MIJ-NSR Keyword Index, Keywords starting with G

g-factors

• Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
  T.A. Kennedy, E.R. Glaser, W.E. Carlos, P.P. Ruden, Shuji Nakamura.

Ga

• GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium
  Michael E. Bartram, J. Randall Creighton.

Ga desorption

• Enhanced GaN Decomposition At MOVPE Pressures
  D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, R.J. Gorman.

Ga droplet formation

• Enhanced GaN Decomposition At MOVPE Pressures
  D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, R.J. Gorman.

GaAsN

• Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
  J. Sik, M. Schubert, T. Hofmann, V. Gottschalch.

GaAsN quantum wells

• Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine
  Torsten K. Schmidtling, M. Klein, U. W. Pohl, W. Richter.

gain

• Gain Spectroscopy of HVPE-Grown GaN
  L. Eckey, J.-Chr. Holst, A. Hoffmann, I. Broser, T. Detchprohm, K. Hiramatsu.

• Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
  Axel Kaschner, Jens Holst, Ulrich von Gfug, Axel Hoffmann, Frank Bertram, Till Riemann, Dirk Rudloff, Peter Fischer, Jürgen Christen, Robert Averbeck, Henning Riechert.

• Mechanisms of Optical Gain in Cubic GaN and InGaN
  J. Holst, A. Hoffmann, I. Broser, T. Frey, B. Schottker, D.J. As, D. Schikora, K. Lischka.

• Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
  T.J. Schmidt, S. Bidnyk, Yong-Hoon Cho, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars.

GaInN

• Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
  Jin Seo Im, H. Kollmer, O. Gfrorer, J. Off, F. Scholz, A. Hangleiter.

• On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  Christian Wetzel, Shugo Nitta, Tetsuya Takeuchi, Shigeo Yamaguchi, H. Amano, I. Akasaki.

• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  A. Sohmer, J. Off, H. Bolay, V. Härle, V. Syganow, Jin Seo Im, V. Wagner, F. Adler, Andreas Hangleiter , A. Dörnen, Ferdinand Scholz, D. Brunner, O. Ambacher, H. Lakner.

• Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
  C. Wetzel, T. Takeuchi, H. Amano, I. Akasaki.

GaInNAs

• Electronic Properties of Ga(In)NAs Alloys
  I. A. Buyanova, W. M. Chen, B. Monemar.

gallium nitride (GaN)

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober.

gallium nitride or GaN

• Electrical Measurements in GaN: Point Defects and Dislocations
  David C Look, Zhaoqiang Fang, Laura Polenta.

• Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
  Hartmut P. Witte, Andre Andre, Marko Lisker, Dirk Rudloff, Juergen Christen, Alois Krost, Martin Stutzmann, F. Scholz.

• AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties
  Edwin L Piner, David M Keogh, Jeff S Flynn, Joan M Redwing.

• A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaN
  Jung-Min Hwang, J. T. Hsieh, Huey-Liang Hwang, Wei-Hsu Hung.

• High Temperature Hardness of Bulk Single Crystal GaN
  Ichiro Yonenaga, Tetsuya Hoshi, Akira Usui.

• Characteristics of Ti/Pt/Au Ohmic Contacts on p-Type GaN/A1xGA1-xN Superlattices
  Ling Zhou, Farid Khan, A. T. Ping, A. Osinski, I. Adesida.

• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
  P. Chen, Rong Zhang, X. F. Xu, Pen Chen, Y. G. Zhou, S. Y. Xie, Y. Shi, B. Shen, S. L. Gu, Z. C. Huang, J. Hu, Y. D. Zheng.

• Emission at 247 nm from GaN Quantum Wells Grown by MOCVD
  Takao Someya, Katsuyuki Hoshino, Janet C. Harris, Koichi Tachibana, Satoshi Kako, Yasuhiko Arakawa.

• Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes
  Arno Stötzler, Ralf Weissenborn, Manfred Deicher.

• Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope
  Doru I Florescu, V A Asnin, L G Mourokh, Fred H Pollak, R J Molnar.

• Wet Etching of Ion-Implanted GaN Crystals by AZ-400K Photoresist
  Carmine A Carosella, Bela Molnar, Stefanie Schiestel, James A Sprague.

• Fabrication and Characterization of GaN Junction Field Effect Transistors
  Lei Zhang, Luke F. Lester, Albert G. Baca, Randy J. Shul, Ping C. Chang, Christi G. Willison, Umesh K. Mishra, Steve P. Denbaars, John C. Zolper.

• Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structure
  Gerard Dang, Xian An Cao, Fan Ren, Stephen J. Pearton, J. Han, A. G. Baca, R. J. Shul, R. G. Wilson.

• Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
  Uwe H Hommerich, J. T. Seo, J. D. MacKenzie, C. R. Abernathy, R. Birkhahn, A. J. Steckl, J. M. Zavada.

• Efficient Acceptor Activation in Al_xGa_1-xN/GaN Doped Superlattices
  Ian D Goepfert, E. F. Schubert, Andrei Osinsky, Peter E. Norris.

• Structural and Electronic Properties of Line Defects in GaN
  Joachim Elsner, Alexander Blumenau, Thomas Frauenheim, Robert Jones, Malcolm I Heggie.

• Photoluminescence and Cathodoluminescence of GaN Doped With Pr
  Henryk J. Lozykowski, Wojciech Jadwisienczak, I. Brown.

• Thermal Expansion of GaN at Low Temperatures - A Comparison of Bulk and Homo- and Heteroepitaxial Layers
  Verena Kirchner, Heidrun Heinke, Sven Einfeldt, Detlef Hommel, Jaroslaw Z Domagala, Michal Leszczynski.

• The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/sapphire Templates
  Alexander P. Young, Leonard J. Brillson, Yoshiki Naoi, Charles W. Tu.

• The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
  Mourad Benamara, zuzanna Liliental-Weber, J. H. Mazur, W. Swider, J. Washburn, M. Iwaya, I. Akasaki, H. Amano.

• Activation of Beryllium-Implanted GaN by Two-Step Annealing
  Yuejun Sun, Leng Seow Tan, Soo-jin Chua, Savarimuthu Prakash.

• Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy
  R. Y. Korotkov, B. W. Wessels.

• Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
  Michael Wraback, H. Shen, C. J. Eiting, J. C. Carrano, R. D. Dupuis.

• Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
  Ivan Tiginyanu, I. V. Kravetsky, D. Pavlidis, A. Eisenbach, R. Hildebrandt, G. Marowsky, H. L. Hartnagel.

• Prism Coupling as a Non-Destructive Tool for Optical Characterization of (Al,Ga) Nitride Compounds
  El Hadj Dogheche, Brahim Belgacem, Denis Remiens, Pierre Ruterana, Franck OMNES.

• The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films
  Martin Kuball, J.M. Hayes, T. Suski, J. Jun, H. H. Tan, J. S. Williams, C. Jagadish.

• High-Temperature Reliability of GaN Electronic Devices
  Seikoh Yoshida, Joe Suzuki.

• Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al_xGa_1-xN Layers Grown by MOCVD
  J. H. Mazur, Mourad Benamara, Z. Liliental-Weber, W. Swider, J. Washburn, C. J. Eiting, R. D. Dupuis.

• Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD
  A. R.A. Zauner, J. J. Schermer, W. J.P. van Enckevort, V. Kirilyuk, J. L. Weyher, I. Grzegory, P. R. Hageman, P. K. Larsen.

• Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
  Adrian Hierro, D. Kwon, S. A. Ringel, M. Hansen, U. K. Mishra, S. P. DenBaars, J. S. Speck.

• Surface Activity of Magnesium During GaN Molecular Beam Epitaxial Growth
  Vidhya Ramachandran, Randall M Feenstra, John E. Northrup, David W. Greve.

• The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride
  Pierre Ruterana, Gerard Nouet Nouet, Thomas Kehagias, Philomela Komninou, Theodoros Karakostas, Marie Antoinette di Forte Poisson, Frederik Huet.

• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
  Sergey A. Nikishin, Nikolai N Faleev, Vladimir G. Antipov, Sebastien Francoeur, Luis Grave de Peralta, George A. Seryogin, Mark Holtz, Tat'yana I. Prokofyeva, George Chu, Andrei S. Zubrilov, Vyacheslav A. Elyukhin, Irina P. Nikitina, Andrei Nikolaev, Yuriy Melnik, Vladimir Dmitriev, Henryk Temkin.

• Optical Activation Behavior of Ion Implanted Acceptor Species in GaN
  B. J.. Skromme, G. L. Martinez.

• Structural Evolution of GaN During Initial Stage MOCVD Growth
  Chong Cook Kim, Jung Ho Je, Min-Su Yi.

• High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer
  M. J. Jurkovic, L. K. Li, B. Turk, W. I. Wang, S. Syed, D. Simonian, H. L. Stormer.

• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
  Z. Chen, R. Zhang, J. Zhu, B. Shen, Y. Zhou, P. Chen, W. Li, Y. Shi, S. Gu, Y. D. Zheng.

• Metal/GaN Contacts Studied by Electron Spectroscopies
  Jacques Dumont, Roland Caudano, Robert Sporken, Eva Monroy, Elias Munoz, Bernard Beaumont, Pierre Gibart.

• A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire Substrates
  Anand V Sampath, Mira Misra, K. Seth, Y. Fedyunin, H. M. Ng, E. Iliopoulos, Z. Feit, Theodore Moustakas.

• GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
  Vitaly A. Sukhoveyev, Vladimir A. Ivantsov, Irina P. Nikitina, Alexandr I. Babanin, A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, M. G. Mil'vidskii, Vladimir Dmitriev.

• New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors
  John D. Albrecht, P. Paul Ruden, Mario G. Ancona.

• Mg Segregation, Difficulties of P-Doping in GaN
  Zuzanna Liliental-Weber, Mourad Benamara, W. Swider, J. Washburn, I. Grzegory, S. Porowski, R. D. Dupuis, Brian J. Eiting.

• MBE Growth Of GaN Films In Presence Of Surfactants: The Effect Of Mg And Si
  Guido Mula, Bruno Daudin, Christoph Adelmann, Philippe Peyla.

• Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs
  Maziar Farahmand, Kevin Brennan.

• Correlation Between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity In AlGaN/GaN Modulation Doped Heterostructures
  Jizhong Li, Jing Li, Jingyu Lin, Hongxing Jiang.

• Evidence from EELS of Oxygen in the Nucleation Layer of an MBE Grown III-N HEMT
  Tyler J. Eustis, John Silcox, Michael J Murphy, William J Schaff.

• A Thermodynamic Approach to Ohmic Contact Formation to p-GaN
  Bo Liu, Mikko H. Ahonen, Paul H. Holloway.

• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
  W. P. Li, R. Zhang, J. Yin, X. H. Liu, Y. G. Zhou, B. Shen, P. Chen, Z. Z. Chen, Y. Shi, R. L. Jiang, Z. G. Liu, Y. D. Zheng, Z. C. Huang.

• Surface Morphology of GaN: Flat Versus Vicinal Surfaces
  Maohai Xie, Sean M. Seutter, Lianxi Zheng, Sauha Cheung, YeeFai Ng, Huasheng Wu, Shuk Yin Tong.

• Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN
  William R Wampler, John C Barbour, Carl H Seager, Samuel M Myers, Alan F Wright, Jung Han.

• Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
  Samuel M. Myers, Alan F. Wright, Gary A. Petersen, Carlton H. Seager, Mary H. Crawford, W. R. Wampler, Jung Han.

• Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors
  Roland A. Fischer, Andreas Wohlfart, Anjana Devi, Wolfram Rogge.

• Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
  Lijie Zhao, Hughes Marchand, Paul Fini, Steven Denbaars, Umesh Mishra, Jim Speck.

• Visible and Infrared Emission of GaN:Er Thin Films Grown by Sputtering
  Hong Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, H. J. Lozykowski.

• Integration of PLZT and BST Family Oxides with GaN
  Andrei V Osinsky, V. N. Fuflyigin, F. Wang, P. I. Vakhutinsky, P. E. Norris.

• Structural Properties of Laterally Overgrown GaN
  Rong Zhang, Y. Shi, Y. G. Zhou, B. Shen, Y. D. Zheng, T. S. Kuan, S. Gu, L. Zhang, D. M. Hansen, T. F. Kuech.

• The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GaN
  S. Gu, Rong Zhang, Jingxi Sun, Ling Zhang, Thomas F. Kuech.

• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
  Tanya Milkova Paskova, S. Tungasmita, E Valcheva, E. Svedberg, B. Arnaudov, S. Evtimova, P. Persson, A. Henry, R. Beccard, M. Heuken, B. Monemar.

• Dislocation Arrangement in a Thick LEO GaN Film on Sapphire
  Kathleen A Dunn, Sue Babcock, Donald S Stone, Richard J Matyi, Ling Zhang, Thomas F. Kuech.

• Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy
  T. S. Kuan, C. K. Inoki, Y. Hsu, D. L. Harris, R. Zhang, S. Gu, T. F. Kuech.

• HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire Substrates
  Olivier Parillaud, Volker Wagner, Hans-Jörg Bühlmann, François Lelarge, Marc Ilegems.

• Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
  Hideto Miyake, Motoo Yamaguchi, Masahiro Haino, Atsushi Motogaito, Kazumasa Hiramatsu, Shingo Nambu, Yasutoshi Kawaguchi, Nobuhiko Sawaki, Yasushi Iyechika, Takayoshi Maeda, Isamu Akasaki.

Gallium Nitrides

• Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
  O.P. Seifert, O. Kirfel, M. Munzel, M.T. Hirsch, J. Parisi, M. Kelly, O. Ambacher.

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  E. Kim, I. Berichev, A. Bensaoula, A. Schultz, K. Waters, W. Zagozdzon-Wosik.

GaN and InN

• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
  Hyun Cho, J. Hong, T. Maeda, S.M. Donovan, J. Devin MacKenzie , Cammy R. Abernathy , S.J. Pearton, R. J. Shul, J. Han.

GaN carbon PL photoluminescence PLE excitation yellow red gallium nitride

• Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium Nitride
  E.E. Reuter, R. Zhang, T.F. Kuech, S.G. Bishop.

GaN decomposition

• Enhanced GaN Decomposition At MOVPE Pressures
  D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, R.J. Gorman.

GaN defect structure

• Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaN
  M. Toth, K. Fleischer, M.R. Phillips.

GaN doping p-type defects

• Novel Defect Complexes and Their Role in p-Type Doping of GaN
  Fernando A. Reboredo, Sokrates T. Pantelides.

GaN pyramids

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.

GaN synthesis

• Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
  M. Callahan, M. Harris, M. Suscavage, D. Bliss, J. Bailey.

GaN(0001)

• GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium
  Michael E. Bartram, J. Randall Creighton.

GaN, biexciton, electron-hole-plasma, high-excitation, gain

• Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
  J.-Chr. Holst, L. Eckey, A. Hoffmann, I. Broser, H. Amano, I. Akasaki.

GaN, MOCVD, capillary epitaxy

• Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique
  A. N. Buzynin, V. V. Osiko, Yu. N. Buzynin, B. Pushnyi.

GaN, Molecular Beam Epitaxy

• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
  M. A. Sánchez-García, F. J. Sánchez, F. B. Naranjo, F. Calle, E. Calleja, E. Muñoz, U. Jahn, K. H. Ploog.

GaN-AlN-superlattice

• Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman Spectroscopy
  Mathias M Schubert, Alexander Kasic, Tomas E Tiwald, John A Woollam, Volker Haerle, Ferdinand Scholz.

GaN/AlGaN

• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  Fan Ren , Cammy R. Abernathy , J. M. Van Hove, P. P. Chow, R. Hickman, J. J. Klaassen, R. F. Kopf, Hyun Cho, K. B. Jung, J. R. La Roche, R. G. Wilson, J. Han, R. J. Shul, A. G. Baca, S.J. Pearton.

GaN/AlGaN MQWs

• Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence
  H.S. Kim, J.Y. Lin, H.X. Jiang, W.W. Chow, A. Botchkarev, H. Morkoc.

GaN/AlGaN QWs

• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
  Nicolas Grandjean, Jean Massies, Mathieu Leroux, Marguerite Laugt, Pierre Lefebvre, Bernard Gil, Jacques Allegre, Pierre Bigenwald.

GaN:Mg

• On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation
  F.Shahedipour, B.W.Wessels.

GaNAs

• Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
  M. Gherasimova, B. Gaffey, P. Mitev, L.J. Guido, K.L. Chang, K.C. Hsieh, S. Mitha, J. Spear.

• Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy
  Tae-Yeon Seong, In-Tae Bae, Y. Zhao, C.W. Tu.

• Electronic Properties of Ga(In)NAs Alloys
  I. A. Buyanova, W. M. Chen, B. Monemar.

• Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor Deposition
  Seikoh Yoshida, T. Kimura, J. Wu, J. Kikawa, K. Onabe, Y. Shiraki.

GaNP

• Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy
  Tae-Yeon Seong, In-Tae Bae, Y. Zhao, C.W. Tu.

gas chromatography-mass spectroscopy

• Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy
  Michael E. Bartram.

GCMS

• Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy
  Michael E. Bartram.

Grain size

• Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications
  Jae-Hoon Lee, Myoung-Bok Lee, Sung-Ho Hahm, Yong-Hyun Lee, Jung-Hee Lee, Young- Ho Bae, Hyun Kyung Cho.

• Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
  Gon Namkoong, W. Alan Doolittle, Sangbeom Kang, Huang Sa, April S. Brown, Stuart R. Stock .

group III-nitrides

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
  T. Zywietz, Jörg Neugebauer, M. Scheffler, J. Northrup, Chris G. Van de Walle .

group-III nitrides

• Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
  R.J. Shul, L. Zhang, C.G. Willison, J. Han, S.J. Pearton, J. Hong, C.R. Abernathy, L.F. Lester.

growth

• Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates
  Robert F. Davis, Thomas Gehrke, Kevin J. Linthicum, Tsvetanka S. Zheleva, Pradeep Rajagopal, Christian A. Zorman, Mehran Mehregany.

• Growth of Oriented Thick Films of Gallium Nitride From the Melt
  Jeffrey S. Dyck, Kathleen Kash, Michael T. Grossner, Cliff C. Hayman, Alberto Argoitia, Nan Yang, Moon-Hi Hong, Martin E. Kordesch.

• Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE
  E.C. Piquette, P.M. Bridger, R.A. Beach, T.C. McGill.

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
  T. Zywietz, Jörg Neugebauer, M. Scheffler, J. Northrup, Chris G. Van de Walle .

growth chemistry

• Gallium Nitride Growth Using Diethylgallium Chloride As An Alternative Gallium Source
  Ling Zhang, Rong Zhang, Marek P. Boleslawski, T.F. Kuech.

Growth defects

• Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC
  Philippe Vermaut , P. Ruterana, G. Nouet, A. Salvador, H. Morkoç.

growth kinetics

• A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the In Incorporation Efficiency in InxGa1-x/GaN Heterostructures Grown by RF Plasma-Assisted Molecular Beam Epitaxy
  Mark L. O'Steen, F. Fedler, R. J. Hauenstein.

• Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
  Michael E. Coltrin, Christine C. Willan, Michael E. Bartram, Jung Han, Nancy Missert, Mary H. Crawford, Albert G. Baca.

• Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
  M. V. Averyanova, S. Yu. Karpov, Yu. N. Makarov, I. N. Przhevalskii, M. S. Ramm, R. A. Talalaev.

• Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors
  Roland A. Fischer, Andreas Wohlfart, Anjana Devi, Wolfram Rogge.

• Growth Rate Reduction of GaN Due to Ga Surface Accumulation
  Devin Crawford, Ruediger Held, A. M. Johnston, A. M. Dabiran, Philip I. Cohen .

growth mechanisms

• Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
  Michael E. Coltrin, Christine C. Willan, Michael E. Bartram, Jung Han, Nancy Missert, Mary H. Crawford, Albert G. Baca.

Growth Mode and

• Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates
  Lianghong Liu, B. Liu, Y. Shi, J.H. Edgar.

growth rate

• The role of gaseous species in group-III nitride growth
  S. Yu. Karpov, Yu. N. Makarov, M. S. Ramm.

• GaN Decomposition in Ammonia
  Daniel D Koleske, Alma E. Wickenden, Richard L. Henry.

• Novel approach to simulation of group-III nitrides growth by MOVPE
  S. Yu. Karpov, V. G. Prokofyev, E. V. Yakovlev, R. A. Talalaev, Yu. N. Makarov.

GSMBE

• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
  Sergey A. Nikishin, Nikolai N Faleev, Vladimir G. Antipov, Sebastien Francoeur, Luis Grave de Peralta, George A. Seryogin, Mark Holtz, Tat'yana I. Prokofyeva, George Chu, Andrei S. Zubrilov, Vyacheslav A. Elyukhin, Irina P. Nikitina, Andrei Nikolaev, Yuriy Melnik, Vladimir Dmitriev, Henryk Temkin.

  The keywords used in this indexing have been supplied by the authors.

  ---

  Keywords starting with 0 | 2 | 3 | 6 | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z |

  Search Keyword Index Author Index

  Volumes 1, 2, 3, 4, 5, 6 More Info Calendar News Links

  Registration Masthead Sponsors Stats

  
  Index last updated Tuesday, January 18, 2005 7:47:56 PM.
  © 2005 The Materials Research Society