MIJ-NSR Keyword Index, I

MIJ-NSR Keyword Index, Keywords starting with I

ICP etching

Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
R.J. Shul, L. Zhang, C.G. Willison, J. Han, S.J. Pearton, J. Hong, C.R. Abernathy, L.F. Lester.

III nitrides

Study of Thin Films Polarity of Group III Nitrides
K. Dovidenko, S. Oktyabrsky, J. Narayan, M. Razeghi.

III-Nitrides

Ensemble Monte Carlo Study of Electron Transport in Bulk InN
E. Bellotti, B. Doshi, K.F. Brennan, P.P. Ruden.
Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates
Leo J Schowalter, Juan C Rojo, Nikolai Yakolev, Yuriy Shusterman, Katherine Dovidenko, Rungjun Wang, Ishwara Bhat, Glen A Slack.
Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
Hyun Cho, Y.B. Hahn, D.C. Hays, K.B. Jung, S.M. Donovan, C.R. Abernathy, S.J. Pearton, R.J. Shul.

III-V

Phase Separation in wurtzite In_1-x-yGa_xAl_yN
T. Matsuoka.

III-V nitrides

Optical Properties of Nitride-based Structures Grown on 6H-SiC
D.V. Tsvetkov, A.S. Zubrilov, V. I. Nikolaev, V Soloviev, V.A. Dmitriev.
Preparation of stoichiometric GaN(0001)-1x1: an XPS study
S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, H.W. Yeom, H. Miki, M. Oshima.
Core-Level Photoemission From Stoichiometric GaN(0001)-1x1
S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, M. Oshima.
Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
T. Gehrke, K.J. Linthicum, D.B. Thomson, P. Rajagopal, A.D. Batchelor, R.F. Davis.
Review of polarity determination and control of GaN
M. Sumiya, S. Fuke.

III-V semiconductors

Raman characterization of the optical phonons in Al_xGa_1-xN layers grown by MBE and MOCVD
A. Cros, H. Angerer, R. Handschuh, O. Ambacher, M. Stutzmann.

III/V flux ratio

The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/sapphire Templates
Alexander P. Young, Leonard J. Brillson, Yoshiki Naoi, Charles W. Tu.

imaging

Properties of GaN epilayers grown on misoriented sapphire substrates
Carol Trager-Cowan , S. McArthur, P. G. Middleton, K. P. O'Donnell, D. Zubia, S. D. Hersee.

Implantation

Characterization of Be-Implanted GaN Annealed At High Temperatures
C. Ronning, K.J. Linthicum, E.P. Carlson, P.J. Hartlieb, D.B. Thomson, T. Gehrke, R.F. Davis.
Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
K. Lorenz, R. Vianden, S.J. Pearton, Cammy R. Abernathy , J.M. Zavada.
Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structure
Gerard Dang, Xian An Cao, Fan Ren, Stephen J. Pearton, J. Han, A. G. Baca, R. J. Shul, R. G. Wilson.
Photoluminescence Characterization of Mg Implanted GaN
Carsten Ronning, Hans C. Hofsaess, Arno Stoetzler, Manfred Deicher, Eric P. Carlson, Philip J. Hartlieb, Thomas Gehrke, Pradeep Rajagopal, Robert F Davis.

in p-GaN

Zirconium Mediated Hydrogen Outdiffusion from p-GaN
Eliana Kaminska, A. Piotrowska, A. Barcz, J. Jasinski, M. Zielinski, K. Golaszewska, R. F. Davis, E. Goldys, K. Tomsia.

In-Situ RBS/Channeling

Effects of Oxygen Ion Implantation in Gallium Nitride
W. Jiang, W.J. Weber, S. Thevuthasan, G.J. Exarhos, B.J. Bozlee.

incorporation.

Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
R. A. Talalaev, E. V. Yakovlev, S. Yu. Karpov, Yu. N. Makarov, O. Schoen, M. Heuken, G. Strauch, Holger Juergensen.

indium

Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
R. A. Talalaev, E. V. Yakovlev, S. Yu. Karpov, Yu. N. Makarov, O. Schoen, M. Heuken, G. Strauch, Holger Juergensen.

indium fluctuations

The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
N. A. Shapiro, Piotr Perlin , Christian Kisielowski, L. S. Mattos, J. W. Yang, Eicke R. Weber .

INDIUM GALLIUM NITRIDE

Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
Lawrence Robins, A.J. Paul, C.A. Parker, J. C. Roberts, S. M. Bedair, E. L. Piner , N. A. El-Masry.
Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
Huajie Chen, A.R. Smith, R.M. Feenstra, D.W. Greve, J.E. Northrup.
Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
A. N. Cartwright, Paul M. Sweeney, Thomas Prunty, David P. Bour, Michael Kneissl.
Properties of InGaN deposited on Glass at Low Temperature
Tilman Beierlein , S. Strite, A. Dommann, D. J. Smith.

indium incorporation

Novel approach to simulation of group-III nitrides growth by MOVPE
S. Yu. Karpov, V. G. Prokofyev, E. V. Yakovlev, R. A. Talalaev, Yu. N. Makarov.

indium nitride

Properties of InGaN deposited on Glass at Low Temperature
Tilman Beierlein , S. Strite, A. Dommann, D. J. Smith.
Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature
J.R.L. Fernandez, V.A. Chitta, Eduardo Abramof, A. Ferreira da Silva, J.R. Leite, A. Tabata, D.J. As, T. Frey, D. Schikora, K. Lischka.
Ensemble Monte Carlo Study of Electron Transport in Bulk InN
E. Bellotti, B. Doshi, K.F. Brennan, P.P. Ruden.

induce absorption

Optical nonlinearities of Gallium Nitride
H. Haag, P. Gilliot, D. Ohlmann, R. Levy, Olivier Briot, Roger-Louis Aulombard.

induced emission shift

Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
Yong-Hoon Cho, Gordon H. Gainer, Jack B. Lam, Jin Joo Song, W. Yang, Wonho Jhe.

inductively coupled plasma

New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
Hyun Cho, J. Hong, T. Maeda, S.M. Donovan, J. Devin MacKenzie , Cammy R. Abernathy , S.J. Pearton, R. J. Shul, J. Han.

Inductively Coupled Plasma etching

Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
Hyun Cho, Y.B. Hahn, D.C. Hays, K.B. Jung, S.M. Donovan, C.R. Abernathy, S.J. Pearton, R.J. Shul.

influence of the additive gas (He

Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
Hyun Cho, Y.B. Hahn, D.C. Hays, K.B. Jung, S.M. Donovan, C.R. Abernathy, S.J. Pearton, R.J. Shul.

infrared

Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
J. Sik, M. Schubert, T. Hofmann, V. Gottschalch.
Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
M. Schubert, A. Kasic, T.E. Tiwald, J. Off, B. Kuhn, Ferdinand Scholz.

infrared emission

Photoluminescence Enhancement and Morphological Properties of Carbon Co-Doped GaN:Er
Mark Eddy Overberg, C. R. Abernathy, S. J. Pearton, R. G. Wilson, J. M. Zavada.

InGaAlN

Phase Separation in wurtzite In_1-x-yGa_xAl_yN
T. Matsuoka.

InGaN

Suppression of phase separation in InGaN due to elastic strain
S. Yu. Karpov.
The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy
P. Li, Soo-jin Chua, M Hao, W. Wang, X. Zhang, T. Sugahara, S. Sakai.
InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, T. Mukai.
Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content
AndrŽ Vantomme, Ming Fang Wu, Susan Hogg, Guido Langouche, Koen Jacobs, Ingrid Moerman, Madeleine White, Kevin O'Donnell, Leona Nistor, Jef Van Landuyt, Hugo Bender.
The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, Robert F. Davis, H. Tsuda, W. Taki, N. Kuwano, K. Oki.
Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
T.A. Kennedy, E.R. Glaser, W.E. Carlos, P.P. Ruden, Shuji Nakamura.
Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
Monica Hansen, P.T. Fini, Lijie Zhao, Amber Abare, Larry A. Coldren, Jim Speck, Steven P. DenBaars.
Cubic InGaN Grown by MOCVD
J.B. Li, Hui Yang, L.X. Zheng, D.P. Xu, Y.T. Wang.
Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
Huajie Chen, A.R. Smith, R.M. Feenstra, D.W. Greve, J.E. Northrup.
Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
S. Einfeldt, T. Bottcher, D. Hommel, H. Selke, P.L. Ryder, F. Gertram, T. Riemann, T. Riemann, D. Rudloff, J. Christen.
Optical Gain Spectra in GaN/InGaN Quantum Wells with the Compositional Fluctuations
Takeshi Uenoyama.
Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
J. Allègre, P. Lefebvre, S. Juillaguet, W. Knap, J. Camassel, Q. Chen, M. A. Khan.
Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
W. Shan, J.W. Ager III, W. Walukiewicz, E.E. Haller, M.D. McCluskey, N.M. Johnson, D.P. Bour.
Optical Spectroscopy of InGaN Epilayers in the Low Indium Composition Regime
Mary H. Crawford, Jung Han, Michael A. Banas, Samuel M. Myers, Gary A. Petersen, Jeffrey J. Figiel.
Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
Shean-Yih Chiu, A.F.M. Anwar, Shangli Wu.
Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x0.15) Grown by Metal-Organic Chemical Vapor Deposition
J. Wagner, A. Ramakrishnan, D. Behr, M. Maier, N. Herres, M. Kunzer, H. Ogloh, K-H. Bachem.
A Critical Comparison Between MBE and MOVPE Growth of III-V Nitride Heterostructures for Optoelectronic Device Applications
M.A.L. Johnson, Zhonghai Yu, J.D. Brown, F.A. Koeck, N.A. El-Masry, H.S. Kong, J.A. Edmond, J.W. Cook, Jr., J.F. Schetzina.
Comparison Study of Structural and Optical Properties of In_xGa_1-xN/GaN Quantum Wells With Different In Compositions
Yong-Hwan Kwon, G. H. Gainer, S. Bidnyk, Y. H. Cho, J. J. Song, M. Hansen, S. P. DenBaars.
The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
Alan G. Thompson , M. Schurman, Z. C. Feng, R. F. Karlicek, T. Salagaj, C. A. Tran, R. A. Stall.
Direct SIMS Determination of the In_xGa_1-xN Mole Fraction
A. P. Kovarsky, Yu. L. Kretser, Yu A. Kudriavtsev, D. N. Stroganov, M. A. Yagovkina, Tilman Beierlein , S. Strite.
Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
Axel Kaschner, Jens Holst, Ulrich von Gfug, Axel Hoffmann, Frank Bertram, Till Riemann, Dirk Rudloff, Peter Fischer, Jürgen Christen, Robert Averbeck, Henning Riechert.
Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
Nicolas Grandjean, Jean Massies, Mathieu Leroux, Marguerite Laugt, Philippe Vennegues, Stephane Dalmasso, Pierre Ruterana, Lionel Hirsch, Serge Barriere.
MOVPE growth optimization of high quality InGaN films.
W. Van der Stricht, I. Moerman, P. Demeester, L. Considine, E. J. Thrush, J. A. Crawley.
Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
R. A. Talalaev, E. V. Yakovlev, S. Yu. Karpov, Yu. N. Makarov, O. Schoen, M. Heuken, G. Strauch, Holger Juergensen.
Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
Michael C.Y. Chan, Kwok-On Tsang, E. Herbert Li, Steven P. DenBaars.
Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
Lawrence Robins, A.J. Paul, C.A. Parker, J. C. Roberts, S. M. Bedair, E. L. Piner , N. A. El-Masry.
Spectroscopic Studies in InGaN Quantum Wells
S.F. Chichibu, T. Sota, K. Wada, S.P. DenBaars, S. Nakamura.
Damage-Free Photoassisted Cryogenic Dry Etching and Photoelectrochemical Wet Etching of GaN
J.T. Hsieh, J.M. Hwang, H.L. Hwang, W.H. Hung.
Novel approach to simulation of group-III nitrides growth by MOVPE
S. Yu. Karpov, V. G. Prokofyev, E. V. Yakovlev, R. A. Talalaev, Yu. N. Makarov.
Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
Huajie Chen, R. M. Feenstra, J. Northrup, Jörg Neugebauer, D. W. Greve.
Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
B. Monemar, J.P. Bergman, J. Dalfors, G. Pozina, B.E. Sernelius, P.O. Holtz, H. Amano, I. Akasaki.
Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
B. Monemar, J. P. Bergman, J. Dalfors, G. Pozina, B.E. Sernelius, P.O. Holtz, H. Amano, I. Akasaki.
Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
S. Stepanov, W.N.Wang, B.S.Yavich, V. Bougrov, Y.T.Rebane, Y.G.Shreter.
Pinholes, Dislocations and Strain Relaxation in InGaN
B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.

InGaN laser

Theory of the Gain Characteristics of InGaN/AlGaN QD Lasers
A.D. Andreev, E.P. O'Reilly.

InGaN/GaN LD

Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
Y. Park, B.j. Kim, J. W. Lee, O. H. Nam, C. Sone, H. Park, Eunsoon Oh, H. Shin, S. Chae, J. Cho, Ig-Hyeon Kim, J.S. Khim, S. Cho, T.I. Kim.

InGaN/GaN quantum wells

Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells
B. Monemar, P.P.Paskov, J. P. Bergman, G. Pozina, V. Darakchieva, M. Iwaya, Satoshi Kamiyama, H. Amano, I. Akasaki.

ingot

GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
Vitaly A. Sukhoveyev, Vladimir A. Ivantsov, Irina P. Nikitina, Alexandr I. Babanin, A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, M. G. Mil'vidskii, Vladimir Dmitriev.

injection

Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
Kay Domen , Reiko Soejima, Akito Kuramata , Toshiyuki Tanahashi.

InN

Growth of InN by MBE
W.-L. Chen, R. L. Gunshor, Jung Han, K. Higashimine, N. Otsuka.
Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
K. Lorenz, R. Vianden, S.J. Pearton, Cammy R. Abernathy , J.M. Zavada.
Bandgap Variation at the Isostructural Phase Transformation of Wurtzite InN
L. Bellaiche, K. Kunc, M. Besson.

interaction

Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
K. Lorenz, R. Vianden, S.J. Pearton, Cammy R. Abernathy , J.M. Zavada.

interband

The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
Alexey V. Dmitriev, Alexander L. Oruzheinikov.

Interface Effects

Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
O.P. Seifert, O. Kirfel, M. Munzel, M.T. Hirsch, J. Parisi, M. Kelly, O. Ambacher.

interface reactions

Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts
Holger Cordes , Y. A. Chang.

interfacial reaction

Thermal Stability of GaN Investigated by Raman Scattering
M. Kuball, F. Demangeot, J. Frandon, M.A. Renucci, N. Grandjean, O. Briot.

interference

Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
Ivan Tiginyanu, I. V. Kravetsky, D. Pavlidis, A. Eisenbach, R. Hildebrandt, G. Marowsky, H. L. Hartnagel.

intermediate-temperature buffer layer

Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
W.K. Fong, C. F. Zhu, B. H. Leung, Charles Surya .

intermixing

Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
M.D. McCluskey, L.T. Romano, B.S. Krusor, D. Hofstetter, D.P. Bour, M. Kneissl, N.M. Johnson, T. Suski, J. Jun.
Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
Michael C.Y. Chan, Kwok-On Tsang, E. Herbert Li, Steven P. DenBaars.

internal strain

The role of gaseous species in group-III nitride growth
S. Yu. Karpov, Yu. N. Makarov, M. S. Ramm.

inversion domain boundaries

Simulations of Defect-Interface Interactions in GaN
James Chisholm, Paul D Bristowe.

inversion domains

Study of Thin Films Polarity of Group III Nitrides
K. Dovidenko, S. Oktyabrsky, J. Narayan, M. Razeghi.

ion channeling

Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium
W.R. Wampler, S.M. Myers.
Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
L.J. Schowalter, Y. Shusterman, R. Wang, I. Bhat, G. Arunmozhi, G.A. Slack.

ion implantation

Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN
I. Usov, N. Parikh, D.B. Thomson, Robert F. Davis.
Optical Activation Behavior of Ion Implanted Acceptor Species in GaN
B. J.. Skromme, G. L. Martinez.
Rapid Thermal Processing of Implanted GaN Up To 1500°C
X.A. Cao, S.J. Pearton, R.K. Singh, C.R. Abernathy, J. Han, R.J. Shul, D.J. Rieger, J.C. Zolper, R.G. Wilson, M. Fu, J.A. Sekhar, H.J. Guo, S.J. Pennycook.
The Behavior of Ion-Implanted Hydrogen in Gallium Nitride
S.M. Myers, T.J. Headley, C.R. Hills, J. Han, G.A. Petersen, C.H. Seager, W.R. Wampler.
GaN p-n Structures Fabricated by Mg Ion Implantation
E.V. Kalinina, V.A. Solov'ev, A.S. Zubrilov, V.A. Dmitriev, A.P. Kovarsky.
Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes
Arno Stötzler, Ralf Weissenborn, Manfred Deicher.
The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films
Martin Kuball, J.M. Hayes, T. Suski, J. Jun, H. H. Tan, J. S. Williams, C. Jagadish.
Wet Etching of Ion-Implanted GaN Crystals by AZ-400K Photoresist
Carmine A Carosella, Bela Molnar, Stefanie Schiestel, James A Sprague.

ion-implantation

Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
A. Pelzmann, S. Strite, A. Dommann, C. Kirchner, Markus Kamp , K. J. Ebeling, A. Nazzal.
Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
S. Strite, A. Pelzmann, T. Suski, M. Leszczynski, J. Jun, A. Rockett, Markus Kamp , K. J. Ebeling.
Spectroscopy of Proton Implanted GaN
M.G. Weinstein, M. Stavola, C.Y. Song, C. Bozdog, H. Przbylinski, G.D. Watkins, S.J. Pearton, R.G. Wilson.

isolation

Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structure
Gerard Dang, Xian An Cao, Fan Ren, Stephen J. Pearton, J. Han, A. G. Baca, R. J. Shul, R. G. Wilson.

The keywords used in this indexing have been supplied by the authors.