MIJ-NSR Keyword Index, Keywords starting with R

r-plane sapphire

• P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire
  R. Armitage, Qing Yang, Eicke R. Weber .

radiation

• Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN
  I. Usov, N. Parikh, D.B. Thomson, Robert F. Davis.

Radiation Effects

• Effects of Oxygen Ion Implantation in Gallium Nitride
  W. Jiang, W.J. Weber, S. Thevuthasan, G.J. Exarhos, B.J. Bozlee.

radiation.

• Luminescence Spectra Of Superbright Blue and Green InGaN/AlGaN/GaN Light-Emitting Diodes
  K. G. Zolina, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, Shuji Nakamura .

radiative lifetime

• Radiative Lifetime of Excitons in GaInN/GaN Quantum Wells
  Jin Seo Im, Volker Härle, Ferdinand Scholz, Andreas Hangleiter .

radiative recombination

• The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
  Alexey V. Dmitriev, Alexander L. Oruzheinikov.

• A Perspective on the GaN Injection Laser
  J. I. Pankove.

Raman

• Raman characterization of the optical phonons in Al_xGa_1-xN layers grown by MBE and MOCVD
  A. Cros, H. Angerer, R. Handschuh, O. Ambacher, M. Stutzmann.

• Phonon Dynamics and Lifetimes of AlN and GaN Crystallites
  Leah Bergman, Dimitri Alexson, Robert J. Nemanich, Mitra Dutta, Michael A. Stroscio, Cengiz Balkas, Robert F. Davis.

• Raman Determination of the Phonon Deformation Potentials in -GaN
  F. Demangeot, J. Frandon, M. A. Renucci, Olivier Briot, Bernard Gil, Roger-Louis Aulombard.

Raman mapping

• Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and Their Optical Characterization by Micro-Photoluminescence/Raman Mapping
  Martin Kuball, M. Benyoucef, F. H. Morrissey, C. T. Foxon.

Raman scattering

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions
  F. Demangeot, J. Frandon, M. A. Renucci, H. Sands, D. Batchelder, S. Ruffenach-Clur, Olivier Briot, Bernard Gil.

• Thermal Stability of GaN Investigated by Raman Scattering
  M. Kuball, F. Demangeot, J. Frandon, M.A. Renucci, N. Grandjean, O. Briot.

• Physical Properties of Bulk GaN Crystals Grown by HVPE
  Yu.V. Melnik, K.V. Vassilevski, I.P. Nikitina, A.I. Babanin, V. Yu. Davydov, V.A. Dmitriev.

RAMAN SPECTROSCOPY

• Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
  Lawrence Robins, A.J. Paul, C.A. Parker, J. C. Roberts, S. M. Bedair, E. L. Piner , N. A. El-Masry.

• Influence of Doping on the Lattice Dynamics GaN
  A. Kaschner, H. Siegle, A. Hoffmann, C. Thomsen, U. Birkle, S. Einfeldt, D. Hommel.

Raman spectroscopy,AlGaN,solid solutions,disorder effects,coupling of oscillators.

• Raman study of Ga_1-xAl_xN solid solutions
  F. Demangeot, J. Groenen, J. Frandon, M. A. Renucci, Olivier Briot, S. Ruffenach-Clur, Roger-Louis Aulombard.

rapid thermal processing

• Rapid Thermal Processing of Implanted GaN Up To 1500°C
  X.A. Cao, S.J. Pearton, R.K. Singh, C.R. Abernathy, J. Han, R.J. Shul, D.J. Rieger, J.C. Zolper, R.G. Wilson, M. Fu, J.A. Sekhar, H.J. Guo, S.J. Pennycook.

rare earth

• Photoluminescence and Cathodoluminescence of GaN Doped With Pr
  Henryk J. Lozykowski, Wojciech Jadwisienczak, I. Brown.

• Visible Luminescent Activation of Amorphous AlN:Eu Thin-Film Phosphors with Oxygen
  Meghan L. Caldwell, P. G. Van Patten, Martin E. Kordesch, Hugh H Richardson.

Rare Earth doping

• Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE
  R.H. Birkhahn, R. Hudgins, D.S. Lee, B.K. Lee, A.J. Steckl, A. Saleh, R.G. Wilson, J.M. Zavada.

rare-earth

• Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium-Doped GaN
  M. Garter, R. Birkhahn, A.J. Steckl, J. Scofield.

RBS

• RBS Lattice Site Location and Damage Recovery Studies on Er Implanted GaN
  E. Alves, M.F. DaSilva, J.C. Soares, J. Bartels, R. Vianden, C.R. Abernathy, S.J. Pearton.

reactive ion etching

• Fabrication of GaN mesa structures
  K.V. Vassilevski, M.G. Rastegaeva, A.I. Babanin, I.P. Nikitina, V.A. Dmitriev.

• Highly Chemical Reactive Ion Etching of Gallium Nitride
  Fouad Karouta, Bart Jacobs, Ingrid Moerman, Koen Jacobs, Jan Weyher, Sylvester Porowski, Rachel Crane, Paul Hageman.

• Physical Properties of Bulk GaN Crystals Grown by HVPE
  Yu.V. Melnik, K.V. Vassilevski, I.P. Nikitina, A.I. Babanin, V. Yu. Davydov, V.A. Dmitriev.

real-space transfer

• Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?
  Jianyu Deng, Remis Gaska, Michael S. Shur, Asif Khan, J. W. Yang.

recoiled ions.

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  E. Kim, I. Berichev, A. Bensaoula, A. Schultz, K. Waters, W. Zagozdzon-Wosik.

recombination

• Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
  T.A. Kennedy, E.R. Glaser, W.E. Carlos, P.P. Ruden, Shuji Nakamura.

• Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  B. Monemar, J.P. Bergman, J. Dalfors, G. Pozina, B.E. Sernelius, P.O. Holtz, H. Amano, I. Akasaki.

• The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
  N. A. Shapiro, Piotr Perlin , Christian Kisielowski, L. S. Mattos, J. W. Yang, Eicke R. Weber .

• Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
  Alexander Y. Polyakov, Nikolai B. Smirnov, Anatoliy V. Govorkov, Alexander S. Usikov, Natalie M. Shmidt, Boris V. Pushnyi, Denis V. Tsvetkov, Sergey I. Stepanov, Vladimir A. Dmitriev, Mikhail G. Mil'vidskii, Vladimir F. Pavlov.

reconstruction

• Nucleation of AlN on the (7x7) Reconstructed Silicon (1 1 1) Surface
  E. S. Hellman, D. N. E. Buchanan, C. H. Chen.

• Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
  R. M. Feenstra, J. E. Northrup, Jörg Neugebauer.

reconstructions

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  A. R. Smith, V. Ramachandran, R. M. Feenstra, D. W. Greve, A. Ptak, T. Myers, W. Sarney, L. Salamanca-Riba, M. Shin, M. Skowronski.

rectifiers

• Processing And Device Performance Of GaN Power Rectifiers
  A.P. Zhang, G.T. Dang, X.A. Cao, H. Cho, F. Ren, J. Han, J.-I. Chyi, C.-M. Lee, T.-E. Nee, G.-C. Chi, C.-C. Chuo, S.N.G. Chu, R.G. Wilson, S. J. Pearton.

Red

• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
  S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, T. Mukai.

red emission

• Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
  E.M. Goldys, M. Godlewski, T. Paskova, G. Pozina, B. Monemar.

redistribution

• Rapid Thermal Processing of Implanted GaN Up To 1500°C
  X.A. Cao, S.J. Pearton, R.K. Singh, C.R. Abernathy, J. Han, R.J. Shul, D.J. Rieger, J.C. Zolper, R.G. Wilson, M. Fu, J.A. Sekhar, H.J. Guo, S.J. Pennycook.

reflectance

• Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
  B.J. Skromme.

• Free Excitons in GaN
  B. Monemar, J. P. Bergman, I. A. Buyanova, W. Li, H. Amano, I. Akasaki.

reflection high energy electron diffraction

• Growth of InN by MBE
  W.-L. Chen, R. L. Gunshor, Jung Han, K. Higashimine, N. Otsuka.

reflectivity

• AlGaN-Based Bragg Reflectors
  O. Ambacher, M. Arzberger, D. Brunner, H. Angerer, F. Freudenberg, N. Esser, T. Wethkamp, K. Wilmers, W. Richter, M. Stutzmann.

• Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
  Michael Wraback, H. Shen, C. J. Eiting, J. C. Carrano, R. D. Dupuis.

refractive index

• AlGaN-Based Bragg Reflectors
  O. Ambacher, M. Arzberger, D. Brunner, H. Angerer, F. Freudenberg, N. Esser, T. Wethkamp, K. Wilmers, W. Richter, M. Stutzmann.

• Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys
  J.F. Muth, J.D. Brown, M.A.L. Johnson, Zhonghai Yu, R.M. Kolbas, J.W. Cook, Jr., J.F. Schetzina.

Remote Plasma-MOCVD

• GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry
  M. Losurdo, P. Capezzuto, G. Bruno.

residual donor

• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
  W.M. Chen, I.A. Buyanova, Mt. Wagner, B. Monemar, J.L. Lindstrom, H. Amano, I. Akasaki, I. Akasaki.

• Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
  F. K. Koschnick, K. Michael, J.-M. Spaeth, B. Beaumont, Pierre Gibart .

residual hydrogen

• Properties and Effects of Hydrogen in GaN
  Stephen J. Pearton, Hyun Cho, Fan Ren, J. -I. Chyi, Jung Han, R. G. Wilson.

Residual stress

• Thermal Residual Stress Modeling in AlN and GaN Multilayer Samples
  Kai Wang, Robert R. Reeber.

resistance contacts

• Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment
  Mi-Ran Park, Wayne A Anderson, Seong-Ju Park.

resonance

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions
  F. Demangeot, J. Frandon, M. A. Renucci, H. Sands, D. Batchelder, S. Ruffenach-Clur, Olivier Briot, Bernard Gil.

resonant-cavity-enhanced

• High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes
  Necmi Biyikli, Tolga Kartaloglu, Orhan Aytur, Ibrahim Kimukin, Ekmel Ozbay.

responsivity

• Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
  Subash Krishnankutty, Wei Yang, Thomas Nohava, P. Paul Ruden.

RF

• Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE
  E.C. Piquette, P.M. Bridger, R.A. Beach, T.C. McGill.

rf plasma MBE

• An Investigation of Long and Short Time-Constant Persistent Photoconductivity in Undoped GaN Grown by RF-Plasma Assisted Molecular Beam Epitaxy
  A. J. Ptak, V. A. Stoica, L. J. Holbert, M. Moldovan, Thomas H. Myers.

rf-plasma

• Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire
  A.J. Ptak, K.S. Ziemer, M.R. Millecchia, C.D. Stinespring, T.H. Myers.

RHEED

• Temperature Effect on the Quality of AlN Thin Films
  Margarita P. Thompson, Andrew R. Drews, Changhe Huang, Gregory W. Auner.

• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
  Nicolas Grandjean, Jean Massies, Mathieu Leroux, Marguerite Laugt, Pierre Lefebvre, Bernard Gil, Jacques Allegre, Pierre Bigenwald.

• Growth Rate Reduction of GaN Due to Ga Surface Accumulation
  Devin Crawford, Ruediger Held, A. M. Johnston, A. M. Dabiran, Philip I. Cohen .

• Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy
  Igor Aksenov, Yoshinobu Nakada, Hajime Okumura.

• Growth and Doping of AlGaN Alloys by ECR-assisted MBE
  D. Korakakis, H.M. Ng, M. Misra, W. Grieshaber, T.D. Moustakas.

RIE polishing

• Highly Chemical Reactive Ion Etching of Gallium Nitride
  Fouad Karouta, Bart Jacobs, Ingrid Moerman, Koen Jacobs, Jan Weyher, Sylvester Porowski, Rachel Crane, Paul Hageman.

room temperature

• Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers
  Masayoshi Koike, S. Yamasaki, Yuta Tezen, S. Nagai, S. Iwayama, A. Kojima.

Rutherford backscattering

• Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
  L.J. Schowalter, Y. Shusterman, R. Wang, I. Bhat, G. Arunmozhi, G.A. Slack.

  The keywords used in this indexing have been supplied by the authors.

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  Index last updated Tuesday, January 18, 2005 7:48:20 PM.
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