MIJ-NSR Keyword Index, Keywords starting with M

Magnesium

• p-doping of GaN by MOVPE
  S. Haffouz, B. Beaumont, M. Leroux, M. Laugt, P. Lorenzini, Pierre Gibart , L.G.Hubert-Pfalzgraf.

• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
  S. Haffouz, B. Beaumont, Pierre Gibart .

• Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy
  Michael E. Bartram.

• Doping of AlGaN Alloys
  Chris G. Van de Walle, C. Stampfl, J. Neugebauer, M.D. McCluskey, N.M. Johnson.

• Photoluminescence Characterization of Mg Implanted GaN
  Carsten Ronning, Hans C. Hofsaess, Arno Stoetzler, Manfred Deicher, Eric P. Carlson, Philip J. Hartlieb, Thomas Gehrke, Pradeep Rajagopal, Robert F Davis.

magnesium doping

• Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
  T. S. Cheng, C. T. Foxon, N. J. Jeffs, D. J. Dewsnip, L. Flannery, J. W. Orton, S. V. Novikov, B. Ya Ber, Yu A. Kudriavtsev.

magnetic fields

• Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
  B.J. Skromme.

magnetooptics

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  A. M. Witowski, M. L. Sadowski, K. Pakula, B. Suchanek, R. Stepniewski, Jacek M. Baranowski , M. Potemski, G. Martinez, P. Wyder.

management.

• The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors
  W.L. Liu, V.O. Turin, A.A. Balandin, Y.L. Chen, K.L. Wang.

mapping

• Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and Their Optical Characterization by Micro-Photoluminescence/Raman Mapping
  Martin Kuball, M. Benyoucef, F. H. Morrissey, C. T. Foxon.

mass transport

• Mass Transport, Faceting and Behavior of Dislocations in GaN
  Shugo Nitta, Takayuki Kashima, Michihiko Kariya, Yohei Yukawa, Shigeo Yamaguchi, Hiroshi Amano, Isamu Akasaki.

matrix method

• High Reflectance III-Nitride Bragg Reflectors Grown by Molecular Beam Epitaxy
  Hock Min Ng, Theodore D. Moustakas.

MBE

• The role of gaseous species in group-III nitride growth
  S. Yu. Karpov, Yu. N. Makarov, M. S. Ramm.

• A Critical Comparison Between MBE and MOVPE Growth of III-V Nitride Heterostructures for Optoelectronic Device Applications
  M.A.L. Johnson, Zhonghai Yu, J.D. Brown, F.A. Koeck, N.A. El-Masry, H.S. Kong, J.A. Edmond, J.W. Cook, Jr., J.F. Schetzina.

• Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC
  Philippe Vermaut , P. Ruterana, G. Nouet, A. Salvador, H. Morkoç.

• Characterization of Flicker Noise in GaN Based Modfets At Low Drain Bias
  W.Y. Ho, W.K. Fong, C. Surya, K.Y. Tong, W. Kim, A. Botcharev, H. Morkoc.

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  F. J. Sánchez, F. Calle, M.A. Sanchez-Garcia, E. Calleja, E. Muñoz, C. H. Molloy, D. J. Somerford, F. K. Koschnick, K. Michael, J.-M. Spaeth.

• Growth and Doping of AlGaN Alloys by ECR-assisted MBE
  D. Korakakis, H.M. Ng, M. Misra, W. Grieshaber, T.D. Moustakas.

• Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
  O. Zsebök, J.V. Thordson, T.G. Andersson.

• Evidence of 2D-3D transition during the first stages of GaN growth on AlN
  F. Widmann, B. Daudin, G. Feuillet, Y. Samson, M. Arlery, J. L. Rouviere.

• Preparation of Sapphire for High Quality III-Nitride Growth
  J. Cui, A. Sun, M. Reshichkov, F. Yun, A. Baski, H. Morkoç.

• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
  Nicolas Grandjean, Jean Massies, Mathieu Leroux, Marguerite Laugt, Philippe Vennegues, Stephane Dalmasso, Pierre Ruterana, Lionel Hirsch, Serge Barriere.

• Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
  W.K. Fong, C. F. Zhu, B. H. Leung, Charles Surya .

• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  A. N. Alexeev, B. A. Borisov, V. P. Chaly, D. M. Demidov, A. L. Dudin, D. M. Krasovitsky, Yu. V. Pogorelsky, A. P. Shkurko, I. A. Sokolov, M. V. Stepanov, A. L. Ter-Martirosyan.

• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
  Nicolas Grandjean, Jean Massies, Mathieu Leroux, Marguerite Laugt, Pierre Lefebvre, Bernard Gil, Jacques Allegre, Pierre Bigenwald.

• Studies on Carbon As Alternative p-Type Dopant for GaN
  U. Birkle, M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel, S. Strauf, P. Michler, J. Gutowski.

• Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE
  E.C. Piquette, P.M. Bridger, R.A. Beach, T.C. McGill.

• Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
  M. A. Sánchez-García, E. Calleja, E. Monroy, F. J. Sánchez, F. Calle, E. Muñoz, A.Sanz. Hervas, C. Villar, M. Aguilar.

• Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE
  P. Ruterana, Philippe Vermaut , G. Nouet, A. Salvador, H. Morkoç.

• XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces
  R.A. Beach, E.C. Piquette, T.C. McGill.

• Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE
  R.H. Birkhahn, R. Hudgins, D.S. Lee, B.K. Lee, A.J. Steckl, A. Saleh, R.G. Wilson, J.M. Zavada.

• Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
  Markus Kamp , M. Mayer, A. Pelzmann, K. J. Ebeling.

• Surface Morphology and Structure of GaN_xAs_1-x
  J.V. Thordson, O. Zsebök, U. Södervall, T.G. Andersson.

• Review of polarity determination and control of GaN
  M. Sumiya, S. Fuke.

• Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
  Zhonghai Yu, M.A.L. Johnson, J.D. Brown, N.A. El-Masry, J.F. Muth, J.W. Cook, Jr., J.F. Schetzina, K.W. Haberern, H.S. Kong, J.A. Edmond.

measurements

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  J. Kozlowski, R. Paszkiewicz, R. Korbutowicz, M. Panek, B. Paszkiewicz, M. Tlaczala.

• Electrical Measurements in GaN: Point Defects and Dislocations
  David C Look, Zhaoqiang Fang, Laura Polenta.

mechanical stability

• High Temperature Hardness of Bulk Single Crystal GaN
  Ichiro Yonenaga, Tetsuya Hoshi, Akira Usui.

mechanisms

• Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy
  T. S. Kuan, C. K. Inoki, Y. Hsu, D. L. Harris, R. Zhang, S. Gu, T. F. Kuech.

• The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
  N. A. Shapiro, Piotr Perlin , Christian Kisielowski, L. S. Mattos, J. W. Yang, Eicke R. Weber .

melt growth

• GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
  Vitaly A. Sukhoveyev, Vladimir A. Ivantsov, Irina P. Nikitina, Alexandr I. Babanin, A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, M. G. Mil'vidskii, Vladimir Dmitriev.

MESFETs

• Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs
  Maziar Farahmand, Kevin Brennan.

METAL CONTACT

• NiIn As An Ohomic Contact To p-GaN
  D.B. Ingerly, Y.A. Chang, Y. Chen.

metal contacts

• XPS study of Au/GaN and Pt/GaN contacts
  R. Sporken, C. Silien, F. Malengreau, K Grigorov, R. Caudano, F. J. Sánchez, E. Calleja, E. Muñoz, B. Beaumont, Pierre Gibart .

• Metal/GaN Contacts Studied by Electron Spectroscopies
  Jacques Dumont, Roland Caudano, Robert Sporken, Eva Monroy, Elias Munoz, Bernard Beaumont, Pierre Gibart.

metal-semiconductor contact

• Ni/Si-Based Contacts To GaN: Thermally Activated Structural Transformations Leading To Ohmic Behavior
  E. Kaminska, A. Piotrowska, J. Jasinski, J. Kozubowski, A. Barcz, K. Golaszewska, D.B. Thomson, R.F. Davis, M.D. Bremser.

Metal-semiconductor interfaces

• Metal Contacts on -GaN
  T. U. Kampen, W. Mönch.

metallorganic vapor phase epitaxy (MOVPE)

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober.

metalorganic

• Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
  B.J. Skromme.

metalorganic chemical

• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. J. Rosner, G. Girolami, Paul T. Fini , J.P. Ibbetson, S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.

metalorganic chemical vapor deposition

• Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
  H. Marchand, J.P. Ibbetson, P.T. Fini, X.H. Wu, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra.

• Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  Jong-Hee Kim, Gye Mo Yang, Sung Chul Choi, Ji Youn Choi, Hyun Kyung Cho, Kee Young Lim, Hyung Jae Lee.

metalorganic vapor phase epitaxy

• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
  R. Zhang, L. Zhang, D.M. Hansen, Marek P. Boleslawski, K.L. Chen, D.Q. Lu, B. Shen, Y.D. Zheng, T.F. Kuech.

Metastable States

• Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
  O.P. Seifert, O. Kirfel, M. Munzel, M.T. Hirsch, J. Parisi, M. Kelly, O. Ambacher.

MFS

• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
  W. P. Li, R. Zhang, J. Yin, X. H. Liu, Y. G. Zhou, B. Shen, P. Chen, Z. Z. Chen, Y. Shi, R. L. Jiang, Z. G. Liu, Y. D. Zheng, Z. C. Huang.

Mg

• Modeling GaN Growth by Plasma Assisted MBE in the Presence of Low Mg Flux
  Nathan Sipe, Rama Venkat.

Mg doping

• Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy
  Michael E. Bartram.

Mg doped GaN

• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
  D.J. As, T. Simonsmeier, J. Busch, B. Schottker, M. Lubbers, J. Mimkes, D. Schikora, K. Lischka, W. Kriegseis, W. Burkhardt, B.K. Meyer.

Mg doping

• Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
  P. de Mierry, B. Beaumont, E. Feltin, H.P.D. Schenk, Pierre GIBART, F. Jomard, S. Rushworth, L. Smith, R. Odedra.

• Mg Segregation, Difficulties of P-Doping in GaN
  Zuzanna Liliental-Weber, Mourad Benamara, W. Swider, J. Washburn, I. Grzegory, S. Porowski, R. D. Dupuis, Brian J. Eiting.

• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  F. Calle, E. Monroy, F. J. Sánchez, E. Muñoz, B. Beaumont, S. Haffouz, M. Leroux, Pierre Gibart .

Mg precursors

• Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
  P. de Mierry, B. Beaumont, E. Feltin, H.P.D. Schenk, Pierre GIBART, F. Jomard, S. Rushworth, L. Smith, R. Odedra.

MgCp2

• Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy
  Michael E. Bartram.

MgO

• Theoretical Study of ZnO and Related Mg_xZn_1-xO Alloy Band Structures
  Walter R.L. Lambrecht, Sukit Limpijumnong, B. Segall.

micro-PL

• Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy
  Kyoyeol Lee, Keunho Auh.

microcavity

• Semiconductor microcavities: towards polariton lasers
  A. Kavokin, G. Malpuech, Bernard Gil.

microdistortion dislocations

• Macro- and microstrains in MOCVD-grown GaN
  A. Usikov, V.V. Ratnikov, R. Kyutt, W. V. Lundin, B. Pushnyi, N. M. Shmidt, M.P. Scheglov.

micromachining

• Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
  Qiang Zhao, M. Lukitsch, J. Xu, G. Auner, R. Niak, P-K. Kuo.

microscopy

• Comparison of Luminescence and Physical Morphologies of GaN Epilayers
  Carol Trager-Cowan , P. G. Middleton, K. P. O'Donnell, S. Ruffenach-Clur, Olivier Briot.

• Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
  E. Frayssinet, B. Beaumont, J. P. Faurie, Pierre GIBART, Zs. Makkai, B. Pécz, P. Lefebvre, P. Valvin.

• Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  Zhonghai Yu , M.A.L. Johnson, T. Mcnulty, J.D. Brown, J.W. Cook,Jr, J.F. Schetzina.

• Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
  C. Giannini, E. Carlino, L. Tapfer, F. Höhnsdorf, J. Koch, W. Stolz.

• Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
  A. Petersson, Anders Gustafsson , L. Samuelson, Satoru Tanaka , Yoshinobu Aoyagi.

microscopy.

• Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  Hugues Marchand , J.P. Ibbetson, Paul T. Fini , Peter Kozodoy , S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.

microstructure

• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
  Z. Chen, R. Zhang, J. Zhu, B. Shen, Y. Zhou, P. Chen, W. Li, Y. Shi, S. Gu, Y. D. Zheng.

• Microstructure-based Lasing in GaN/AlGaN Separate Confinement Heterostructures
  Sergiy Bidnyk, Jack Biu Lam, Brian Dean Little, Gordon Hall Gainer, Yong-Hwan Kwon, Jin-Joo Song, Gary E. Bulman, Hua-Shuang Kong.

• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
  Tsvetanka S. Zheleva, Scott A. Smith, Darren B. Thomson, Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Eric Carlson, Waeil M. Ashmawi, Robert F. Davis.

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober.

microstructures

• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
  S. Bidnyk, B.D. Little, Y.H. Cho, J. Krasinski, J.J. Song, W. Yang, S.A. McPherson.

MIS devices

• Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
  R. D. Vispute, A. Patel, K. Baynes, B. Ming, R. P. Sharma, T. Venkatesan, C. J. Scozzie, A. Lelis, T. Zheleva, K. A. Jones.

miscibility gap

• Suppression of phase separation in InGaN due to elastic strain
  S. Yu. Karpov.

misfit

• Epitaxial Growth and Orientation of GaN on (1 0 0) -LiAlO2
  E. S. Hellman, Z. Liliental-Weber, D. N. E. Buchanan.

misorientated substrates

• HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire Substrates
  Olivier Parillaud, Volker Wagner, Hans-Jörg Bühlmann, François Lelarge, Marc Ilegems.

misorientation

• Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD
  A. R.A. Zauner, J. J. Schermer, W. J.P. van Enckevort, V. Kirilyuk, J. L. Weyher, I. Grzegory, P. R. Hageman, P. K. Larsen.

misregistry

• Advanced PENDEOEPITAXY(TM) of GaN and Al_xGa_1-xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
  Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Edward A. Preble, Robert F. Davis.

mobility

• Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
  W.K. Fong, C. F. Zhu, B. H. Leung, Charles Surya .

• Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy
  Mira Misra, Anand V Sampath, Theodore Moustakas.

• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
  M.J. Murphy, B.E. Foutz, K. Chu, H. Wu, W. Yeo, W.J. Schaff, O. Ambacher, L.F. Eastman, T.J. Eustis, R. Dimitrov, M. Stutzmann, W. Rieger.

• Monte Carlo Simulation of Hall Effect in n-Type GaN
  J.D. Albrecht, P.P. Ruden, E. Bellotti, K.F. Brennan.

• Electrical Profiles in GaN/Al₂O₃ Layers with Conductive Interface Regions
  D.C. Look, J. E. Hoelscher, J. L. Brown, G. D. Via.

MOCVD

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  Y. Park, B.j. Kim, J. W. Lee, O. H. Nam, C. Sone, H. Park, Eunsoon Oh, H. Shin, S. Chae, J. Cho, Ig-Hyeon Kim, J.S. Khim, S. Cho, T.I. Kim.

• PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
  H.Angerer, O. Ambacher, R. Dimitrov, Th. Metzger, W. Rieger, M. Stutzmann.

• Preparation of stoichiometric GaN(0001)-1x1: an XPS study
  S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, H.W. Yeom, H. Miki, M. Oshima.

• Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN₂
  L.D. Zhu, P.H. Maruska, P.E. Norris, P.W. Yip, L.O. Bouthillette.

• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
  M.P. Mack, A. Abare, M. Aizcorbe, Peter Kozodoy , S. Keller, U. K. Mishra, L. Coldren, Steven DenBaars .

• Optical Properties of Si-Doped Al_xGa_1-xN/Al_yGa_1-yN (x=0.24-0.53, y=0.11) Multi-Quantum-Well Structures
  H. Hirayama, Y. Aoyagi.

• Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  Hugues Marchand , J.P. Ibbetson, Paul T. Fini , Peter Kozodoy , S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.

• Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
  M. Gherasimova, B. Gaffey, P. Mitev, L.J. Guido, K.L. Chang, K.C. Hsieh, S. Mitha, J. Spear.

• Heterostructure for UV LEDs Based on Thick AlGaN Layers
  A. V. Sakharov, W. V. Lundin, A. Usikov, U. I. Ushakov, Yu A. Kudriavtsev, A.V. Lunev, Y.M. Sherniakov, N.N. Ledentsov.

• Comparative Growth of AlN on Singular and Off-Axis 6H and 4h-SiC by MOCVD
  S. Wilson, C.S. Dickens, J. Griffin, M.G. Spencer.

• Microstructure of GaN Grown on (111) Si by MOCVD
  D.M. Follstaedt, J. Han, P. Provencio, J.G. Fleming.

• Core-Level Photoemission From Stoichiometric GaN(0001)-1x1
  S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, M. Oshima.

• Study of GaN films grown by metalorganic chemical vapour deposition
  W. Van der Stricht, I. Moerman, P. Demeester, J. A. Crawley, E. J. Thrush.

• Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
  J. L. Rouvière, M. Arlery, R. Niebuhr, K. H. Bachem, Olivier Briot.

• Review of polarity determination and control of GaN
  M. Sumiya, S. Fuke.

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  A. M. Witowski, M. L. Sadowski, K. Pakula, B. Suchanek, R. Stepniewski, Jacek M. Baranowski , M. Potemski, G. Martinez, P. Wyder.

• Cubic InGaN Grown by MOCVD
  J.B. Li, Hui Yang, L.X. Zheng, D.P. Xu, Y.T. Wang.

• Growth and Device Performance of GaN Schottky Rectifiers
  Jen-Inn Chyi , C. -M. Lee, C.C.Chuo, G. C. Chi, G. T. Dang, A. P. Zhang, Fan Ren , X.A. Cao, S.J. Pearton, S. N. G. Chu, R. G. Wilson.

• Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x0.15) Grown by Metal-Organic Chemical Vapor Deposition
  J. Wagner, A. Ramakrishnan, D. Behr, M. Maier, N. Herres, M. Kunzer, H. Ogloh, K-H. Bachem.

• Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
  Z.Y. Xie, C.H. Wei, L.Y. Li, J.H. Edgar, J. Chaudhuri, C. Ignatiev.

• The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
  Alan G. Thompson , M. Schurman, Z. C. Feng, R. F. Karlicek, T. Salagaj, C. A. Tran, R. A. Stall.

• Effects of Susceptor Geometry on GaN Growth on Si(111) with a New MOCVD Reactor
  Yungeng Gao, Daniel A. Gulino, Ryan Higgins.

• Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN
  Ki Soo Kim, Chang Seok Oh, Myung Soo Han, Chi Sun Kim, Gye Mo Yang, Jeon Wook Yang, Chang-Hee Hong, Chang Joo Youn, Kee Young Lim, Hyung Jae Lee.

• GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium
  Michael E. Bartram, J. Randall Creighton.

• Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
  Jung Han, M.H. Crawford, R.J. Shul, S.J. Hearne, E. Chason, J.J. Figiel, M. Banas.

• Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications
  Jae-Hoon Lee, Myoung-Bok Lee, Sung-Ho Hahm, Yong-Hyun Lee, Jung-Hee Lee, Young- Ho Bae, Hyun Kyung Cho.

MOCVD-grown

• Free excitons in strained MOCVD-grown GaN layers
  N.N. Syrbu, I.M. Tiginyanu, V.V. Ursaki, V.V. Zalamai, Veaceslav Popa , S.M. Hubbard, Dimitris Pavlidis.

model

• New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors
  John D. Albrecht, P. Paul Ruden, Mario G. Ancona.

• Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy
  M. Meyyappan.

modeling

• Current status of GaN crystal growth by sublimation sandwich technique
  P. G. Baranov, E. N. Mokhov, A. O. Ostroumov, M. G. Ramm, M. S. Ramm, V. V. Ratnikov, A. D. Roenkov, Yu. A. Vodakov, A. A. Wolfson, G. V. Saparin, S. Yu. Karpov, D. V. Zimina, Yu. N. Makarov, Holger Juergensen.

• Effects of Susceptor Geometry on GaN Growth on Si(111) with a New MOCVD Reactor
  Yungeng Gao, Daniel A. Gulino, Ryan Higgins.

MODFET

• High Frequency AlGaN/GaN MODFET's
  L. Eastman, K. Chu, W. Schaff, M. Murphy, N Weimann, T. Eustis.

• Research on GaN MODFET's
  L. Eastman, J. Burm, W. Schaff, M. Murphy, K. Chu, H. Amano, I. Akasaki.

MODFETs

• Characterization of Flicker Noise in GaN Based Modfets At Low Drain Bias
  W.Y. Ho, W.K. Fong, C. Surya, K.Y. Tong, W. Kim, A. Botcharev, H. Morkoc.

modulation doping

• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
  J. Dalfors, J. P. Bergman, P.O. Holtz, B. Monemar, H. Amano, I. Akasaki.

mole fraction.

• Direct SIMS Determination of the In_xGa_1-xN Mole Fraction
  A. P. Kovarsky, Yu. L. Kretser, Yu A. Kudriavtsev, D. N. Stroganov, M. A. Yagovkina, Tilman Beierlein , S. Strite.

molecular beam epitaxy

• Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
  M. V. Averyanova, S. Yu. Karpov, Yu. N. Makarov, I. N. Przhevalskii, M. S. Ramm, R. A. Talalaev.

• Surface Activity of Magnesium During GaN Molecular Beam Epitaxial Growth
  Vidhya Ramachandran, Randall M Feenstra, John E. Northrup, David W. Greve.

• MBE Growth of Nitride-Arsenide Materials for Long Wavelength Optoelectronics
  Sylvia G. Spruytte, Christopher W. Coldren, Ann F. Marshall, Michael C. Larson, James S. Harris.

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  A. R. Smith, V. Ramachandran, R. M. Feenstra, D. W. Greve, A. Ptak, T. Myers, W. Sarney, L. Salamanca-Riba, M. Shin, M. Skowronski.

• Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire
  A.J. Ptak, K.S. Ziemer, M.R. Millecchia, C.D. Stinespring, T.H. Myers.

• A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence Spectroscopy
  Abigail Bell, Ian Harrison, Dimitris Korakakis, Eric C Larkins, Jonathan M Hayes, Martin Kuball.

• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
  M.J. Murphy, B.E. Foutz, K. Chu, H. Wu, W. Yeo, W.J. Schaff, O. Ambacher, L.F. Eastman, T.J. Eustis, R. Dimitrov, M. Stutzmann, W. Rieger.

• High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer
  M. J. Jurkovic, L. K. Li, B. Turk, W. I. Wang, S. Syed, D. Simonian, H. L. Stormer.

• Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
  T. S. Cheng, C. T. Foxon, N. J. Jeffs, D. J. Dewsnip, L. Flannery, J. W. Orton, S. V. Novikov, B. Ya Ber, Yu A. Kudriavtsev.

• The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/sapphire Templates
  Alexander P. Young, Leonard J. Brillson, Yoshiki Naoi, Charles W. Tu.

• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
  Donat Josef As, Andreas Richter, Joerg Busch, Bernd Schoettker, Martin Luebbers, Juergen Mimkes, Detlef Schikora, Klaus Lischka, Wilhelm Kriegseis, Wilhelm Burkhardt, Bruno K. Meyer.

• Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  L.-L. Chao, G. S. Cargill III, C. Kothandaraman, D. Cyr, G. Flynn, E. S. Hellman, D. Wiesmann, D. N. E. Buchanan, I. Brener.

• Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
  Huajie Chen, A.R. Smith, R.M. Feenstra, D.W. Greve, J.E. Northrup.

• Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy
  Zhaoqiang Fang, David C Look, Wook Kim, Hadis Morkoc.

• Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy
  M. Meyyappan.

• The Effect of Al in Plasma-Assisted MBE-Grown GaN
  Otto Zsebök, Jan V Thordson, Qingxiang Zhao, Ulf Södervall, Lars Ilver, Thorvald G Andersson.

• Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
  C.T. Foxon, T.S. Cheng, D. Korakakis, S.V. Novikov, R.P. Campion, I. Grzegory, S. Porowski, M. Albrecht, H.P. Strunk.

• Growth of InN by MBE
  W.-L. Chen, R. L. Gunshor, Jung Han, K. Higashimine, N. Otsuka.

• MBE Growth Of GaN Films In Presence Of Surfactants: The Effect Of Mg And Si
  Guido Mula, Bruno Daudin, Christoph Adelmann, Philippe Peyla.

Monte Carlo

• Ensemble Monte Carlo Study of Electron Transport in Bulk InN
  E. Bellotti, B. Doshi, K.F. Brennan, P.P. Ruden.

• Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
  Shean-Yih Chiu, A.F.M. Anwar, Shangli Wu.

Monte Carlo methods

• Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs
  Maziar Farahmand, Kevin Brennan.

montecarlo

• Monte Carlo Simulation of Hall Effect in n-Type GaN
  J.D. Albrecht, P.P. Ruden, E. Bellotti, K.F. Brennan.

morphology

• Comparison of Luminescence and Physical Morphologies of GaN Epilayers
  Carol Trager-Cowan , P. G. Middleton, K. P. O'Donnell, S. Ruffenach-Clur, Olivier Briot.

• Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
  J. L. Rouvière, M. Arlery, R. Niebuhr, K. H. Bachem, Olivier Briot.

• Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
  O. Zsebök, J.V. Thordson, T.G. Andersson.

• The Morphology and Cathodoluminescence of GaN Thin Films
  C. Trager-Cowan, P. G. Middleton, K. P. O'Donnell.

MOSFET

• Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates
  Nezih Pala, R. Gaska, M. Shur, J. W. Yang, M. A. Khan.

MOVPE

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  J. Kozlowski, R. Paszkiewicz, R. Korbutowicz, M. Panek, B. Paszkiewicz, M. Tlaczala.

• MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics
  Jung Han, Jeffrey Figiel, Gary Petersen, Samuel Myers, Mary Crawford, Michael Banas, Sean Hearne.

• Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
  Zhonghai Yu, M.A.L. Johnson, J.D. Brown, N.A. El-Masry, J.F. Muth, J.W. Cook, Jr., J.F. Schetzina, K.W. Haberern, H.S. Kong, J.A. Edmond.

• Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
  P. de Mierry, B. Beaumont, E. Feltin, H.P.D. Schenk, Pierre GIBART, F. Jomard, S. Rushworth, L. Smith, R. Odedra.

• Novel approach to simulation of group-III nitrides growth by MOVPE
  S. Yu. Karpov, V. G. Prokofyev, E. V. Yakovlev, R. A. Talalaev, Yu. N. Makarov.

• GaN Homoepitaxy for Device Applications
  M. Kamp, C. Kirchner, V. Schwegler, A. Pelzmann, E.J. Ebeling, M. Lesczczynski, I. Grzegory, T. Suski, S. Porowski.

• Alternative N precursors and Mg doped GaN grown by MOVPE
  B. Beaumont, M. Vaille, P. Lorenzini, Pierre Gibart , T. Boufaden, B. el Jani.

• Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
  R. A. Talalaev, E. V. Yakovlev, S. Yu. Karpov, Yu. N. Makarov, O. Schoen, M. Heuken, G. Strauch, Holger Juergensen.

• Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Using Tungsten Mask
  Yasutoshi Kawaguchi, Shingo Nambu, Hiroki Sone, Masahito Yamaguchi, Hideto Miyake, Kazumasa Hiramatsu, Nobuhiko Sawaki, Yasushi Iyechika, Takayoshi Maeda.

• Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy
  R. Y. Korotkov, B. W. Wessels.

• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
  R. Zhang, L. Zhang, D.M. Hansen, Marek P. Boleslawski, K.L. Chen, D.Q. Lu, B. Shen, Y.D. Zheng, T.F. Kuech.

• A Critical Comparison Between MBE and MOVPE Growth of III-V Nitride Heterostructures for Optoelectronic Device Applications
  M.A.L. Johnson, Zhonghai Yu, J.D. Brown, F.A. Koeck, N.A. El-Masry, H.S. Kong, J.A. Edmond, J.W. Cook, Jr., J.F. Schetzina.

• Phase Separation in wurtzite In_1-x-yGa_xAl_yN
  T. Matsuoka.

• Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via MOVPE
  Kazuyuki Tadatomo, Yoichiro Ohuchi, Hiroaki Okagawa, Hirotaka Itoh, Hideto Miyake, Kazumasa Hiramatsu.

• Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
  D.B. Thomson, T. Gehrke, K.J. Linthicum, P. Rajagopal, R.F. Davis.

• Gallium Nitride Growth Using Diethylgallium Chloride As An Alternative Gallium Source
  Ling Zhang, Rong Zhang, Marek P. Boleslawski, T.F. Kuech.

• MOVPE Growth and Structural Characterization of Al_xGa_1-xN
  S. Ruffenach-Clur, Olivier Briot, Bernard Gil, Roger-Louis Aulombard, J. L. Rouviere.

• Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor
  R.W. Chuang, A.Q. Zou, H.P. Lee, Z.J. Dong, F.F. Xiong, R. Shih, M. Bremser, H. Juergensen.

• High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors
  D. Schmitz, R. Beccard, O. Schoen, R. Niebuhr, B. Wachtendorf, Holger Juergensen .

• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  A. Sohmer, J. Off, H. Bolay, V. Härle, V. Syganow, Jin Seo Im, V. Wagner, F. Adler, Andreas Hangleiter , A. Dörnen, Ferdinand Scholz, D. Brunner, O. Ambacher, H. Lakner.

• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, Robert F. Davis, H. Tsuda, W. Taki, N. Kuwano, K. Oki.

• Structure of MOVPE Deposited AlN on Si(111)
  Eric Rehder, M. Zhou, L. Zhang, N.R. Perkins, S.E. Babcock, T.F. Kuech.

• The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy
  P. Li, Soo-jin Chua, M Hao, W. Wang, X. Zhang, T. Sugahara, S. Sakai.

• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
  Tsvetanka S. Zheleva, Scott A. Smith, Darren B. Thomson, Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Eric Carlson, Waeil M. Ashmawi, Robert F. Davis.

MOVPE growth

• Enhanced GaN Decomposition At MOVPE Pressures
  D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, R.J. Gorman.

MQW

• Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
  Michael C.Y. Chan, Kwok-On Tsang, E. Herbert Li, Steven P. DenBaars.

MQW structure

• Optical Properties of AlGaN Quantum Well Structures
  Hideki Hirayama, Yasushi Enomoto, Atsuhiro Kinoshita, Akira Hirata, Yoshinobu Aoyagi.

MQWs

• Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
  W. Shan, J.W. Ager III, W. Walukiewicz, E.E. Haller, M.D. McCluskey, N.M. Johnson, D.P. Bour.

multi-quantum well

• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  P. Kung, A. Saxler, D. Walker, A. Rybaltowski, Xiaolong Zhang , J. Diaz, M. Razeghi.

multi-quantum wells

• Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
  Annalisa Bonfiglio, Mauro Lomascolo, Giampiero Traetta, Roberto Cingolani, Aldo Di Carlo, Fabio Della Sala, Paolo Lugli, Andrei Botchkarev, Hadis Morkoc.

multi-quantum-well

• Optical Properties of Si-Doped Al_xGa_1-xN/Al_yGa_1-yN (x=0.24-0.53, y=0.11) Multi-Quantum-Well Structures
  H. Hirayama, Y. Aoyagi.

multiple quantum well

• Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
  B. Monemar, J. P. Bergman, J. Dalfors, G. Pozina, B.E. Sernelius, P.O. Holtz, H. Amano, I. Akasaki.

multiwafer

• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
  O. Schoen, D. Schmitz, M. Heuken, Holger Juergensen, M. D. Bremser.

multiwafer reactor

• High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors
  D. Schmitz, R. Beccard, O. Schoen, R. Niebuhr, B. Wachtendorf, Holger Juergensen .

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