MIJ-NSR Keyword Index, Keywords starting with L

Laser

• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
  S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, T. Mukai.

• Fabrication of Smooth GaN-Based Laser Facets
  D.A. Stocker, E.F. Schubert, K.S. Boutros, J.M. Redwing.

• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
  M.P. Mack, A. Abare, M. Aizcorbe, Peter Kozodoy , S. Keller, U. K. Mishra, L. Coldren, Steven DenBaars .

• Characteristic Temperature Estimation for GaN-Based Lasers
  T. Honda, H. Kawanishi, T. Sakaguchi, F. Koyama, K. Iga.

laser diode

• Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  Shuji Nakamura .

• Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
  Monica Hansen, P.T. Fini, Lijie Zhao, Amber Abare, Larry A. Coldren, Jim Speck, Steven P. DenBaars.

• Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes
  Isamu Akasaki, Satoshi Kamiyama, Theeradatch Detchprohm, Tetsuya Takeuchi, Hiroshi Amano.

• Low dislocation density, high power InGaN laser diodes
  Piotr Perlin , M. Leszczynski, P. Prystawko, P. Wisniewski, R. Czernetzki, C. Skierbiszewski, G. Nowak, W. Purgal, J. L. Weyher, G. Kamler, J. Borysiuk, M. Krysko, M. Sarzynski, T. Suski, E. Litwin-Staszewska, L. Dmowski, G. Franssen, S. Grzanka, T. Swietlik, I. Grzegory, M. Bockowski, B. Lucznik, S. Porowski, L. Gorczyca, A. Bering, W. Krupczynski, I. Makarowa, R. Wisniewska, A. Libura.

• Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers
  Masayoshi Koike, S. Yamasaki, Yuta Tezen, S. Nagai, S. Iwayama, A. Kojima.

• A Perspective on the GaN Injection Laser
  J. I. Pankove.

laser diodes

• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
  S. Bidnyk, B.D. Little, Y.H. Cho, J. Krasinski, J.J. Song, W. Yang, S.A. McPherson.

• Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
  Monica Hansen, Amber C. Abare, Peter Kozodoy, Thomas M. Katona, Michael D. Craven, Jim S. Speck, Umesh K. Mishra, Larry A. Coldren, Steven P. DenBaars.

laser gain

• Theory of the Gain Characteristics of InGaN/AlGaN QD Lasers
  A.D. Andreev, E.P. O'Reilly.

lasers

• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  P. Kung, A. Saxler, D. Walker, A. Rybaltowski, Xiaolong Zhang , J. Diaz, M. Razeghi.

lasing

• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
  O. Schoen, D. Schmitz, M. Heuken, Holger Juergensen, M. D. Bremser.

• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
  S. Bidnyk, B.D. Little, Y.H. Cho, J. Krasinski, J.J. Song, W. Yang, S.A. McPherson.

lateral

• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  B. Beaumont, M. Vaille, G. Nataf, A. Bouillé, J.-C. Guillaume, P. Vénnègues, S. Haffouz, Pierre Gibart .

• Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  Hugues Marchand , J.P. Ibbetson, Paul T. Fini , Peter Kozodoy , S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.

lateral epitaxial growth

• Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
  Monica Hansen, P.T. Fini, Lijie Zhao, Amber Abare, Larry A. Coldren, Jim Speck, Steven P. DenBaars.

• Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy
  T. S. Kuan, C. K. Inoki, Y. Hsu, D. L. Harris, R. Zhang, S. Gu, T. F. Kuech.

• Dislocation Arrangement in a Thick LEO GaN Film on Sapphire
  Kathleen A Dunn, Sue Babcock, Donald S Stone, Richard J Matyi, Ling Zhang, Thomas F. Kuech.

lateral epitaxial overgrowth

• Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
  H. Marchand, J.P. Ibbetson, P.T. Fini, X.H. Wu, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra.

lateral epitaxy

• Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
  D.B. Thomson, T. Gehrke, K.J. Linthicum, P. Rajagopal, R.F. Davis.

• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
  Tsvetanka S. Zheleva, Scott A. Smith, Darren B. Thomson, Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Eric Carlson, Waeil M. Ashmawi, Robert F. Davis.

LATERAL OVERGROWTH

• GaN: From Selective Area Epitaxy To Epitaxial Lateral Overgrowth
  X. Li, S.G. Bishop, J.J. Coleman.

• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
  S. Bidnyk, B.D. Little, Y.H. Cho, J. Krasinski, J.J. Song, W. Yang, S.A. McPherson.

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.

lattice location

• RBS Lattice Site Location and Damage Recovery Studies on Er Implanted GaN
  E. Alves, M.F. DaSilva, J.C. Soares, J. Bartels, R. Vianden, C.R. Abernathy, S.J. Pearton.

• Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN
  William R Wampler, John C Barbour, Carl H Seager, Samuel M Myers, Alan F Wright, Jung Han.

lattice mismatch

• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, Robert F. Davis, H. Tsuda, W. Taki, N. Kuwano, K. Oki.

lattice relaxation

• Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects
  I. Gorczyca, A. Svane, N. E. Christensen.

LE4

• Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)
  H.P. Gillis, M.B. Christopher, K.P. Martin, D.A. Choutov.

leak

• Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
  Kay Domen , Reiko Soejima, Akito Kuramata , Toshiyuki Tanahashi.

leakage

• Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
  Subash Krishnankutty, Wei Yang, Thomas Nohava, P. Paul Ruden.

LED

• GaN based LED's with different recombination zones
  M. Schauler, C. Kirchner, M. Mayer, A. Pelzmann, F. Eberhard, Markus Kamp , P. Unger, K. J. Ebeling.

• Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
  Markus Kamp , M. Mayer, A. Pelzmann, K. J. Ebeling.

• Heterostructure for UV LEDs Based on Thick AlGaN Layers
  A. V. Sakharov, W. V. Lundin, A. Usikov, U. I. Ushakov, Yu A. Kudriavtsev, A.V. Lunev, Y.M. Sherniakov, N.N. Ledentsov.

• Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x0.15) Grown by Metal-Organic Chemical Vapor Deposition
  J. Wagner, A. Ramakrishnan, D. Behr, M. Maier, N. Herres, M. Kunzer, H. Ogloh, K-H. Bachem.

• Temperature Distribution in InGaN-MQW LEDs Under Operation
  Veit Schwegler, M. Seyboth, S. Schad, M. Scherer, C. Kirchner, M. Kamp, U. Stempfle, W. Limmer, R. Sauer.

• Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
  T.A. Kennedy, E.R. Glaser, W.E. Carlos, P.P. Ruden, Shuji Nakamura.

• A Critical Comparison Between MBE and MOVPE Growth of III-V Nitride Heterostructures for Optoelectronic Device Applications
  M.A.L. Johnson, Zhonghai Yu, J.D. Brown, F.A. Koeck, N.A. El-Masry, H.S. Kong, J.A. Edmond, J.W. Cook, Jr., J.F. Schetzina.

• GaN m-i-n LED grown by MOVPE
  Da-cheng Lu, Xianglin Liu, Du Wang, Xiaohui Wang, Lanying Lin.

• Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
  Veit Schwegler, M. Seyboth, C. Kirchner, M. Scherer, M. Kamp, P. Fischer, J. Christen, M. Zacharias.

• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
  S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, T. Mukai.

LEDs

• GaN Homoepitaxy for Device Applications
  M. Kamp, C. Kirchner, V. Schwegler, A. Pelzmann, E.J. Ebeling, M. Lesczczynski, I. Grzegory, T. Suski, S. Porowski.

• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  F. Calle, E. Monroy, F. J. Sánchez, E. Muñoz, B. Beaumont, S. Haffouz, M. Leroux, Pierre Gibart .

• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
  Nicolas Grandjean, Jean Massies, Mathieu Leroux, Marguerite Laugt, Philippe Vennegues, Stephane Dalmasso, Pierre Ruterana, Lionel Hirsch, Serge Barriere.

LEED

• Preparation of stoichiometric GaN(0001)-1x1: an XPS study
  S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, H.W. Yeom, H. Miki, M. Oshima.

level(s)

• Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
  Adrian Hierro, D. Kwon, S. A. Ringel, M. Hansen, U. K. Mishra, S. P. DenBaars, J. S. Speck.

levels

• In-depth Analysis of the Impurities in GaN
  A. P. Kovarsky, V. S. Strykanov.

LiAlO₂

• Epitaxial Growth and Orientation of GaN on (1 0 0) -LiAlO2
  E. S. Hellman, Z. Liliental-Weber, D. N. E. Buchanan.

lifetimes

• Phonon Dynamics and Lifetimes of AlN and GaN Crystallites
  Leah Bergman, Dimitri Alexson, Robert J. Nemanich, Mitra Dutta, Michael A. Stroscio, Cengiz Balkas, Robert F. Davis.

light emission

• Visible and Infrared Emission of GaN:Er Thin Films Grown by Sputtering
  Hong Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, H. J. Lozykowski.

Light Emitting Diodes

• Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitxy
  U. Hommerich, J.T. Seo, Myo Thaik, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, R.G. Wilson, J.M. Zavada.

• Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor
  R.W. Chuang, A.Q. Zou, H.P. Lee, Z.J. Dong, F.F. Xiong, R. Shih, M. Bremser, H. Juergensen.

light-emitting diodes

• Luminescence Spectra Of Superbright Blue and Green InGaN/AlGaN/GaN Light-Emitting Diodes
  K. G. Zolina, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, Shuji Nakamura .

• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. Kovalev, F. Manyakhin.

• Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
  F. Manyakhin, A. Kovalev, A. E. Yunovich.

• Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Multiple Quantum Wells
  A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. N. Kovalev, F. I. Manyakhin.

liquid phase.

• The role of gaseous species in group-III nitride growth
  S. Yu. Karpov, Yu. N. Makarov, M. S. Ramm.

local vibration

• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
  W.M. Chen, I.A. Buyanova, Mt. Wagner, B. Monemar, J.L. Lindstrom, H. Amano, I. Akasaki, I. Akasaki.

Local Vibrational Modes

• Influence of Doping on the Lattice Dynamics GaN
  A. Kaschner, H. Siegle, A. Hoffmann, C. Thomsen, U. Birkle, S. Einfeldt, D. Hommel.

localization of carriers

• Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
  Yong-Hoon Cho, Gordon H. Gainer, Jack B. Lam, Jin Joo Song, W. Yang, Wonho Jhe.

localized epitaxy

• Localized Epitaxy of GaN by HVPE on patterned Substrates
  O. Parillaud, V. Wagner, H. J. Buehlmann, Marc ILEGEMS .

localized exciton

• Spectroscopic Studies in InGaN Quantum Wells
  S.F. Chichibu, T. Sota, K. Wada, S.P. DenBaars, S. Nakamura.

localized state

• Optical Gain Spectra in GaN/InGaN Quantum Wells with the Compositional Fluctuations
  Takeshi Uenoyama.

losses

• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  Pawel Mackowiak, Wlodzimierz Nakwaski.

low frequency noise

• Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates
  Nezih Pala, R. Gaska, M. Shur, J. W. Yang, M. A. Khan.

low pressure MOCVD

• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  P. Kung, A. Saxler, D. Walker, A. Rybaltowski, Xiaolong Zhang , J. Diaz, M. Razeghi.

Low temperature interlayer

• Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
  H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel, I. Akasaki.

Low temperature nitridation

• Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
  Gon Namkoong, W. Alan Doolittle, Sangbeom Kang, Huang Sa, April S. Brown, Stuart R. Stock .

LT-AlN interlayer

• High-Quality Al_xGa_1-xN Using Low Temperature-Interlayer and its Application to UV Detector
  Motoaki Iwaya, Shinji Terao, Nobuaki Hayashi, T. Kashima, Theeradatch Detchprohm, Hiroshi Amano, Isamu Akasaki, Akira Hirano, Cyril Pernot.

luminescence

• Free Excitons in GaN
  B. Monemar, J. P. Bergman, I. A. Buyanova, W. Li, H. Amano, I. Akasaki.

• Avalanche Breakdown Luminescence of InGaN/AlGaN/GaN Heterostructures
  F. Manyakhin, A. Kovalev, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich.

• Luminescence Spectra Of Superbright Blue and Green InGaN/AlGaN/GaN Light-Emitting Diodes
  K. G. Zolina, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, Shuji Nakamura .

• Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine
  Torsten K. Schmidtling, M. Klein, U. W. Pohl, W. Richter.

• A Perspective on the GaN Injection Laser
  J. I. Pankove.

• Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Multiple Quantum Wells
  A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. N. Kovalev, F. I. Manyakhin.

• Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
  Uwe H Hommerich, J. T. Seo, J. D. MacKenzie, C. R. Abernathy, R. Birkhahn, A. J. Steckl, J. M. Zavada.

• Photoluminescence and Cathodoluminescence of GaN Doped With Pr
  Henryk J. Lozykowski, Wojciech Jadwisienczak, I. Brown.

• Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
  S. Einfeldt, T. Bottcher, D. Hommel, H. Selke, P.L. Ryder, F. Gertram, T. Riemann, T. Riemann, D. Rudloff, J. Christen.

• Properties of GaN epilayers grown on misoriented sapphire substrates
  Carol Trager-Cowan , S. McArthur, P. G. Middleton, K. P. O'Donnell, D. Zubia, S. D. Hersee.

• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
  K. Pakula, M. Wojdak, M. Palczewska, B. Suchanek, Jacek M. Baranowski .

Luminescence.

• Luminescence From Erbium-Doped Gallium Nitride Thin Films
  J.M. Zavada, Myko Thaik, U. Hommerich, J.D. MacKenzie, C.R. Abernathy, F. Ren, H. Shen, J. Pamulapati, H. Jiang, J. Lin, R.G. Wilson.

• Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
  F. Manyakhin, A. Kovalev, A. E. Yunovich.

luminescent activation

• Visible Luminescent Activation of Amorphous AlN:Eu Thin-Film Phosphors with Oxygen
  Meghan L. Caldwell, P. G. Van Patten, Martin E. Kordesch, Hugh H Richardson.

  The keywords used in this indexing have been supplied by the authors.

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  Index last updated Tuesday, January 18, 2005 7:48:06 PM.
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