyama, Masao Tamura.

• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  A. Sohmer, J. Off, H. Bolay, V. Härle, V. Syganow, Jin Seo Im, V. Wagner, F. Adler, Andreas Hangleiter , A. Dörnen, Ferdinand Scholz, D. Brunner, O. Ambacher, H. Lakner.

• A TEM Study of GaN Grown by ELO on (0001) 6H-SiC
  Pierre Ruterana, Bernard Beaumont, Pierre Gibart, Yu Melnik.

• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. J. Rosner, G. Girolami, Paul T. Fini , J.P. Ibbetson, S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.

transparent conductor

• Properties of InGaN deposited on Glass at Low Temperature
  Tilman Beierlein , S. Strite, A. Dommann, D. J. Smith.

transport

• Monte Carlo Simulation of Hall Effect in n-Type GaN
  J.D. Albrecht, P.P. Ruden, E. Bellotti, K.F. Brennan.

transport measurements

• Metal Contacts on -GaN
  T. U. Kampen, W. Mönch.

transport modeling

• Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
  Michael E. Coltrin, Christine C. Willan, Michael E. Bartram, Jung Han, Nancy Missert, Mary H. Crawford, Albert G. Baca.

Transport properties

• Ensemble Monte Carlo Study of Electron Transport in Bulk InN
  E. Bellotti, B. Doshi, K.F. Brennan, P.P. Ruden.

treatment

• Photoluminescence of FS-GaN Treated in Alcoholic Sulfide Solutions
  Y.V. Zhilyaev, M.E. Kompan, E.V. Konenkova, S.D. Raevskii.

• High-Quality Non-Alloyed Pt Ohmic Contacts to p-Type GaN Using Two-step Surface Treatment
  Ja-Soon Jang, Seong-Ju Park, Tae-Yeon Seong.

tungsten

• Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
  Hideto Miyake, Motoo Yamaguchi, Masahiro Haino, Atsushi Motogaito, Kazumasa Hiramatsu, Shingo Nambu, Yasutoshi Kawaguchi, Nobuhiko Sawaki, Yasushi Iyechika, Takayoshi Maeda, Isamu Akasaki.

tunnel

• Luminescence Spectra Of Superbright Blue and Green InGaN/AlGaN/GaN Light-Emitting Diodes
  K. G. Zolina, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, Shuji Nakamura .

two-dimensional electron gas

• Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors
  Narihiko Maeda, Tadashi Saitoh, Kotaro Tsubaki, Toshio Nishida, Naoki Kobayashi.

two-electron

• Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
  B.J. Skromme.

  The keywords used in this indexing have been supplied by the authors.

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  Index last updated Tuesday, January 18, 2005 7:48:26 PM.
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