MIJ-NSR Keyword Index, S

MIJ-NSR Keyword Index, Keywords starting with S

s ratio

Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
S. Stepanov, W.N.Wang, B.S.Yavich, V. Bougrov, Y.T.Rebane, Y.G.Shreter.

S-K growth mode

Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
Chang-Hee Hong, Ki Soo Kim, Won-Hee Lee, Chi Sun Kim, Ok Hwan Cha, Gye Mo Yang, Eun-Kyung Suh, Kee Young Lim, Hyung Jae Lee, Hyung Koun Cho, Jeong Yong Lee, Jae Myung Seo.

SAE

GaN: From Selective Area Epitaxy To Epitaxial Lateral Overgrowth
X. Li, S.G. Bishop, J.J. Coleman.

SAG

Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via MOVPE
Kazuyuki Tadatomo, Yoichiro Ohuchi, Hiroaki Okagawa, Hirotaka Itoh, Hideto Miyake, Kazumasa Hiramatsu.

SAW

Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications
Jae-Hoon Lee, Myoung-Bok Lee, Sung-Ho Hahm, Yong-Hyun Lee, Jung-Hee Lee, Young- Ho Bae, Hyun Kyung Cho.

scanning

GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
A. Sohmer, J. Off, H. Bolay, V. Härle, V. Syganow, Jin Seo Im, V. Wagner, F. Adler, Andreas Hangleiter , A. Dörnen, Ferdinand Scholz, D. Brunner, O. Ambacher, H. Lakner.

scanning electron

Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
A. Petersson, Anders Gustafsson , L. Samuelson, Satoru Tanaka , Yoshinobu Aoyagi.

scanning tunneling microscopy

Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
Huajie Chen, A.R. Smith, R.M. Feenstra, D.W. Greve, J.E. Northrup.

scattering

The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films
Martin Kuball, J.M. Hayes, T. Suski, J. Jun, H. H. Tan, J. S. Williams, C. Jagadish.

Schottky

A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire Substrates
Anand V Sampath, Mira Misra, K. Seth, Y. Fedyunin, H. M. Ng, E. Iliopoulos, Z. Feit, Theodore Moustakas.
Effect of Photo-Assisted RIE Damage on GaN
Z. Mouffak, N. Medelci-Djezzar, C. Boney, A. Bensaoula, L. Trombetta.
Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy
Mira Misra, Anand V Sampath, Theodore Moustakas.
Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
E. Monroy, F. Calle, E. Muñoz, F. Omnes, B. Beaumont, Pierre Gibart , J. A. Muñoz, F. Cusso.

Schottky barrier

Metal Contacts on -GaN
T. U. Kampen, W. Mönch.
XPS study of Au/GaN and Pt/GaN contacts
R. Sporken, C. Silien, F. Malengreau, K Grigorov, R. Caudano, F. J. Sánchez, E. Calleja, E. Muñoz, B. Beaumont, Pierre Gibart .

Schottky barrier diodes

DLTS Characterization of Defects Introduced During Sputter Deposition of Au Schottky Contacts on n-GaN
F.D. Auret, S.A. Goodman, F.K. Koschnick, J-M. Spaeth, B. Beaumont, P. Gibart.

Schottky contact

Contact Issues for GaN Technology
D. Qiao, L.S. Yu, S.S.Lau, G. J. Sullivan, S. Ruvimov, Z. Liliental-Weber.

Schottky diode rectifier

Growth and Device Performance of GaN Schottky Rectifiers
Jen-Inn Chyi , C. -M. Lee, C.C.Chuo, G. C. Chi, G. T. Dang, A. P. Zhang, Fan Ren , X.A. Cao, S.J. Pearton, S. N. G. Chu, R. G. Wilson.

Schottky diodes

High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
Anping Zhang, Gerard Dang, F. Ren, X.A. CAo, H. Cho, E.S. Lambers, S.J. Pearton, R.J. Shul, L. Zhang, A.G. Baca, R. Hickman, J.M. Van Hove.
Schottky Diodes on MOCVD Grown AlGaN Films.
A. Y. Polyakov, N.B. Smirnov, A.V. Govorkov, D. W. Greve, M. Skowronski, M. Shin, Joan M. Redwing.

Schottky photodiode

High-Performance Solar-Blind AlGaN Schottky Photodiodes
Necmi Biyikli, Tolga Kartaloglu, Orhan Aytur, Ibrahim Kimukin, Ekmel Ozbay.
High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes
Necmi Biyikli, Tolga Kartaloglu, Orhan Aytur, Ibrahim Kimukin, Ekmel Ozbay.

screening

Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
B. Monemar, J.P. Bergman, J. Dalfors, G. Pozina, B.E. Sernelius, P.O. Holtz, H. Amano, I. Akasaki.
Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
B. Monemar, J. P. Bergman, J. Dalfors, G. Pozina, B.E. Sernelius, P.O. Holtz, H. Amano, I. Akasaki.
Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
Jin Seo Im, H. Kollmer, O. Gfrorer, J. Off, F. Scholz, A. Hangleiter.

seeded growth

Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin, Z. Sitar.

segregation

The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy
P. Li, Soo-jin Chua, M Hao, W. Wang, X. Zhang, T. Sugahara, S. Sakai.

selective area

Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.

selective area epitaxy

Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
Hugues Marchand , J.P. Ibbetson, Paul T. Fini , Peter Kozodoy , S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.
GaN: From Selective Area Epitaxy To Epitaxial Lateral Overgrowth
X. Li, S.G. Bishop, J.J. Coleman.

selective area growth

A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
John T Torvik , M. Leksono, J. I. Pankove, B. Van Zeghbroeck.
Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Using Tungsten Mask
Yasutoshi Kawaguchi, Shingo Nambu, Hiroki Sone, Masahito Yamaguchi, Hideto Miyake, Kazumasa Hiramatsu, Nobuhiko Sawaki, Yasushi Iyechika, Takayoshi Maeda.

selective growth

Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
D.B. Thomson, T. Gehrke, K.J. Linthicum, P. Rajagopal, R.F. Davis.
Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
Tsvetanka S. Zheleva, Scott A. Smith, Darren B. Thomson, Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Eric Carlson, Waeil M. Ashmawi, Robert F. Davis.
Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
Zhigang Mao, Stuart McKernan, C. Barry Carter, Wei Yang, Scott A. McPherson.
TEM Study of Defects in Laterally Overgrown GaN Layers
Z. Liliental-Weber, M. Benamara, W. Swider, J. Washburn, J. Park, P.A. Grudowski, C.J. Eiting, R.D. Dupuis.

self-assembling formation

Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant
H. Hirayama, Y. Aoyagi, S. Tanaka.

self-heating

The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
K.A. Filippov, A.A. Balandin.

self-heating effect

The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors
W.L. Liu, V.O. Turin, A.A. Balandin, Y.L. Chen, K.L. Wang.

selfcompensation

Studies on Carbon As Alternative p-Type Dopant for GaN
U. Birkle, M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel, S. Strauf, P. Michler, J. Gutowski.

SEM

Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
Zhonghai Yu, M.A.L. Johnson, J.D. Brown, N.A. El-Masry, J.F. Muth, J.W. Cook, Jr., J.F. Schetzina, K.W. Haberern, H.S. Kong, J.A. Edmond.

Semi-insulating GaN

Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications
Jae-Hoon Lee, Myoung-Bok Lee, Sung-Ho Hahm, Yong-Hyun Lee, Jung-Hee Lee, Young- Ho Bae, Hyun Kyung Cho.

semiconductor

Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
M.P. Mack, A. Abare, M. Aizcorbe, Peter Kozodoy , S. Keller, U. K. Mishra, L. Coldren, Steven DenBaars .
Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
T. Gehrke, K.J. Linthicum, D.B. Thomson, P. Rajagopal, A.D. Batchelor, R.F. Davis.

Semiconductor alloys

Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
M. Gherasimova, B. Gaffey, P. Mitev, L.J. Guido, K.L. Chang, K.C. Hsieh, S. Mitha, J. Spear.

semiconductor heterostructures

Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
C. Giannini, E. Carlino, L. Tapfer, F. Höhnsdorf, J. Koch, W. Stolz.

semiconductor surface

Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
R. M. Feenstra, J. E. Northrup, Jörg Neugebauer.

separate confinement heterostructure

Microstructure-based Lasing in GaN/AlGaN Separate Confinement Heterostructures
Sergiy Bidnyk, Jack Biu Lam, Brian Dean Little, Gordon Hall Gainer, Yong-Hwan Kwon, Jin-Joo Song, Gary E. Bulman, Hua-Shuang Kong.

shallow donors

Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
A. M. Witowski, M. L. Sadowski, K. Pakula, B. Suchanek, R. Stepniewski, Jacek M. Baranowski , M. Potemski, G. Martinez, P. Wyder.

Si

Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
K.J. Linthicum, T. Gehrke, D.B. Thomson, K.M. Tracy, E.P. Carlson, T.P. Smith, T.S. Zheleva, C.A. Zorman, M. Mehregany, R.F. Davis.
Microstructure of GaN Grown on (111) Si by MOCVD
D.M. Follstaedt, J. Han, P. Provencio, J.G. Fleming.
Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
Jong-Hee Kim, Gye Mo Yang, Sung Chul Choi, Ji Youn Choi, Hyun Kyung Cho, Kee Young Lim, Hyung Jae Lee.

Si doped GaN

p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
D.J. As, T. Simonsmeier, J. Busch, B. Schottker, M. Lubbers, J. Mimkes, D. Schikora, K. Lischka, W. Kriegseis, W. Burkhardt, B.K. Meyer.

Si doping

Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
B.J. Skromme.

Si substrate

Cubic GaN Heteroepitaxy on Thin-SiC Covered Si(001)
Yuichi Hiroyama, Masao Tamura.

Si(111)

High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
Sergey A. Nikishin, Nikolai N Faleev, Vladimir G. Antipov, Sebastien Francoeur, Luis Grave de Peralta, George A. Seryogin, Mark Holtz, Tat'yana I. Prokofyeva, George Chu, Andrei S. Zubrilov, Vyacheslav A. Elyukhin, Irina P. Nikitina, Andrei Nikolaev, Yuriy Melnik, Vladimir Dmitriev, Henryk Temkin.

Si-doping

AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties
Edwin L Piner, David M Keogh, Jeff S Flynn, Joan M Redwing.
Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
Donat Josef As, Andreas Richter, Joerg Busch, Bernd Schoettker, Martin Luebbers, Juergen Mimkes, Detlef Schikora, Klaus Lischka, Wilhelm Kriegseis, Wilhelm Burkhardt, Bruno K. Meyer.
Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
Atsuhiro Kinoshita, H. Hirayama, P. Riblet, M. Ainoya, A. Hirata, Y. Aoyagi.

SiC

Cubic GaN Heteroepitaxy on Thin-SiC Covered Si(001)
Yuichi Hiroyama, Masao Tamura.
Optical Properties of Nitride-based Structures Grown on 6H-SiC
D.V. Tsvetkov, A.S. Zubrilov, V. I. Nikolaev, V Soloviev, V.A. Dmitriev.
A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
John T Torvik , M. Leksono, J. I. Pankove, B. Van Zeghbroeck.
Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
K.J. Linthicum, T. Gehrke, D.B. Thomson, K.M. Tracy, E.P. Carlson, T.P. Smith, T.S. Zheleva, C.A. Zorman, M. Mehregany, R.F. Davis.
Temperature Effect on the Quality of AlN Thin Films
Margarita P. Thompson, Andrew R. Drews, Changhe Huang, Gregory W. Auner.

SiC substrate

GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
A.E. Nikolaev, Yu.V. Melnik, M.N. Blashenkov, N.I. Kuznetsov, I.P. Nikitina, A.S. Zubrilov, D.V. Tsvetkov, V. I. Nikolaev, V.A. Dmitriev, V.A. Soloviev.

SiC substrates

Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
M. D. Bremser, W. G. Perry, T. Zheleva, N. V. Edwards, O. H. Nam, N. Parikh, D. E. Aspnes, Robert F. Davis.

SiC SURFACE PREPARATION

Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
R. Lantier, A. Rizzi, D. Guggi, H. Luth, B. Neubauer, D. Gerthsen, S. Frabboni, G. Coli, R. Cingolani.

Silicium

Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
S. Haffouz, B. Beaumont, Pierre Gibart .

silicon

Doping of AlGaN Alloys
Chris G. Van de Walle, C. Stampfl, J. Neugebauer, M.D. McCluskey, N.M. Johnson.
Nucleation of AlN on the (7x7) Reconstructed Silicon (1 1 1) Surface
E. S. Hellman, D. N. E. Buchanan, C. H. Chen.
Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober.

silicon carbide

Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
C. D. Lee, R. M. Feenstra, O. Shigiltchoff, R. P. Devaty, W. J. Choyke.
Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober.
Comparative Growth of AlN on Singular and Off-Axis 6H and 4h-SiC by MOCVD
S. Wilson, C.S. Dickens, J. Griffin, M.G. Spencer.

silicon substrate

Effects of Susceptor Geometry on GaN Growth on Si(111) with a New MOCVD Reactor
Yungeng Gao, Daniel A. Gulino, Ryan Higgins.
Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. J. Rosner, G. Girolami, Paul T. Fini , J.P. Ibbetson, S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.

SIMS

p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
D.J. As, T. Simonsmeier, J. Busch, B. Schottker, M. Lubbers, J. Mimkes, D. Schikora, K. Lischka, W. Kriegseis, W. Burkhardt, B.K. Meyer.
Characterization of Be-Implanted GaN Annealed At High Temperatures
C. Ronning, K.J. Linthicum, E.P. Carlson, P.J. Hartlieb, D.B. Thomson, T. Gehrke, R.F. Davis.
Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
S. Strite, A. Pelzmann, T. Suski, M. Leszczynski, J. Jun, A. Rockett, Markus Kamp , K. J. Ebeling.
Direct SIMS Determination of the In_xGa_1-xN Mole Fraction
A. P. Kovarsky, Yu. L. Kretser, Yu A. Kudriavtsev, D. N. Stroganov, M. A. Yagovkina, Tilman Beierlein , S. Strite.
In-depth Analysis of the Impurities in GaN
A. P. Kovarsky, V. S. Strykanov.

SIMS transmission

Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
C. Giannini, E. Carlino, L. Tapfer, F. Höhnsdorf, J. Koch, W. Stolz.

simulation

Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
Kay Domen , Reiko Soejima, Akito Kuramata , Toshiyuki Tanahashi.

single

Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin, Z. Sitar.

single crystal substrates

GaN Homoepitaxy for Device Applications
M. Kamp, C. Kirchner, V. Schwegler, A. Pelzmann, E.J. Ebeling, M. Lesczczynski, I. Grzegory, T. Suski, S. Porowski.

single crystalline ZnGeN2

Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN₂
L.D. Zhu, P.H. Maruska, P.E. Norris, P.W. Yip, L.O. Bouthillette.

single crystals

Highly Chemical Reactive Ion Etching of Gallium Nitride
Fouad Karouta, Bart Jacobs, Ingrid Moerman, Koen Jacobs, Jan Weyher, Sylvester Porowski, Rachel Crane, Paul Hageman.

smoothening

Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)
H.P. Gillis, M.B. Christopher, K.P. Martin, D.A. Choutov.

solar-blind

High-Performance Solar-Blind AlGaN Schottky Photodiodes
Necmi Biyikli, Tolga Kartaloglu, Orhan Aytur, Ibrahim Kimukin, Ekmel Ozbay.

solar-blind detector

Solar-Blind AlGaN Heterostructure Photodiodes
J.D. Brown, Jizhong Li, P. Srinivasan, J. Matthews, J.F. Schetzina.

solid solutions

Raman study of resonance effects in Ga_1-xAl_xN solid solutions
F. Demangeot, J. Frandon, M. A. Renucci, H. Sands, D. Batchelder, S. Ruffenach-Clur, Olivier Briot, Bernard Gil.
Optical Properties of Nitride-based Structures Grown on 6H-SiC
D.V. Tsvetkov, A.S. Zubrilov, V. I. Nikolaev, V Soloviev, V.A. Dmitriev.

source

Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources
A. J. Ptak, K. S. Ziemer, L. J. Holbert, C. D. Stinespring, Thomas H Myers.

source precursors

Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors
Roland A. Fischer, Andreas Wohlfart, Anjana Devi, Wolfram Rogge.

spatial resolution

Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
S. Einfeldt, T. Bottcher, D. Hommel, H. Selke, P.L. Ryder, F. Gertram, T. Riemann, T. Riemann, D. Rudloff, J. Christen.

spatially resolved

Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
Veit Schwegler, M. Seyboth, C. Kirchner, M. Scherer, M. Kamp, P. Fischer, J. Christen, M. Zacharias.

specific heat

Thermodynamic properties of group-III nitrides and related species
I. N. Przhevalskii, S. Yu. Karpov, Yu. N. Makarov.

spectroscopic ellipsometry

Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
Joachim Wagner, Arun Ramakrishnan, Harald Obloh, Michael Kunzer, Klaus Köhler, B. Johs.

spectroscopy

Optical Spectroscopy of InGaN Epilayers in the Low Indium Composition Regime
Mary H. Crawford, Jung Han, Michael A. Banas, Samuel M. Myers, Gary A. Petersen, Jeffrey J. Figiel.

spontaneous polarization

Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
Annalisa Bonfiglio, Mauro Lomascolo, Giampiero Traetta, Roberto Cingolani, Aldo Di Carlo, Fabio Della Sala, Paolo Lugli, Andrei Botchkarev, Hadis Morkoc.
Spectroscopic Studies in InGaN Quantum Wells
S.F. Chichibu, T. Sota, K. Wada, S.P. DenBaars, S. Nakamura.

Sputter deposition

DLTS Characterization of Defects Introduced During Sputter Deposition of Au Schottky Contacts on n-GaN
F.D. Auret, S.A. Goodman, F.K. Koschnick, J-M. Spaeth, B. Beaumont, P. Gibart.

stability

High-temperature structural behavior of Ni/Au Contact on GaN(0001)
Chong Cook Kim, Jong Kyu Kim, Jong-Lam Lee, Jung Ho Je, Min-Su Yi, Do Young Noh, Y. Hwu, P. Ruterana.

stacking faults

Polarization and band offsets of stacking faults in AlN and GaN
J. A. Majewski, P. Vogl.

Stark effect

Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
C. Wetzel, T. Takeuchi, H. Amano, I. Akasaki.

states

Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
Hartmut P. Witte, Andre Andre, Marko Lisker, Dirk Rudloff, Juergen Christen, Alois Krost, Martin Stutzmann, F. Scholz.

STEM

Evidence from EELS of Oxygen in the Nucleation Layer of an MBE Grown III-N HEMT
Tyler J. Eustis, John Silcox, Michael J Murphy, William J Schaff.

stimulated emission

Comparison Study of Structural and Optical Properties of In_xGa_1-xN/GaN Quantum Wells With Different In Compositions
Yong-Hwan Kwon, G. H. Gainer, S. Bidnyk, Y. H. Cho, J. J. Song, M. Hansen, S. P. DenBaars.
Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
T.J. Schmidt, S. Bidnyk, Yong-Hoon Cho, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars.
Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.

STM

Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
Huajie Chen, A.R. Smith, R.M. Feenstra, D.W. Greve, J.E. Northrup.

strain

Strain relaxation in GaN layers grown on porous GaN sublayers
M. Mynbaeva, A. Titkov, A. Kryzhanovski, I. Kotousova, A.S. Zubrilov, V.V. Ratnikov, V. Yu. Davydov, N.I. Kuznetsov, K. Mynbaev, D.V. Tsvetkov, S. Stepanov, A.Cherenkov, V.A. Dmitriev.
Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
Jung Han, M.H. Crawford, R.J. Shul, S.J. Hearne, E. Chason, J.J. Figiel, M. Banas.
Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
Carol Trager-Cowan, D McColl, F Sweeney, S T F Grimson, J-F Treguer, A Mohammed, P G Middleton, S K Manson-Smith, K P O'Donnell, W Van der Stricht, I Moerman, P Demeester, M F Wu, A Vantomme, D Zubia, S D Hersee.
Influence of Doping on the Lattice Dynamics GaN
A. Kaschner, H. Siegle, A. Hoffmann, C. Thomsen, U. Birkle, S. Einfeldt, D. Hommel.
On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
Christian Wetzel, Shugo Nitta, Tetsuya Takeuchi, Shigeo Yamaguchi, H. Amano, I. Akasaki.
Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
Zhonghai Yu , M.A.L. Johnson, T. Mcnulty, J.D. Brown, J.W. Cook,Jr, J.F. Schetzina.
Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
Jin Seo Im, H. Kollmer, O. Gfrorer, J. Off, F. Scholz, A. Hangleiter.
Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
J. A. Majewski, M. Städele, P. Vogl.
Free Excitons in GaN
B. Monemar, J. P. Bergman, I. A. Buyanova, W. Li, H. Amano, I. Akasaki.
Optical Investigations of AlGaN on GaN Epitaxial Films
G. Steude, T. Christmann, B.K. Meyer, A. Goeldner, A. Hoffmann, F. Bertram, J. Christen, H. Amano, I. Akasaki.
Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman Spectroscopy
Mathias M Schubert, Alexander Kasic, Tomas E Tiwald, John A Woollam, Volker Haerle, Ferdinand Scholz.
Thermal Expansion of GaN at Low Temperatures - A Comparison of Bulk and Homo- and Heteroepitaxial Layers
Verena Kirchner, Heidrun Heinke, Sven Einfeldt, Detlef Hommel, Jaroslaw Z Domagala, Michal Leszczynski.
Physical Properties of Bulk GaN Crystals Grown by HVPE
Yu.V. Melnik, K.V. Vassilevski, I.P. Nikitina, A.I. Babanin, V. Yu. Davydov, V.A. Dmitriev.

strain effect

Suppression of phase separation in InGaN due to elastic strain
S. Yu. Karpov.

strain energy

GaN Nanotubes
Seung Mi Lee, Young Hee Lee, Yong Gyoo Hwang, J. Elsner, Dirk Porezag, Thomas Frauenheim.

strain relaxation

Pinholes, Dislocations and Strain Relaxation in InGaN
B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.

stress

Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
Jung Han, M.H. Crawford, R.J. Shul, S.J. Hearne, E. Chason, J.J. Figiel, M. Banas.

stress calibration

Raman Determination of the Phonon Deformation Potentials in -GaN
F. Demangeot, J. Frandon, M. A. Renucci, Olivier Briot, Bernard Gil, Roger-Louis Aulombard.

stretched exponential function

Time-Resolved Spectroscopy of InGaN
Milan Pophristic, Frederick H Long, C. Tran, I. T. Ferguson.

structural characterization

Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN₂
L.D. Zhu, P.H. Maruska, P.E. Norris, P.W. Yip, L.O. Bouthillette.
MOVPE Growth and Structural Characterization of Al_xGa_1-xN
S. Ruffenach-Clur, Olivier Briot, Bernard Gil, Roger-Louis Aulombard, J. L. Rouviere.

structural properties

The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
N. A. Shapiro, Piotr Perlin , Christian Kisielowski, L. S. Mattos, J. W. Yang, Eicke R. Weber .
Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
R. Lantier, A. Rizzi, D. Guggi, H. Luth, B. Neubauer, D. Gerthsen, S. Frabboni, G. Coli, R. Cingolani.
Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
H. Marchand, J.P. Ibbetson, P.T. Fini, X.H. Wu, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra.
Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
C. Giannini, E. Carlino, L. Tapfer, F. Höhnsdorf, J. Koch, W. Stolz.
Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
T. Paskova, E.B. Svedberg, L.D. Madsen, R. Yakimova, I.G. Ivanov, A. Henry, B. Monemar.

structures

Optical Properties of Nitride-based Structures Grown on 6H-SiC
D.V. Tsvetkov, A.S. Zubrilov, V. I. Nikolaev, V Soloviev, V.A. Dmitriev.

sublimation

Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin, Z. Sitar.
Current status of GaN crystal growth by sublimation sandwich technique
P. G. Baranov, E. N. Mokhov, A. O. Ostroumov, M. G. Ramm, M. S. Ramm, V. V. Ratnikov, A. D. Roenkov, Yu. A. Vodakov, A. A. Wolfson, G. V. Saparin, S. Yu. Karpov, D. V. Zimina, Yu. N. Makarov, Holger Juergensen.
The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation
B. Liu, J.H. Edgar, Z. Gu, D. Zhuang, B. Raghothamachar, M. Dudley, A. Sarua, Martin Kuball , H. M. Meyer III.
Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates
Lianghong Liu, B. Liu, Y. Shi, J.H. Edgar.

sublimation method

New Technique for Sublimation Growth of AlN Single Crystals
Y. Shi, B. Liu, Lianghong Liu, J.H. Edgar, E.A. Payzant, J. M. Hayes, Martin Kuball .

substrate

Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
L.J. Schowalter, Y. Shusterman, R. Wang, I. Bhat, G. Arunmozhi, G.A. Slack.
Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
H. Teisseyre, G. Nowak, M. Leszczynski, I. Grzegory, M. Bockowski, S. Krukowski, S. Porowski, M. Mayer, A. Pelzmann, Markus Kamp , K. J. Ebeling, G. Karczewski.
Preparation of Sapphire for High Quality III-Nitride Growth
J. Cui, A. Sun, M. Reshichkov, F. Yun, A. Baski, H. Morkoç.

substrates

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
E. Frayssinet, B. Beaumont, J. P. Faurie, Pierre GIBART, Zs. Makkai, B. Pécz, P. Lefebvre, P. Valvin.
Growth of Oriented Thick Films of Gallium Nitride From the Melt
Jeffrey S. Dyck, Kathleen Kash, Michael T. Grossner, Cliff C. Hayman, Alberto Argoitia, Nan Yang, Moon-Hi Hong, Martin E. Kordesch.
TEM Study of Bulk AlN Growth by Physical Vapor Transport
Wendy Lynn Sarney, Lourdes Salamanca-Riba, Tim Hossain, P. Zhou, H N Jayatirtha, Hyoung Ho Kang, R. D. Vispute, Michael Spencer, Ken Jones.
Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.
The Morphology and Cathodoluminescence of GaN Thin Films
C. Trager-Cowan, P. G. Middleton, K. P. O'Donnell.
High Resistivity Al_xGa_1-xN Layers Grown by MOCVD
A. Y. Polyakov, M. Shin, D. W. Greve, M. Skowronski, R. G. Wilson.
ScAlMgO₄: an Oxide Substrate for GaN Epitaxy

E. S. Hellman, C. D. Brandle, L. F. Schneemeyer, D. Wiesmann, I. Brener, T. Siegrist, G. W. Berkstresser, D. N. E. Buchanan, E. H. Hartford.
High Quality Hydrothermal ZnO Crystals
M. Suscavage, M. Harris, D. Bliss, P. Yip, S-Q. Wang, D. Schwall, L. Bouthillette, J. Bailey, M. Callahan, D.C. Look, D.C. Reynolds, R.L. Jones, C.W. Litton.
Nucleation of AlN on the (7x7) Reconstructed Silicon (1 1 1) Surface
E. S. Hellman, D. N. E. Buchanan, C. H. Chen.
Properties of GaN epilayers grown on misoriented sapphire substrates
Carol Trager-Cowan , S. McArthur, P. G. Middleton, K. P. O'Donnell, D. Zubia, S. D. Hersee.
Recent Results in the Crystal Growth of GaN at High N₂ Pressure
I. Grzegory, M. Bockowski, B. Lucznik, S. Krukowski, M. Wroblewski, S. Porowski.
Growth of Ga-face and N-face GaN films using ZnO Substrates
E. S. Hellman, D. N. E. Buchanan, D. Wiesmann, I. Brener.
New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type A^IIIB^V on sapphire substrates
M.J. Kotelyanskii, I.M. Kotelyanskii, V.B. Kravchenko.
Physical Properties of Bulk GaN Crystals Grown by HVPE
Yu.V. Melnik, K.V. Vassilevski, I.P. Nikitina, A.I. Babanin, V. Yu. Davydov, V.A. Dmitriev.
Modeling GaN Growth by Plasma Assisted MBE in the Presence of Low Mg Flux
Nathan Sipe, Rama Venkat.
Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
M. Callahan, M. Harris, M. Suscavage, D. Bliss, J. Bailey.

sulphide solution

Photoluminescence of FS-GaN Treated in Alcoholic Sulfide Solutions
Y.V. Zhilyaev, M.E. Kompan, E.V. Konenkova, S.D. Raevskii.

superlattice

Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
Monica Hansen, Amber C. Abare, Peter Kozodoy, Thomas M. Katona, Michael D. Craven, Jim S. Speck, Umesh K. Mishra, Larry A. Coldren, Steven P. DenBaars.

superlattices

Characteristics of Ti/Pt/Au Ohmic Contacts on p-Type GaN/A1xGA1-xN Superlattices
Ling Zhou, Farid Khan, A. T. Ping, A. Osinski, I. Adesida.

surface

Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE
E.C. Piquette, P.M. Bridger, R.A. Beach, T.C. McGill.
Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
J. L. Rouvière, M. Arlery, R. Niebuhr, K. H. Bachem, Olivier Briot.
XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces
R.A. Beach, E.C. Piquette, T.C. McGill.
Photoluminescence of FS-GaN Treated in Alcoholic Sulfide Solutions
Y.V. Zhilyaev, M.E. Kompan, E.V. Konenkova, S.D. Raevskii.
Physical Properties of Bulk GaN Crystals Grown by HVPE
Yu.V. Melnik, K.V. Vassilevski, I.P. Nikitina, A.I. Babanin, V. Yu. Davydov, V.A. Dmitriev.

surface core level shift

Core-Level Photoemission From Stoichiometric GaN(0001)-1x1
S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, M. Oshima.

surface damage

Schottky Diodes on MOCVD Grown AlGaN Films.
A. Y. Polyakov, N.B. Smirnov, A.V. Govorkov, D. W. Greve, M. Skowronski, M. Shin, Joan M. Redwing.

Surface etching

Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
Z.Y. Xie, C.H. Wei, L.Y. Li, J.H. Edgar, J. Chaudhuri, C. Ignatiev.
Preparation of stoichiometric GaN(0001)-1x1: an XPS study
S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, H.W. Yeom, H. Miki, M. Oshima.

surface morphology

New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
Hyun Cho, J. Hong, T. Maeda, S.M. Donovan, J. Devin MacKenzie , Cammy R. Abernathy , S.J. Pearton, R. J. Shul, J. Han.
Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
M. Godlewski, E. M. Goldys, M. R. Philips, J. P. Bergman, B. Monemar, R. Langer, A. Barski.
Surface Morphology of GaN: Flat Versus Vicinal Surfaces
Maohai Xie, Sean M. Seutter, Lianxi Zheng, Sauha Cheung, YeeFai Ng, Huasheng Wu, Shuk Yin Tong.
Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire
M. Sumiya, T. Ohnishi, M. Tanaka, A. Ohtomo, M. Kawasaki, M. Yoshimoto, K. Koinuma, K. Ohtsuka, S. Fuke.

surface recombination

Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
B.J. Skromme.

surface reconstruction

Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
O. Zsebök, J.V. Thordson, T.G. Andersson.

surface segregation

Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
Huajie Chen, R. M. Feenstra, J. Northrup, Jörg Neugebauer, D. W. Greve.

surface structure

Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
H. Marchand, J.P. Ibbetson, P.T. Fini, X.H. Wu, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra.
Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
Hugues Marchand , J.P. Ibbetson, Paul T. Fini , Peter Kozodoy , S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.
Core-Level Photoemission From Stoichiometric GaN(0001)-1x1
S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, M. Oshima.

surface structures

Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
T. Zywietz, Jörg Neugebauer, M. Scheffler, J. Northrup, Chris G. Van de Walle .

surfaces

GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium
Michael E. Bartram, J. Randall Creighton.

surfactants

Surface Activity of Magnesium During GaN Molecular Beam Epitaxial Growth
Vidhya Ramachandran, Randall M Feenstra, John E. Northrup, David W. Greve.
MBE Growth Of GaN Films In Presence Of Surfactants: The Effect Of Mg And Si
Guido Mula, Bruno Daudin, Christoph Adelmann, Philippe Peyla.
Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
T. Zywietz, Jörg Neugebauer, M. Scheffler, J. Northrup, Chris G. Van de Walle .

susceptor geometry

Effects of Susceptor Geometry on GaN Growth on Si(111) with a New MOCVD Reactor
Yungeng Gao, Daniel A. Gulino, Ryan Higgins.

switching

Processing And Device Performance Of GaN Power Rectifiers
A.P. Zhang, G.T. Dang, X.A. Cao, H. Cho, F. Ren, J. Han, J.-I. Chyi, C.-M. Lee, T.-E. Nee, G.-C. Chi, C.-C. Chuo, S.N.G. Chu, R.G. Wilson, S. J. Pearton.

symmetry

Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
T.A. Kennedy, E.R. Glaser, W.E. Carlos, P.P. Ruden, Shuji Nakamura.

The keywords used in this indexing have been supplied by the authors.