MIJ-NSR Keyword Index, Keywords starting with O

ODENDOR

• Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
  F. K. Koschnick, K. Michael, J.-M. Spaeth, B. Beaumont, Pierre Gibart .

ODMR

• Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
  T.A. Kennedy, E.R. Glaser, W.E. Carlos, P.P. Ruden, Shuji Nakamura.

offsets

• Theoretical Study of ZnO and Related Mg_xZn_1-xO Alloy Band Structures
  Walter R.L. Lambrecht, Sukit Limpijumnong, B. Segall.

OHMIC CONTACT

• NiIn As An Ohomic Contact To p-GaN
  D.B. Ingerly, Y.A. Chang, Y. Chen.

• A Thermodynamic Approach to Ohmic Contact Formation to p-GaN
  Bo Liu, Mikko H. Ahonen, Paul H. Holloway.

• Zirconium Mediated Hydrogen Outdiffusion from p-GaN
  Eliana Kaminska, A. Piotrowska, A. Barcz, J. Jasinski, M. Zielinski, K. Golaszewska, R. F. Davis, E. Goldys, K. Tomsia.

• Fabrication of GaN mesa structures
  K.V. Vassilevski, M.G. Rastegaeva, A.I. Babanin, I.P. Nikitina, V.A. Dmitriev.

• The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride
  Pierre Ruterana, Gerard Nouet Nouet, Thomas Kehagias, Philomela Komninou, Theodoros Karakostas, Marie Antoinette di Forte Poisson, Frederik Huet.

• Behavior of W and WSi_x Contact Metallization on n- and p-Type GaN
  X.A. Cao, F. Ren, J.R. Lothian, S.J. Pearton, C.R. Abernathy, J.C. Zolper, M.W. Cole, A. Zeitouny, M. Eizenberg, R.J. Shul.

• Room Temperature Ohmic contact on n-type GaN using plasma treatment
  Ho Won Jang, Jong Kyu Kim, Chang Min Jeon, Jong-Lam Lee.

• Contact Issues for GaN Technology
  D. Qiao, L.S. Yu, S.S.Lau, G. J. Sullivan, S. Ruvimov, Z. Liliental-Weber.

• High-Quality Non-Alloyed Pt Ohmic Contacts to p-Type GaN Using Two-step Surface Treatment
  Ja-Soon Jang, Seong-Ju Park, Tae-Yeon Seong.

• Ni/Si-Based Contacts To GaN: Thermally Activated Structural Transformations Leading To Ohmic Behavior
  E. Kaminska, A. Piotrowska, J. Jasinski, J. Kozubowski, A. Barcz, K. Golaszewska, D.B. Thomson, R.F. Davis, M.D. Bremser.

OMVPE

• Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
  L.J. Schowalter, Y. Shusterman, R. Wang, I. Bhat, G. Arunmozhi, G.A. Slack.

• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
  K.J. Linthicum, T. Gehrke, D.B. Thomson, K.M. Tracy, E.P. Carlson, T.P. Smith, T.S. Zheleva, C.A. Zorman, M. Mehregany, R.F. Davis.

• MOVPE growth optimization of high quality InGaN films.
  W. Van der Stricht, I. Moerman, P. Demeester, L. Considine, E. J. Thrush, J. A. Crawley.

optical

• Optical Properties of Manganese Doped Amorphous and Crystalline Aluminum Nitride Films
  Meghan L Caldwell, Hugh H Richardson, M. E. Kordesch.

• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  Pawel Mackowiak, Wlodzimierz Nakwaski.

OPTICAL ABSORPTION

• Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
  Lawrence Robins, A.J. Paul, C.A. Parker, J. C. Roberts, S. M. Bedair, E. L. Piner , N. A. El-Masry.

Optical Anisotropy

• Properties of Epitaxial ZnO Thin Films for GaN and Related Applications
  H. Shen, M. Wraback, J. Pamulapati, S. Liang, C. Gorla, Y. Lu.

optical gain

• Optical Gain Spectra in GaN/InGaN Quantum Wells with the Compositional Fluctuations
  Takeshi Uenoyama.

• Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  Shuji Nakamura .

Optical Modulator

• Properties of Epitaxial ZnO Thin Films for GaN and Related Applications
  H. Shen, M. Wraback, J. Pamulapati, S. Liang, C. Gorla, Y. Lu.

optical properties

• Electronic Properties of Ga(In)NAs Alloys
  I. A. Buyanova, W. M. Chen, B. Monemar.

• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals
  A. R. A. Zauner, M. A. C. Devillers, P. R. Hageman, P. K. Larsen, S. Porowski.

optical pumping

• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
  S. Bidnyk, B.D. Little, Y.H. Cho, J. Krasinski, J.J. Song, W. Yang, S.A. McPherson.

Optical Quenching

• Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
  O.P. Seifert, O. Kirfel, M. Munzel, M.T. Hirsch, J. Parisi, M. Kelly, O. Ambacher.

optical spectroscopy

• Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
  B.J. Skromme.

optically-detected-magnetic-resonance

• Spectroscopy of Proton Implanted GaN
  M.G. Weinstein, M. Stavola, C.Y. Song, C. Bozdog, H. Przbylinski, G.D. Watkins, S.J. Pearton, R.G. Wilson.

Optoelectronics

• GaN based LED's with different recombination zones
  M. Schauler, C. Kirchner, M. Mayer, A. Pelzmann, F. Eberhard, Markus Kamp , P. Unger, K. J. Ebeling.

ordering

• Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy
  Tae-Yeon Seong, In-Tae Bae, Y. Zhao, C.W. Tu.

OSC

• Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
  Markus Kamp , M. Mayer, A. Pelzmann, K. J. Ebeling.

overgrowth

• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  B. Beaumont, M. Vaille, G. Nataf, A. Bouillé, J.-C. Guillaume, P. Vénnègues, S. Haffouz, Pierre Gibart .

overgrowth epitaxy

• TEM Study of Defects in Laterally Overgrown GaN Layers
  Z. Liliental-Weber, M. Benamara, W. Swider, J. Washburn, J. Park, P.A. Grudowski, C.J. Eiting, R.D. Dupuis.

oxidation

• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
  P. Chen, Rong Zhang, X. F. Xu, Pen Chen, Y. G. Zhou, S. Y. Xie, Y. Shi, B. Shen, S. L. Gu, Z. C. Huang, J. Hu, Y. D. Zheng.

oxygen

• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
  W.M. Chen, I.A. Buyanova, Mt. Wagner, B. Monemar, J.L. Lindstrom, H. Amano, I. Akasaki, I. Akasaki.

• Doping of AlGaN Alloys
  Chris G. Van de Walle, C. Stampfl, J. Neugebauer, M.D. McCluskey, N.M. Johnson.

• Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy
  R. Y. Korotkov, B. W. Wessels.

• XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces
  R.A. Beach, E.C. Piquette, T.C. McGill.

  The keywords used in this indexing have been supplied by the authors.

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  Keywords starting with 0 | 2 | 3 | 6 | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z |

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  Index last updated Tuesday, January 18, 2005 7:48:14 PM.
  © 2005 The Materials Research Society