MIJ-NSR Keyword Index, Keywords starting with F

facet

• Mass Transport, Faceting and Behavior of Dislocations in GaN
  Shugo Nitta, Takayuki Kashima, Michihiko Kariya, Yohei Yukawa, Shigeo Yamaguchi, Hiroshi Amano, Isamu Akasaki.

• Fabrication of Smooth GaN-Based Laser Facets
  D.A. Stocker, E.F. Schubert, K.S. Boutros, J.M. Redwing.

faults

• Formation and Stability of the Prismatic Stacking Fault in Wurtzite (Al,Ga,In) Nitrides
  Pierre Ruterana, Antoine Bere, Gerard Nouet.

ferroelectrics

• Integration of PLZT and BST Family Oxides with GaN
  Andrei V Osinsky, V. N. Fuflyigin, F. Wang, P. I. Vakhutinsky, P. E. Norris.

FET

• Research on GaN MODFET's
  L. Eastman, J. Burm, W. Schaff, M. Murphy, K. Chu, H. Amano, I. Akasaki.

• Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
  P.P. Ruden, J.D. Albrecht, A. Sutandi, S.C. Binari, K. Ikossi-Anastasiou, M.G. Ancona, R.L. Henry, D.D. Koleske, A.E. Wickenden.

field

• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
  J. Dalfors, J. P. Bergman, P.O. Holtz, B. Monemar, H. Amano, I. Akasaki.

• Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
  Atsuhiro Kinoshita, H. Hirayama, P. Riblet, M. Ainoya, A. Hirata, Y. Aoyagi.

field effect transistor

• High-Temperature Reliability of GaN Electronic Devices
  Seikoh Yoshida, Joe Suzuki.

• Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors
  Narihiko Maeda, Tadashi Saitoh, Kotaro Tsubaki, Toshio Nishida, Naoki Kobayashi.

films

• Optical Properties of Manganese Doped Amorphous and Crystalline Aluminum Nitride Films
  Meghan L Caldwell, Hugh H Richardson, M. E. Kordesch.

• Integration of PLZT and BST Family Oxides with GaN
  Andrei V Osinsky, V. N. Fuflyigin, F. Wang, P. I. Vakhutinsky, P. E. Norris.

• Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
  R. D. Vispute, A. Patel, K. Baynes, B. Ming, R. P. Sharma, T. Venkatesan, C. J. Scozzie, A. Lelis, T. Zheleva, K. A. Jones.

Finite element model

• Thermal Residual Stress Modeling in AlN and GaN Multilayer Samples
  Kai Wang, Robert R. Reeber.

First Principles

• Bandgap Variation at the Isostructural Phase Transformation of Wurtzite InN
  L. Bellaiche, K. Kunc, M. Besson.

Flicker noise

• Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions
  W.Y. Ho, W.K. Fong, Charles Surya, K.Y. Tong, L.W. Lu, W.K. Ge.

• Characterization of Flicker Noise in GaN Based Modfets At Low Drain Bias
  W.Y. Ho, W.K. Fong, C. Surya, K.Y. Tong, W. Kim, A. Botcharev, H. Morkoc.

fluctuations

• Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  B. Monemar, J.P. Bergman, J. Dalfors, G. Pozina, B.E. Sernelius, P.O. Holtz, H. Amano, I. Akasaki.

Focused Ion Beam

• Focused Ion Beam Micromachining of GaN Photonic Devices
  Irving Chyr, A.J. Steckl.

focused ion beam etching

• Focused Ion Beam Etching of GaN
  C. Flierl, I.H. White, M. Kuball, P.J. Heard, G.C. Allen, C. Marinelli, J.M. Rorison, R.V. Penty, Y. Chen, S.Y. Wang.

• Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and Their Optical Characterization by Micro-Photoluminescence/Raman Mapping
  Martin Kuball, M. Benyoucef, F. H. Morrissey, C. T. Foxon.

force microscopy

• Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  L.-L. Chao, G. S. Cargill III, C. Kothandaraman, D. Cyr, G. Flynn, E. S. Hellman, D. Wiesmann, D. N. E. Buchanan, I. Brener.

formation mechanism

• Formation and Stability of the Prismatic Stacking Fault in Wurtzite (Al,Ga,In) Nitrides
  Pierre Ruterana, Antoine Bere, Gerard Nouet.

four wave mixing

• Transient four wave mixing experiments on GaN
  R. Zimmermann, M. Hofmann, D. Weber, J. Möbius, A. Euteneuer, W. W. Rühle, E. O. Göbel, B.K. Meyer, H. Amano, I. Akasaki.

four-wave mixing

• Optical nonlinearities of Gallium Nitride
  H. Haag, P. Gilliot, D. Ohlmann, R. Levy, Olivier Briot, Roger-Louis Aulombard.

Franz-Keldysh effect

• On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  Christian Wetzel, Shugo Nitta, Tetsuya Takeuchi, Shigeo Yamaguchi, H. Amano, I. Akasaki.

• Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
  C. Wetzel, T. Takeuchi, H. Amano, I. Akasaki.

free

• Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
  J. Sik, M. Schubert, T. Hofmann, V. Gottschalch.

free carriers

• Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
  M. Schubert, A. Kasic, T.E. Tiwald, J. Off, B. Kuhn, Ferdinand Scholz.

free evaporation

• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  A. N. Alexeev, B. A. Borisov, V. P. Chaly, D. M. Demidov, A. L. Dudin, D. M. Krasovitsky, Yu. V. Pogorelsky, A. P. Shkurko, I. A. Sokolov, M. V. Stepanov, A. L. Ter-Martirosyan.

free excitons

• Free excitons in strained MOCVD-grown GaN layers
  N.N. Syrbu, I.M. Tiginyanu, V.V. Ursaki, V.V. Zalamai, Veaceslav Popa , S.M. Hubbard, Dimitris Pavlidis.

  The keywords used in this indexing have been supplied by the authors.

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  Index last updated Tuesday, January 18, 2005 7:47:53 PM.
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