MIJ-NSR Keyword Index, Keywords starting with N

N

• Room Temperature Ohmic contact on n-type GaN using plasma treatment
  Ho Won Jang, Jong Kyu Kim, Chang Min Jeon, Jong-Lam Lee.

n-GaN

• Preparation of stoichiometric GaN(0001)-1x1: an XPS study
  S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, H.W. Yeom, H. Miki, M. Oshima.

• Zirconium Mediated Hydrogen Outdiffusion from p-GaN
  Eliana Kaminska, A. Piotrowska, A. Barcz, J. Jasinski, M. Zielinski, K. Golaszewska, R. F. Davis, E. Goldys, K. Tomsia.

• Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy
  Zhaoqiang Fang, David C Look, Wook Kim, Hadis Morkoc.

• Core-Level Photoemission From Stoichiometric GaN(0001)-1x1
  S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, M. Oshima.

n-type doping

• Study of GaN films grown by metalorganic chemical vapour deposition
  W. Van der Stricht, I. Moerman, P. Demeester, J. A. Crawley, E. J. Thrush.

n-type GaN

• Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
  M. Schubert, A. Kasic, T.E. Tiwald, J. Off, B. Kuhn, Ferdinand Scholz.

• Room Temperature Ohmic contact on n-type GaN using plasma treatment
  Ho Won Jang, Jong Kyu Kim, Chang Min Jeon, Jong-Lam Lee.

nanotubes

• GaN Nanotubes
  Seung Mi Lee, Young Hee Lee, Yong Gyoo Hwang, J. Elsner, Dirk Porezag, Thomas Frauenheim.

NAOH

• Photoelectrochemical Etching of In_xGa_1-xN
  Hyun Cho, S.M. Donovan, C.R. Abernathy, S.J. Pearton, F. Ren, J. Han, R.J. Shul.

NaOH etching

• Surface Conversion Effects in Plasma-Damaged p-GaN
  X.A. Cao, Stephen J Pearton, G.T. Dang, A.P. Zhang, F. Ren, R.J. Shul, L. Zhang, R. Hickman, J.M. Van Hove.

native point defects

• Simulations of Defect-Interface Interactions in GaN
  James Chisholm, Paul D Bristowe.

NBE

• Electron Beam Bombardment Induced Decrease of Cathodoluminescence Intensity from GaN Not Caused by Absorption in Buildup of Carbon Contamination
  Eva M. Campo , G. S. Cargill III, Milan Pophristic, Ian Ferguson.

negative differential conductance

• Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?
  Jianyu Deng, Remis Gaska, Michael S. Shur, Asif Khan, J. W. Yang.

new plasma chemistry

• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
  Hyun Cho, J. Hong, T. Maeda, S.M. Donovan, J. Devin MacKenzie , Cammy R. Abernathy , S.J. Pearton, R. J. Shul, J. Han.

NIIN

• NiIn As An Ohomic Contact To p-GaN
  D.B. Ingerly, Y.A. Chang, Y. Chen.

nitridation

• Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources
  A. J. Ptak, K. S. Ziemer, L. J. Holbert, C. D. Stinespring, Thomas H Myers.

• GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry
  M. Losurdo, P. Capezzuto, G. Bruno.

nitridation of GaAs

• Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy
  Igor Aksenov, Yoshinobu Nakada, Hajime Okumura.

nitridation of sapphire

• Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire
  A.J. Ptak, K.S. Ziemer, M.R. Millecchia, C.D. Stinespring, T.H. Myers.

nitride lasers

• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  Pawel Mackowiak, Wlodzimierz Nakwaski.

NITRIDE MBE

• Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
  R. Lantier, A. Rizzi, D. Guggi, H. Luth, B. Neubauer, D. Gerthsen, S. Frabboni, G. Coli, R. Cingolani.

nitride semiconductors

• Material Properties of GaN in the Context of Electronic Devices
  H. Morkoc, R. Cingolani, W. Lambrecht, B. Gil, H-X. Jiang, J. Lin, D. Pavlidis, K. Shenai.

nitrides and luminescence.

• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. Kovalev, F. Manyakhin.

Nitrogen

• Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via MOVPE
  Kazuyuki Tadatomo, Yoichiro Ohuchi, Hiroaki Okagawa, Hirotaka Itoh, Hideto Miyake, Kazumasa Hiramatsu.

• Enhanced GaN Decomposition At MOVPE Pressures
  D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, R.J. Gorman.

• Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
  S. Krukowski.

nitrogen incorporation

• MBE Growth of Nitride-Arsenide Materials for Long Wavelength Optoelectronics
  Sylvia G. Spruytte, Christopher W. Coldren, Ann F. Marshall, Michael C. Larson, James S. Harris.

nitrogen metastables

• Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire
  A.J. Ptak, K.S. Ziemer, M.R. Millecchia, C.D. Stinespring, T.H. Myers.

Nitrogen-deficient GaN

• Crystal Structure and Defects in Nitrogen-Deficient GaN
  S. Oktyabrsky, K. Dovidenko, A.K. Sharma, V. Joshkin, J. Narayan.

noise

• Generation Recombination Noise in GaN Photoconductors
  M. Misra, D. Doppalapudi, A.V. Sampath, T.D. Moustakas, P.H. McDonald.

noise power density

• Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy
  R. Hickman II, J.J. Klaassen, J.M. Van Hove, A.M. Wowchak, C. Polley, M.F. Rosamond, P.P. Chow.

non-polar

• P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire
  R. Armitage, Qing Yang, Eicke R. Weber .

Non-stationary Transport

• Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
  Shean-Yih Chiu, A.F.M. Anwar, Shangli Wu.

nonlinear optics

• Electronic Structure and Optical Properties of ZnGeN₂
  Sukit Limpijumnong, Sergey N. Rashkeev, Walter R.L. Lambrecht.

nonlinear properties

• Optical nonlinearities of Gallium Nitride
  H. Haag, P. Gilliot, D. Ohlmann, R. Levy, Olivier Briot, Roger-Louis Aulombard.

nucleation

• Structural Evolution of GaN During Initial Stage MOCVD Growth
  Chong Cook Kim, Jung Ho Je, Min-Su Yi.

• Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications
  Jae-Hoon Lee, Myoung-Bok Lee, Sung-Ho Hahm, Yong-Hyun Lee, Jung-Hee Lee, Young- Ho Bae, Hyun Kyung Cho.

  The keywords used in this indexing have been supplied by the authors.

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  Index last updated Tuesday, January 18, 2005 7:48:11 PM.
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