MIJ-NSR Keyword Index, Keywords starting with Q

QD

• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
  Chang-Hee Hong, Ki Soo Kim, Won-Hee Lee, Chi Sun Kim, Ok Hwan Cha, Gye Mo Yang, Eun-Kyung Suh, Kee Young Lim, Hyung Jae Lee, Hyung Koun Cho, Jeong Yong Lee, Jae Myung Seo.

quamtum-dots

• Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant
  H. Hirayama, Y. Aoyagi, S. Tanaka.

quantum confinement.

• The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
  N. A. Shapiro, Piotr Perlin , Christian Kisielowski, L. S. Mattos, J. W. Yang, Eicke R. Weber .

quantum dot

• Theory of the Gain Characteristics of InGaN/AlGaN QD Lasers
  A.D. Andreev, E.P. O'Reilly.

quantum dots.

• Evidence of 2D-3D transition during the first stages of GaN growth on AlN
  F. Widmann, B. Daudin, G. Feuillet, Y. Samson, M. Arlery, J. L. Rouviere.

quantum well

• Optical Gain Spectra in GaN/InGaN Quantum Wells with the Compositional Fluctuations
  Takeshi Uenoyama.

• Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
  M.D. McCluskey, L.T. Romano, B.S. Krusor, D. Hofstetter, D.P. Bour, M. Kneissl, N.M. Johnson, T. Suski, J. Jun.

• Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  B. Monemar, J.P. Bergman, J. Dalfors, G. Pozina, B.E. Sernelius, P.O. Holtz, H. Amano, I. Akasaki.

• Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
  C. Wetzel, T. Takeuchi, H. Amano, I. Akasaki.

• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  A. Sohmer, J. Off, H. Bolay, V. Härle, V. Syganow, Jin Seo Im, V. Wagner, F. Adler, Andreas Hangleiter , A. Dörnen, Ferdinand Scholz, D. Brunner, O. Ambacher, H. Lakner.

• Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
  Jin Seo Im, H. Kollmer, O. Gfrorer, J. Off, F. Scholz, A. Hangleiter.

• Strong Piezoelectric Effects in Unstrained GaN Quantum Wells
  R. Langer, J. Simon, O. Konovalov, N.T. Pelekanos, R. Andre, A. Barski, M. Godlewski.

• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
  J. Dalfors, J. P. Bergman, P.O. Holtz, B. Monemar, H. Amano, I. Akasaki.

quantum wells

• Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
  T.J. Schmidt, S. Bidnyk, Yong-Hoon Cho, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars.

• Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
  Atsuhiro Kinoshita, H. Hirayama, P. Riblet, M. Ainoya, A. Hirata, Y. Aoyagi.

• Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
  F. Manyakhin, A. Kovalev, A. E. Yunovich.

• Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Multiple Quantum Wells
  A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. N. Kovalev, F. I. Manyakhin.

• Luminescence Spectra Of Superbright Blue and Green InGaN/AlGaN/GaN Light-Emitting Diodes
  K. G. Zolina, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, Shuji Nakamura .

• Emission at 247 nm from GaN Quantum Wells Grown by MOCVD
  Takao Someya, Katsuyuki Hoshino, Janet C. Harris, Koichi Tachibana, Satoshi Kako, Yasuhiko Arakawa.

• Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes
  Vladimir E. Kudryashov, Sergey S. Mamakin, Andrey N. Turkin, Alexander E. Yunovich, Alexei N. Kovalev, Fedor I. Manyakhin.

• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. Kovalev, F. Manyakhin.

• Radiative Lifetime of Excitons in GaInN/GaN Quantum Wells
  Jin Seo Im, Volker Härle, Ferdinand Scholz, Andreas Hangleiter .

• Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
  J. Allègre, P. Lefebvre, S. Juillaguet, W. Knap, J. Camassel, Q. Chen, M. A. Khan.

• The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
  N. A. Shapiro, Piotr Perlin , Christian Kisielowski, L. S. Mattos, J. W. Yang, Eicke R. Weber .

QW

• The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
  Alan G. Thompson , M. Schurman, Z. C. Feng, R. F. Karlicek, T. Salagaj, C. A. Tran, R. A. Stall.

QWs

• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
  Nicolas Grandjean, Jean Massies, Mathieu Leroux, Marguerite Laugt, Philippe Vennegues, Stephane Dalmasso, Pierre Ruterana, Lionel Hirsch, Serge Barriere.

  The keywords used in this indexing have been supplied by the authors.

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  Index last updated Tuesday, January 18, 2005 7:48:18 PM.
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