MIJ-NSR Keyword Index, Keywords starting with H

Hall

• Properties of InGaN deposited on Glass at Low Temperature
  Tilman Beierlein , S. Strite, A. Dommann, D. J. Smith.

Hall-effect

• Electrical Profiles in GaN/Al₂O₃ Layers with Conductive Interface Regions
  D.C. Look, J. E. Hoelscher, J. L. Brown, G. D. Via.

hardness

• Hardness of bulk single-crystal GaN and AlN
  Ichiro Yonenaga.

• High Temperature Hardness of Bulk Single Crystal GaN
  Ichiro Yonenaga, Tetsuya Hoshi, Akira Usui.

harmonic generation

• Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
  Ivan Tiginyanu, I. V. Kravetsky, D. Pavlidis, A. Eisenbach, R. Hildebrandt, G. Marowsky, H. L. Hartnagel.

HBT

• High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter
  J. I. Pankove, M. Leksono, S. S. Chang, C. Walker, B. Van Zeghbroeck.

• Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures
  A. Michel, D. Hanser, R. F. Davis, D. Qiao, S. S. Lau, L. S. Yu, W. Sun, P. Asbeck.

• Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
  Shean-Yih Chiu, A.F.M. Anwar, Shangli Wu.

• A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
  John T Torvik , M. Leksono, J. I. Pankove, B. Van Zeghbroeck.

He-ion

• Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
  S.A. Goodman, F.D. Auret, F.K. Koschnick, J-M. Spaeth, B. Beaumont, P. Gibart.

heat flow

• The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
  K.A. Filippov, A.A. Balandin.

HEMT

• AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties
  Edwin L Piner, David M Keogh, Jeff S Flynn, Joan M Redwing.

• Current limitation after pinch-off in AlGaN/GaN FETs
  R. Dietrich, A. Wieszt, A. Vescan, H. Leier, Joan M. Redwing, Karim S. Boutros, K. Kornitzer, R. Freitag, T. Ebner, K. Thonke.

HEMTs

• Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?
  Jianyu Deng, Remis Gaska, Michael S. Shur, Asif Khan, J. W. Yang.

heteroepitaxy

• Epitaxial Growth and Orientation of GaN on (1 0 0) -LiAlO2
  E. S. Hellman, Z. Liliental-Weber, D. N. E. Buchanan.

• Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE
  P. Ruterana, Philippe Vermaut , G. Nouet, A. Salvador, H. Morkoç.

Heterojunction Bipolar Transistor

• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  Fan Ren , Cammy R. Abernathy , J. M. Van Hove, P. P. Chow, R. Hickman, J. J. Klaassen, R. F. Kopf, Hyun Cho, K. B. Jung, J. R. La Roche, R. G. Wilson, J. Han, R. J. Shul, A. G. Baca, S.J. Pearton.

heterostructure

• Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
  P.P. Ruden, J.D. Albrecht, A. Sutandi, S.C. Binari, K. Ikossi-Anastasiou, M.G. Ancona, R.L. Henry, D.D. Koleske, A.E. Wickenden.

• Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
  T. Gehrke, K.J. Linthicum, D.B. Thomson, P. Rajagopal, A.D. Batchelor, R.F. Davis.

• Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures
  A. Michel, D. Hanser, R. F. Davis, D. Qiao, S. S. Lau, L. S. Yu, W. Sun, P. Asbeck.

heterostructures

• Avalanche Breakdown Luminescence of InGaN/AlGaN/GaN Heterostructures
  F. Manyakhin, A. Kovalev, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich.

• Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
  E. L. Piner, F. G. McIntosh, J. C. Roberts, M. E. Aumer, V. A. Joshkin, S. M. Bedair, N. A. El-Masry.

• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. Kovalev, F. Manyakhin.

• Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Multiple Quantum Wells
  A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. N. Kovalev, F. I. Manyakhin.

hexagonal

• Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor Deposition
  Seikoh Yoshida, T. Kimura, J. Wu, J. Kikawa, K. Onabe, Y. Shiraki.

HFET

• Correlation Between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity In AlGaN/GaN Modulation Doped Heterostructures
  Jizhong Li, Jing Li, Jingyu Lin, Hongxing Jiang.

high density plasma damage

• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
  Anping Zhang, Gerard Dang, F. Ren, X.A. CAo, H. Cho, E.S. Lambers, S.J. Pearton, R.J. Shul, L. Zhang, A.G. Baca, R. Hickman, J.M. Van Hove.

High Electron Mobility Transistor

• Physics-Based Intrinsic Model for AlGaN/GaN HEMTs
  Shangli Wu, Richard T. Webster, A.F.M. Anwar.

high excitation

• Gain Spectroscopy of HVPE-Grown GaN
  L. Eckey, J.-Chr. Holst, A. Hoffmann, I. Broser, T. Detchprohm, K. Hiramatsu.

high pressure crystal growth

• Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
  S. Krukowski.

high pressure growth

• Low dislocation density, high power InGaN laser diodes
  Piotr Perlin , M. Leszczynski, P. Prystawko, P. Wisniewski, R. Czernetzki, C. Skierbiszewski, G. Nowak, W. Purgal, J. L. Weyher, G. Kamler, J. Borysiuk, M. Krysko, M. Sarzynski, T. Suski, E. Litwin-Staszewska, L. Dmowski, G. Franssen, S. Grzanka, T. Swietlik, I. Grzegory, M. Bockowski, B. Lucznik, S. Porowski, L. Gorczyca, A. Bering, W. Krupczynski, I. Makarowa, R. Wisniewska, A. Libura.

high pressure solution growth

• Near Defect Free GaN Substrates
  S. Porowski.

high-performance

• High-Performance Solar-Blind AlGaN Schottky Photodiodes
  Necmi Biyikli, Tolga Kartaloglu, Orhan Aytur, Ibrahim Kimukin, Ekmel Ozbay.

high-speed

• High-Performance Solar-Blind AlGaN Schottky Photodiodes
  Necmi Biyikli, Tolga Kartaloglu, Orhan Aytur, Ibrahim Kimukin, Ekmel Ozbay.

• High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes
  Necmi Biyikli, Tolga Kartaloglu, Orhan Aytur, Ibrahim Kimukin, Ekmel Ozbay.

high-temperature processing

• Thermal Stability of GaN Investigated by Raman Scattering
  M. Kuball, F. Demangeot, J. Frandon, M.A. Renucci, N. Grandjean, O. Briot.

higher temperature device operation

• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  Fan Ren , Cammy R. Abernathy , J. M. Van Hove, P. P. Chow, R. Hickman, J. J. Klaassen, R. F. Kopf, Hyun Cho, K. B. Jung, J. R. La Roche, R. G. Wilson, J. Han, R. J. Shul, A. G. Baca, S.J. Pearton.

hole injection

• Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
  Kay Domen , Reiko Soejima, Akito Kuramata , Toshiyuki Tanahashi.

holograhpy

• Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
  Daniel Hofstetter, Robert L. Thornton, Linda T. Romano, David P. Bour, Michael Kneissl, Rose M. Donaldson, Clarence Dunnrowicz.

homoepitaxy

• Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD
  A. R.A. Zauner, J. J. Schermer, W. J.P. van Enckevort, V. Kirilyuk, J. L. Weyher, I. Grzegory, P. R. Hageman, P. K. Larsen.

• GaN Homoepitaxy for Device Applications
  M. Kamp, C. Kirchner, V. Schwegler, A. Pelzmann, E.J. Ebeling, M. Lesczczynski, I. Grzegory, T. Suski, S. Porowski.

• Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
  Markus Kamp , M. Mayer, A. Pelzmann, K. J. Ebeling.

HREM

• High-temperature structural behavior of Ni/Au Contact on GaN(0001)
  Chong Cook Kim, Jong Kyu Kim, Jong-Lam Lee, Jung Ho Je, Min-Su Yi, Do Young Noh, Y. Hwu, P. Ruterana.

• Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC
  Philippe Vermaut , P. Ruterana, G. Nouet, A. Salvador, H. Morkoç.

HRTEM

• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
  Chang-Hee Hong, Ki Soo Kim, Won-Hee Lee, Chi Sun Kim, Ok Hwan Cha, Gye Mo Yang, Eun-Kyung Suh, Kee Young Lim, Hyung Jae Lee, Hyung Koun Cho, Jeong Yong Lee, Jae Myung Seo.

HVPE

• Strain relaxation in GaN layers grown on porous GaN sublayers
  M. Mynbaeva, A. Titkov, A. Kryzhanovski, I. Kotousova, A.S. Zubrilov, V.V. Ratnikov, V. Yu. Davydov, N.I. Kuznetsov, K. Mynbaev, D.V. Tsvetkov, S. Stepanov, A.Cherenkov, V.A. Dmitriev.

• Review of polarity determination and control of GaN
  M. Sumiya, S. Fuke.

• Physical Properties of Bulk GaN Crystals Grown by HVPE
  Yu.V. Melnik, K.V. Vassilevski, I.P. Nikitina, A.I. Babanin, V. Yu. Davydov, V.A. Dmitriev.

• Localized Epitaxy of GaN by HVPE on patterned Substrates
  O. Parillaud, V. Wagner, H. J. Buehlmann, Marc ILEGEMS .

• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
  R. Zhang, L. Zhang, D.M. Hansen, Marek P. Boleslawski, K.L. Chen, D.Q. Lu, B. Shen, Y.D. Zheng, T.F. Kuech.

• Structural Properties of Laterally Overgrown GaN
  Rong Zhang, Y. Shi, Y. G. Zhou, B. Shen, Y. D. Zheng, T. S. Kuan, S. Gu, L. Zhang, D. M. Hansen, T. F. Kuech.

• AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy
  Andrey E Nikolaev, Irina Nikitina, Andrey Zubrilov, Marina Mynbaeva, Yuriy Melnik, Vladimir Dmitriev.

• Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
  T. Paskova, E.B. Svedberg, L.D. Madsen, R. Yakimova, I.G. Ivanov, A. Henry, B. Monemar.

• Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy
  Kyoyeol Lee, Keunho Auh.

• HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire Substrates
  Olivier Parillaud, Volker Wagner, Hans-Jörg Bühlmann, François Lelarge, Marc Ilegems.

• The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GaN
  S. Gu, Rong Zhang, Jingxi Sun, Ling Zhang, Thomas F. Kuech.

• Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Using Tungsten Mask
  Yasutoshi Kawaguchi, Shingo Nambu, Hiroki Sone, Masahito Yamaguchi, Hideto Miyake, Kazumasa Hiramatsu, Nobuhiko Sawaki, Yasushi Iyechika, Takayoshi Maeda.

• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
  Tanya Milkova Paskova, S. Tungasmita, E Valcheva, E. Svedberg, B. Arnaudov, S. Evtimova, P. Persson, A. Henry, R. Beccard, M. Heuken, B. Monemar.

hydride vapor phase epitaxy

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.

• Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
  B.J. Skromme.

• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
  R. Zhang, L. Zhang, D.M. Hansen, Marek P. Boleslawski, K.L. Chen, D.Q. Lu, B. Shen, Y.D. Zheng, T.F. Kuech.

hydrogen

• Electrical Characterization of MOVPE-Grown p-Type GaN:Mg Against Annealing Temperature
  Shizuo Fujita, Mitsuru Funato, Doo-Cheol Park, Yoshifumi Ikenaga, Shigeo Fujita.

• Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via MOVPE
  Kazuyuki Tadatomo, Yoichiro Ohuchi, Hiroaki Okagawa, Hirotaka Itoh, Hideto Miyake, Kazumasa Hiramatsu.

• The Behavior of Ion-Implanted Hydrogen in Gallium Nitride
  S.M. Myers, T.J. Headley, C.R. Hills, J. Han, G.A. Petersen, C.H. Seager, W.R. Wampler.

• Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium
  W.R. Wampler, S.M. Myers.

• Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
  Samuel M. Myers, Alan F. Wright, Gary A. Petersen, Carlton H. Seager, Mary H. Crawford, W. R. Wampler, Jung Han.

• Enhanced GaN Decomposition At MOVPE Pressures
  D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, R.J. Gorman.

• Spectroscopy of Proton Implanted GaN
  M.G. Weinstein, M. Stavola, C.Y. Song, C. Bozdog, H. Przbylinski, G.D. Watkins, S.J. Pearton, R.G. Wilson.

• GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium
  Michael E. Bartram, J. Randall Creighton.

• Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN
  William R Wampler, John C Barbour, Carl H Seager, Samuel M Myers, Alan F Wright, Jung Han.

hydrostatic pressure

• Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects
  I. Gorczyca, A. Svane, N. E. Christensen.

Hyperfine

• Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
  K. Lorenz, R. Vianden, S.J. Pearton, Cammy R. Abernathy , J.M. Zavada.

  The keywords used in this indexing have been supplied by the authors.

  ---

  Keywords starting with 0 | 2 | 3 | 6 | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z |

  Search Keyword Index Author Index

  Volumes 1, 2, 3, 4, 5, 6 More Info Calendar News Links

  Registration Masthead Sponsors Stats

  
  Index last updated Tuesday, January 18, 2005 7:47:58 PM.
  © 2005 The Materials Research Society