MIJ-NSR Keyword Index, Keywords starting with P

p-n junction

• GaN p-n Structures Fabricated by Mg Ion Implantation
  E.V. Kalinina, V.A. Solov'ev, A.S. Zubrilov, V.A. Dmitriev, A.P. Kovarsky.

p-type doping

• P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire
  R. Armitage, Qing Yang, Eicke R. Weber .

p-type GaN

• High-Quality Non-Alloyed Pt Ohmic Contacts to p-Type GaN Using Two-step Surface Treatment
  Ja-Soon Jang, Seong-Ju Park, Tae-Yeon Seong.

• Electrical Characterization of MOVPE-Grown p-Type GaN:Mg Against Annealing Temperature
  Shizuo Fujita, Mitsuru Funato, Doo-Cheol Park, Yoshifumi Ikenaga, Shigeo Fujita.

• Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire
  Giancarlo Salviati, Nicola Armani, Carlo Zanotti-Fregonara, Enos Gombia, Martin Albrecht, Horst Strunk, Markus Mayer, Markus Kamp, Andrea Gasparotto.

• Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN
  Ki Soo Kim, Chang Seok Oh, Myung Soo Han, Chi Sun Kim, Gye Mo Yang, Jeon Wook Yang, Chang-Hee Hong, Chang Joo Youn, Kee Young Lim, Hyung Jae Lee.

PAC

• Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
  K. Lorenz, R. Vianden, S.J. Pearton, Cammy R. Abernathy , J.M. Zavada.

parameter

• Optical Properties of GaNAs Grown by MBE
  G. Pozina, I. G. Ivanov, B. Monemar, J.V. Thordson, T.G. Andersson.

peak reflectance

• High Reflectance III-Nitride Bragg Reflectors Grown by Molecular Beam Epitaxy
  Hock Min Ng, Theodore D. Moustakas.

PEC etching

• Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures
  JA. Grenko, CL. Reynolds Jr, R. Schlesser, K. Bachmann, Z. Rietmeier, Robert F. Davis, Z. Sitar.

Peierls force

• Pinholes, Dislocations and Strain Relaxation in InGaN
  B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.

PEMBE

• PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
  H.Angerer, O. Ambacher, R. Dimitrov, Th. Metzger, W. Rieger, M. Stutzmann.

pendeo-epitaxy

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober.

• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
  K.J. Linthicum, T. Gehrke, D.B. Thomson, K.M. Tracy, E.P. Carlson, T.P. Smith, T.S. Zheleva, C.A. Zorman, M. Mehregany, R.F. Davis.

• Advanced PENDEOEPITAXY(TM) of GaN and Al_xGa_1-xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
  Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Edward A. Preble, Robert F. Davis.

• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
  Tsvetanka S. Zheleva, Scott A. Smith, Darren B. Thomson, Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Eric Carlson, Waeil M. Ashmawi, Robert F. Davis.

• Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
  D.B. Thomson, T. Gehrke, K.J. Linthicum, P. Rajagopal, R.F. Davis.

• Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates
  Robert F. Davis, Thomas Gehrke, Kevin J. Linthicum, Tsvetanka S. Zheleva, Pradeep Rajagopal, Christian A. Zorman, Mehran Mehregany.

• Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
  T. Gehrke, K.J. Linthicum, D.B. Thomson, P. Rajagopal, A.D. Batchelor, R.F. Davis.

persistent photoconductivity

• An Investigation of Long and Short Time-Constant Persistent Photoconductivity in Undoped GaN Grown by RF-Plasma Assisted Molecular Beam Epitaxy
  A. J. Ptak, V. A. Stoica, L. J. Holbert, M. Moldovan, Thomas H. Myers.

• Correlation Between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity In AlGaN/GaN Modulation Doped Heterostructures
  Jizhong Li, Jing Li, Jingyu Lin, Hongxing Jiang.

• Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
  Alexander Y. Polyakov, Nikolai B. Smirnov, Anatoliy V. Govorkov, Alexander S. Usikov, Natalie M. Shmidt, Boris V. Pushnyi, Denis V. Tsvetkov, Sergey I. Stepanov, Vladimir A. Dmitriev, Mikhail G. Mil'vidskii, Vladimir F. Pavlov.

PHASE SEPARATION

• Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
  Lawrence Robins, A.J. Paul, C.A. Parker, J. C. Roberts, S. M. Bedair, E. L. Piner , N. A. El-Masry.

• Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy
  Tae-Yeon Seong, In-Tae Bae, Y. Zhao, C.W. Tu.

• Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content
  AndrŽ Vantomme, Ming Fang Wu, Susan Hogg, Guido Langouche, Koen Jacobs, Ingrid Moerman, Madeleine White, Kevin O'Donnell, Leona Nistor, Jef Van Landuyt, Hugo Bender.

• Phase Separation in wurtzite In_1-x-yGa_xAl_yN
  T. Matsuoka.

• Suppression of phase separation in InGaN due to elastic strain
  S. Yu. Karpov.

phonons

• Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
  J. Sik, M. Schubert, T. Hofmann, V. Gottschalch.

• Raman characterization of the optical phonons in Al_xGa_1-xN layers grown by MBE and MOCVD
  A. Cros, H. Angerer, R. Handschuh, O. Ambacher, M. Stutzmann.

• Phonon Dynamics and Lifetimes of AlN and GaN Crystallites
  Leah Bergman, Dimitri Alexson, Robert J. Nemanich, Mitra Dutta, Michael A. Stroscio, Cengiz Balkas, Robert F. Davis.

• Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
  M. Schubert, A. Kasic, T.E. Tiwald, J. Off, B. Kuhn, Ferdinand Scholz.

phosphor

• Visible Luminescent Activation of Amorphous AlN:Eu Thin-Film Phosphors with Oxygen
  Meghan L. Caldwell, P. G. Van Patten, Martin E. Kordesch, Hugh H Richardson.

photo-assisted

• Damage-Free Photoassisted Cryogenic Dry Etching and Photoelectrochemical Wet Etching of GaN
  J.T. Hsieh, J.M. Hwang, H.L. Hwang, W.H. Hung.

Photo-assisted RIE (PA-RIE)

• Effect of Photo-Assisted RIE Damage on GaN
  Z. Mouffak, N. Medelci-Djezzar, C. Boney, A. Bensaoula, L. Trombetta.

photoconductivity

• Yellow Band and Deep levels in Undoped MOVPE GaN.
  Fernando J. Sanchez, D. Basak, M. A. Sanchez-García, E. Calleja, E. Muñoz, I. Izpura, F. Calle, J. M. G. Tijero, B. Beaumont, P. Lorenzini, P. Gibart, T.S Cheng, C. T. Foxon, J. W. Orton.

• Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
  O.P. Seifert, O. Kirfel, M. Munzel, M.T. Hirsch, J. Parisi, M. Kelly, O. Ambacher.

photoconductors

• Generation Recombination Noise in GaN Photoconductors
  M. Misra, D. Doppalapudi, A.V. Sampath, T.D. Moustakas, P.H. McDonald.

photodetectors

• Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy
  R. Hickman II, J.J. Klaassen, J.M. Van Hove, A.M. Wowchak, C. Polley, M.F. Rosamond, P.P. Chow.

photodetectors.

• Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  E. Monroy, J. A. Garrido, E. Muñoz, I. Izpura, F. J. Sánchez, M. A. Sánchez-García, E. Calleja, B. Beaumont, Pierre Gibart .

• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
  E. Monroy, F. Calle, E. Muñoz, F. Omnes, B. Beaumont, Pierre Gibart , J. A. Muñoz, F. Cusso.

photodiode array

• High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
  J. D. Brown, J. Matthews, S. Harney, J. C. Boney, J. F. Schetzina, J. D. Benson, K. V. Dang, Thomas Nohava, Wei Yang, Subash Krishnankutty.

photodiode model

• Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
  Subash Krishnankutty, Wei Yang, Thomas Nohava, P. Paul Ruden.

photodiodes

• Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
  Subash Krishnankutty, Wei Yang, Thomas Nohava, P. Paul Ruden.

photoelectrochemical

• Dry and Wet Etching for Group III-Nitrides
  I. Adesida, C. Youtsey, A. T. Ping, F. Khan, L. T. Romano, G. Bulman.

• A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaN
  Jung-Min Hwang, J. T. Hsieh, Huey-Liang Hwang, Wei-Hsu Hung.

photoelectrochemical etching of InxGa1-xN

• Photoelectrochemical Etching of In_xGa_1-xN
  Hyun Cho, S.M. Donovan, C.R. Abernathy, S.J. Pearton, F. Ren, J. Han, R.J. Shul.

photoemission

• Core-Level Photoemission From Stoichiometric GaN(0001)-1x1
  S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, M. Oshima.

• Room Temperature Ohmic contact on n-type GaN using plasma treatment
  Ho Won Jang, Jong Kyu Kim, Chang Min Jeon, Jong-Lam Lee.

• Preparation of stoichiometric GaN(0001)-1x1: an XPS study
  S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, H.W. Yeom, H. Miki, M. Oshima.

photoluminescence

• Temperature Dependence of Bound Exciton Emissions in GaN
  D.G. Chtchekine, G.D. Gilliland, Z.C. Feng, S.J. Chua, D.J. Wolford, S.E. Ralph, M.J. Schurman, I. Ferguson.

• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
  W.M. Chen, I.A. Buyanova, Mt. Wagner, B. Monemar, J.L. Lindstrom, H. Amano, I. Akasaki, I. Akasaki.

• Defect Luminescence in Heavily Mg-Doped GaN
  M.A. Reshchikov, G-C. Yi, B.W. Wessels.

• Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
  E.M. Goldys, M. Godlewski, T. Paskova, G. Pozina, B. Monemar.

• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. J. Rosner, G. Girolami, Paul T. Fini , J.P. Ibbetson, S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.

• Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
  C. Wetzel, T. Takeuchi, H. Amano, I. Akasaki.

• Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
  J. Allègre, P. Lefebvre, S. Juillaguet, W. Knap, J. Camassel, Q. Chen, M. A. Khan.

• The Effect of Al in Plasma-Assisted MBE-Grown GaN
  Otto Zsebök, Jan V Thordson, Qingxiang Zhao, Ulf Södervall, Lars Ilver, Thorvald G Andersson.

• A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence Spectroscopy
  Abigail Bell, Ian Harrison, Dimitris Korakakis, Eric C Larkins, Jonathan M Hayes, Martin Kuball.

• Emission at 247 nm from GaN Quantum Wells Grown by MOCVD
  Takao Someya, Katsuyuki Hoshino, Janet C. Harris, Koichi Tachibana, Satoshi Kako, Yasuhiko Arakawa.

• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  A. Sohmer, J. Off, H. Bolay, V. Härle, V. Syganow, Jin Seo Im, V. Wagner, F. Adler, Andreas Hangleiter , A. Dörnen, Ferdinand Scholz, D. Brunner, O. Ambacher, H. Lakner.

• Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells
  B. Monemar, P.P.Paskov, J. P. Bergman, G. Pozina, V. Darakchieva, M. Iwaya, Satoshi Kamiyama, H. Amano, I. Akasaki.

• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  J. Allègre, P. Lefebvre, J. Camassel, B. Beaumont, Pierre Gibart .

• Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells
  B. Monemar, P.P.Paskov, J. P. Bergman, G. Pozina, V. Darakchieva, M. Iwaya, Satoshi Kamiyama, H. Amano, I. Akasaki.

• Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
  B.J. Skromme.

• Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitxy
  U. Hommerich, J.T. Seo, Myo Thaik, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, R.G. Wilson, J.M. Zavada.

• Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes
  Arno Stötzler, Ralf Weissenborn, Manfred Deicher.

• Optical Properties of GaNAs Grown by MBE
  G. Pozina, I. G. Ivanov, B. Monemar, J.V. Thordson, T.G. Andersson.

• Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
  Michael C.Y. Chan, Kwok-On Tsang, E. Herbert Li, Steven P. DenBaars.

• Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
  A. N. Cartwright, Paul M. Sweeney, Thomas Prunty, David P. Bour, Michael Kneissl.

• Growth and Characterization of B_xGa_1-xN on 6H-SiC (0001) by MOVPE
  C.H. Wei, Z.Y. Xie, J.H. Edgar, K.C. Zeng, J.Y. Lin, H.X. Jiang, C. Ignatiev, J. Chaudhuri, D.N. Braski.

• Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  U. Strauss, H. Tews, H. Riechert, R. Averbeck, M. Schienle, B. Jobst, D. Volm, T. Streibl, B. K. Meyer, W. W. Rühle.

• Characterization of Be-Implanted GaN Annealed At High Temperatures
  C. Ronning, K.J. Linthicum, E.P. Carlson, P.J. Hartlieb, D.B. Thomson, T. Gehrke, R.F. Davis.

• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
  D.J. As, T. Simonsmeier, J. Busch, B. Schottker, M. Lubbers, J. Mimkes, D. Schikora, K. Lischka, W. Kriegseis, W. Burkhardt, B.K. Meyer.

• Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
  A. Pelzmann, S. Strite, A. Dommann, C. Kirchner, Markus Kamp , K. J. Ebeling, A. Nazzal.

• Optical properties of electron-irradiated GaN
  I. A. Buyanova, Mt. Wagner, W. M. Chen, L. Lindström, B. Monemar, H. Amano, I. Akasaki.

• Optical Activation Behavior of Ion Implanted Acceptor Species in GaN
  B. J.. Skromme, G. L. Martinez.

• Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
  R. Lantier, A. Rizzi, D. Guggi, H. Luth, B. Neubauer, D. Gerthsen, S. Frabboni, G. Coli, R. Cingolani.

• High Quality Hydrothermal ZnO Crystals
  M. Suscavage, M. Harris, D. Bliss, P. Yip, S-Q. Wang, D. Schwall, L. Bouthillette, J. Bailey, M. Callahan, D.C. Look, D.C. Reynolds, R.L. Jones, C.W. Litton.

• Photoluminescence Characterization of Mg Implanted GaN
  Carsten Ronning, Hans C. Hofsaess, Arno Stoetzler, Manfred Deicher, Eric P. Carlson, Philip J. Hartlieb, Thomas Gehrke, Pradeep Rajagopal, Robert F Davis.

• Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
  E. Frayssinet, B. Beaumont, J. P. Faurie, Pierre GIBART, Zs. Makkai, B. Pécz, P. Lefebvre, P. Valvin.

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober.

• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
  M. Godlewski, E. M. Goldys, M. R. Philips, J. P. Bergman, B. Monemar, R. Langer, A. Barski.

• Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
  S. Strite, A. Pelzmann, T. Suski, M. Leszczynski, J. Jun, A. Rockett, Markus Kamp , K. J. Ebeling.

PHOTOLUMINESCENCE EXCITATION

• Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
  Lawrence Robins, A.J. Paul, C.A. Parker, J. C. Roberts, S. M. Bedair, E. L. Piner , N. A. El-Masry.

photonic

• Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
  Qiang Zhao, M. Lukitsch, J. Xu, G. Auner, R. Niak, P-K. Kuo.

Photoreflectance

• Temperature Effect on the Quality of AlN Thin Films
  Margarita P. Thompson, Andrew R. Drews, Changhe Huang, Gregory W. Auner.

photoreflection

• Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
  C. Wetzel, T. Takeuchi, H. Amano, I. Akasaki.

• Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures
  Christian M Wetzel, Tetsuya Takeuchi, Hiroshi Amano, Isamu Akasaki.

photothermal deflection spectroscopy

• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  A. Sohmer, J. Off, H. Bolay, V. Härle, V. Syganow, Jin Seo Im, V. Wagner, F. Adler, Andreas Hangleiter , A. Dörnen, Ferdinand Scholz, D. Brunner, O. Ambacher, H. Lakner.

Physics-based modeling

• Physics-Based Intrinsic Model for AlGaN/GaN HEMTs
  Shangli Wu, Richard T. Webster, A.F.M. Anwar.

picosecond time-resolved PL

• Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence
  H.S. Kim, J.Y. Lin, H.X. Jiang, W.W. Chow, A. Botchkarev, H. Morkoc.

Piezoelectric

• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
  M.J. Murphy, B.E. Foutz, K. Chu, H. Wu, W. Yeo, W.J. Schaff, O. Ambacher, L.F. Eastman, T.J. Eustis, R. Dimitrov, M. Stutzmann, W. Rieger.

• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
  J. Dalfors, J. P. Bergman, P.O. Holtz, B. Monemar, H. Amano, I. Akasaki.

• Strong Piezoelectric Effects in Unstrained GaN Quantum Wells
  R. Langer, J. Simon, O. Konovalov, N.T. Pelekanos, R. Andre, A. Barski, M. Godlewski.

• Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures
  A. Michel, D. Hanser, R. F. Davis, D. Qiao, S. S. Lau, L. S. Yu, W. Sun, P. Asbeck.

piezoelectric effect

• On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  Christian Wetzel, Shugo Nitta, Tetsuya Takeuchi, Shigeo Yamaguchi, H. Amano, I. Akasaki.

piezoelectric effects

• The role of piezoelectric fields in GaN-based quantum wells
  Andreas Hangleiter , Jin Seo Im, H. Kollmer, S. Heppel, J. Off, Ferdinand Scholz.

• Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence
  H.S. Kim, J.Y. Lin, H.X. Jiang, W.W. Chow, A. Botchkarev, H. Morkoc.

piezoelectric field

• Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
  C. Wetzel, T. Takeuchi, H. Amano, I. Akasaki.

• Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
  Jin Seo Im, H. Kollmer, O. Gfrorer, J. Off, F. Scholz, A. Hangleiter.

piezoelectric polarization

• Spectroscopic Studies in InGaN Quantum Wells
  S.F. Chichibu, T. Sota, K. Wada, S.P. DenBaars, S. Nakamura.

Piezoelectricity.

• Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
  A. N. Cartwright, Paul M. Sweeney, Thomas Prunty, David P. Bour, Michael Kneissl.

pinholes

• Pinholes, Dislocations and Strain Relaxation in InGaN
  B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.

PL

• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
  Nicolas Grandjean, Jean Massies, Mathieu Leroux, Marguerite Laugt, Pierre Lefebvre, Bernard Gil, Jacques Allegre, Pierre Bigenwald.

• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
  J. Dalfors, J. P. Bergman, P.O. Holtz, B. Monemar, H. Amano, I. Akasaki.

• Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy
  S. Kim, X. Li, J.J. Coleman, R. Zhang, D.M. Hansen, T.F. Kuech, S.G. Bishop.

• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
  Nicolas Grandjean, Jean Massies, Mathieu Leroux, Marguerite Laugt, Philippe Vennegues, Stephane Dalmasso, Pierre Ruterana, Lionel Hirsch, Serge Barriere.

• MOVPE growth optimization of high quality InGaN films.
  W. Van der Stricht, I. Moerman, P. Demeester, L. Considine, E. J. Thrush, J. A. Crawley.

planetary

• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
  O. Schoen, D. Schmitz, M. Heuken, Holger Juergensen, M. D. Bremser.

Planetary Reactor

• Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
  R. A. Talalaev, E. V. Yakovlev, S. Yu. Karpov, Yu. N. Makarov, O. Schoen, M. Heuken, G. Strauch, Holger Juergensen.

plasma

• Room Temperature Ohmic contact on n-type GaN using plasma treatment
  Ho Won Jang, Jong Kyu Kim, Chang Min Jeon, Jong-Lam Lee.

• Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy
  M. Meyyappan.

Plasma damage

• Effect of Photo-Assisted RIE Damage on GaN
  Z. Mouffak, N. Medelci-Djezzar, C. Boney, A. Bensaoula, L. Trombetta.

plasma etch

• ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
  Bedwyr Humphreys, Matthew Govett.

plasma etching

• Etch Processing of III-V Nitrides
  C.R. Eddy, Jr..

plasma-assisted molecular beam epitaxy

• A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the In Incorporation Efficiency in InxGa1-x/GaN Heterostructures Grown by RF Plasma-Assisted Molecular Beam Epitaxy
  Mark L. O'Steen, F. Fedler, R. J. Hauenstein.

platelets

• Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
  M. Callahan, M. Harris, M. Suscavage, D. Bliss, J. Bailey.

PLD

• Review of polarity determination and control of GaN
  M. Sumiya, S. Fuke.

PLE

• Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy
  S. Kim, X. Li, J.J. Coleman, R. Zhang, D.M. Hansen, T.F. Kuech, S.G. Bishop.

pn

• Optical Properties of Nitride-based Structures Grown on 6H-SiC
  D.V. Tsvetkov, A.S. Zubrilov, V. I. Nikolaev, V Soloviev, V.A. Dmitriev.

point defects

• Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects
  I. Gorczyca, A. Svane, N. E. Christensen.

Poissonrsquo

• Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
  S. Stepanov, W.N.Wang, B.S.Yavich, V. Bougrov, Y.T.Rebane, Y.G.Shreter.

polariton laser

• Semiconductor microcavities: towards polariton lasers
  A. Kavokin, G. Malpuech, Bernard Gil.

polarity

• Study of Thin Films Polarity of Group III Nitrides
  K. Dovidenko, S. Oktyabrsky, J. Narayan, M. Razeghi.

• Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE
  E.C. Piquette, P.M. Bridger, R.A. Beach, T.C. McGill.

• Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
  J. L. Rouvière, M. Arlery, R. Niebuhr, K. H. Bachem, Olivier Briot.

• The Polarity of GaN: a Critical Review
  E. S. Hellman.

• Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
  Lijie Zhao, Hughes Marchand, Paul Fini, Steven Denbaars, Umesh Mishra, Jim Speck.

• Crystal Structure and Defects in Nitrogen-Deficient GaN
  S. Oktyabrsky, K. Dovidenko, A.K. Sharma, V. Joshkin, J. Narayan.

• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
  M.J. Murphy, B.E. Foutz, K. Chu, H. Wu, W. Yeo, W.J. Schaff, O. Ambacher, L.F. Eastman, T.J. Eustis, R. Dimitrov, M. Stutzmann, W. Rieger.

• Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire
  M. Sumiya, T. Ohnishi, M. Tanaka, A. Ohtomo, M. Kawasaki, M. Yoshimoto, K. Koinuma, K. Ohtsuka, S. Fuke.

• Core-Level Photoemission From Stoichiometric GaN(0001)-1x1
  S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, M. Oshima.

• Review of polarity determination and control of GaN
  M. Sumiya, S. Fuke.

polarization

• Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures
  Christian M Wetzel, Tetsuya Takeuchi, Hiroshi Amano, Isamu Akasaki.

• Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
  Annalisa Bonfiglio, Mauro Lomascolo, Giampiero Traetta, Roberto Cingolani, Aldo Di Carlo, Fabio Della Sala, Paolo Lugli, Andrei Botchkarev, Hadis Morkoc.

polynomial approximation

• Thermodynamic properties of group-III nitrides and related species
  I. N. Przhevalskii, S. Yu. Karpov, Yu. N. Makarov.

porous

• Strain relaxation in GaN layers grown on porous GaN sublayers
  M. Mynbaeva, A. Titkov, A. Kryzhanovski, I. Kotousova, A.S. Zubrilov, V.V. Ratnikov, V. Yu. Davydov, N.I. Kuznetsov, K. Mynbaev, D.V. Tsvetkov, S. Stepanov, A.Cherenkov, V.A. Dmitriev.

precursor purification

• Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy
  Michael E. Bartram.

precursor purity

• Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy
  Michael E. Bartram.

precursors

• Alternative N precursors and Mg doped GaN grown by MOVPE
  B. Beaumont, M. Vaille, P. Lorenzini, Pierre Gibart , T. Boufaden, B. el Jani.

pressure

• Recent Results in the Crystal Growth of GaN at High N₂ Pressure
  I. Grzegory, M. Bockowski, B. Lucznik, S. Krukowski, M. Wroblewski, S. Porowski.

• Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
  W. Shan, J.W. Ager III, W. Walukiewicz, E.E. Haller, M.D. McCluskey, N.M. Johnson, D.P. Bour.

• GaN Decomposition in Ammonia
  Daniel D Koleske, Alma E. Wickenden, Richard L. Henry.

• Enhanced GaN Decomposition At MOVPE Pressures
  D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, R.J. Gorman.

prism coupling

• Prism Coupling as a Non-Destructive Tool for Optical Characterization of (Al,Ga) Nitride Compounds
  El Hadj Dogheche, Brahim Belgacem, Denis Remiens, Pierre Ruterana, Franck OMNES.

property

• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
  Z. Chen, R. Zhang, J. Zhu, B. Shen, Y. Zhou, P. Chen, W. Li, Y. Shi, S. Gu, Y. D. Zheng.

proton

• Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
  S.A. Goodman, F.D. Auret, F.K. Koschnick, J-M. Spaeth, B. Beaumont, P. Gibart.

pseudomorphic strain

• Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
  S. Stepanov, W.N.Wang, B.S.Yavich, V. Bougrov, Y.T.Rebane, Y.G.Shreter.

pseudopotential

• Bandgap Variation at the Isostructural Phase Transformation of Wurtzite InN
  L. Bellaiche, K. Kunc, M. Besson.

pulsed

• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  P. Kung, A. Saxler, D. Walker, A. Rybaltowski, Xiaolong Zhang , J. Diaz, M. Razeghi.

pulsed laser deposition

• Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
  R. D. Vispute, A. Patel, K. Baynes, B. Ming, R. P. Sharma, T. Venkatesan, C. J. Scozzie, A. Lelis, T. Zheleva, K. A. Jones.

pyramids

• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
  S. Bidnyk, B.D. Little, Y.H. Cho, J. Krasinski, J.J. Song, W. Yang, S.A. McPherson.

PZT

• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
  W. P. Li, R. Zhang, J. Yin, X. H. Liu, Y. G. Zhou, B. Shen, P. Chen, Z. Z. Chen, Y. Shi, R. L. Jiang, Z. G. Liu, Y. D. Zheng, Z. C. Huang.

  The keywords used in this indexing have been supplied by the authors.

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  Index last updated Tuesday, January 18, 2005 7:48:16 PM.
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