MIJ-NSR Keyword Index, E

MIJ-NSR Keyword Index, Keywords starting with E

ECR

ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
Bedwyr Humphreys, Matthew Govett.

edge energy

GaN Nanotubes
Seung Mi Lee, Young Hee Lee, Yong Gyoo Hwang, J. Elsner, Dirk Porezag, Thomas Frauenheim.

edge termination

Processing And Device Performance Of GaN Power Rectifiers
A.P. Zhang, G.T. Dang, X.A. Cao, H. Cho, F. Ren, J. Han, J.-I. Chyi, C.-M. Lee, T.-E. Nee, G.-C. Chi, C.-C. Chuo, S.N.G. Chu, R.G. Wilson, S. J. Pearton.

EELS

Evidence from EELS of Oxygen in the Nucleation Layer of an MBE Grown III-N HEMT
Tyler J. Eustis, John Silcox, Michael J Murphy, William J Schaff.

effect

Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
B. Monemar, J. P. Bergman, J. Dalfors, G. Pozina, B.E. Sernelius, P.O. Holtz, H. Amano, I. Akasaki.

effective bandgap inhomogeneity

Spectroscopic Studies in InGaN Quantum Wells
S.F. Chichibu, T. Sota, K. Wada, S.P. DenBaars, S. Nakamura.

effective mass

Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
M. Schubert, A. Kasic, T.E. Tiwald, J. Off, B. Kuhn, Ferdinand Scholz.
Electronic Properties of Ga(In)NAs Alloys
I. A. Buyanova, W. M. Chen, B. Monemar.

efficiency

Optical Spectroscopy of InGaN Epilayers in the Low Indium Composition Regime
Mary H. Crawford, Jung Han, Michael A. Banas, Samuel M. Myers, Gary A. Petersen, Jeffrey J. Figiel.

Elastic Constants, Temperature Dependence, Corresponding States

High Temperature Elastic Constant Prediction of Some Group III-Nitrides
Robert R. Reeber, Kai Wang.

elective etching

Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
Tsvetanka S. Zheleva, Scott A. Smith, Darren B. Thomson, Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Eric Carlson, Waeil M. Ashmawi, Robert F. Davis.

electric field

Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures
Christian M Wetzel, Tetsuya Takeuchi, Hiroshi Amano, Isamu Akasaki.
On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
Christian Wetzel, Shugo Nitta, Tetsuya Takeuchi, Shigeo Yamaguchi, H. Amano, I. Akasaki.
Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
Nicolas Grandjean, Jean Massies, Mathieu Leroux, Marguerite Laugt, Pierre Lefebvre, Bernard Gil, Jacques Allegre, Pierre Bigenwald.

electric field in quantum wells

Spectroscopic Studies in InGaN Quantum Wells
S.F. Chichibu, T. Sota, K. Wada, S.P. DenBaars, S. Nakamura.

Electrical

Metal Contacts on -GaN
T. U. Kampen, W. Mönch.
Temperature Effect on the Quality of AlN Thin Films
Margarita P. Thompson, Andrew R. Drews, Changhe Huang, Gregory W. Auner.

electrical properties

Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature
J.R.L. Fernandez, V.A. Chitta, Eduardo Abramof, A. Ferreira da Silva, J.R. Leite, A. Tabata, D.J. As, T. Frey, D. Schikora, K. Lischka.

electrically injected

Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
Daniel Hofstetter, Robert L. Thornton, Linda T. Romano, David P. Bour, Michael Kneissl, Rose M. Donaldson, Clarence Dunnrowicz.

electroluminescence

Optical Properties of Nitride-based Structures Grown on 6H-SiC
D.V. Tsvetkov, A.S. Zubrilov, V. I. Nikolaev, V Soloviev, V.A. Dmitriev.
p-doping of GaN by MOVPE
S. Haffouz, B. Beaumont, M. Leroux, M. Laugt, P. Lorenzini, Pierre Gibart , L.G.Hubert-Pfalzgraf.
Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium-Doped GaN
M. Garter, R. Birkhahn, A.J. Steckl, J. Scofield.
Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
Veit Schwegler, M. Seyboth, C. Kirchner, M. Scherer, M. Kamp, P. Fischer, J. Christen, M. Zacharias.
Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions
W.Y. Ho, W.K. Fong, Charles Surya, K.Y. Tong, L.W. Lu, W.K. Ge.

electron beam pumped laser

Electron Beam Pumped MQW InGaN/GaN Laser
V.I. Kozlovsky, A.B. Krysa, Y.K. Skyasyrsky, Y.M. Popov, A. Abare, M.P. Mack, S. Keller, U. K. Mishra, L. Coldren, Steven DenBaars , Michael D. Tiberi , T. George.

electron beam pumping

Electron Beam Pumping in Nitride Vertical Cavities With GaN/A10.25Ga0.75 Bragg Reflectors
Harald Klausing, Jochen Aderhold, Fritz Fedler, David Mistele, Jens Stemmer, Olga Semchinova, JŸrgen Graul, JŸrgen DŠnhardt, Siegfried Panzer.

Electron cyclotron resonance

Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy
M. Meyyappan.

electron microscopy

Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober.

electron overflow

Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
Kay Domen , Reiko Soejima, Akito Kuramata , Toshiyuki Tanahashi.

electron-irradiation

Optical properties of electron-irradiated GaN
I. A. Buyanova, Mt. Wagner, W. M. Chen, L. Lindström, B. Monemar, H. Amano, I. Akasaki.

electronic Raman scattering

Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
B.J. Skromme.

electronic structure

Core-Level Photoemission From Stoichiometric GaN(0001)-1x1
S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, M. Oshima.

electroreflection

Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
C. Wetzel, T. Takeuchi, H. Amano, I. Akasaki.

ellipsometry

Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
J. Sik, M. Schubert, T. Hofmann, V. Gottschalch.
GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry
M. Losurdo, P. Capezzuto, G. Bruno.
Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
M. Schubert, A. Kasic, T.E. Tiwald, J. Off, B. Kuhn, Ferdinand Scholz.
Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman Spectroscopy
Mathias M Schubert, Alexander Kasic, Tomas E Tiwald, John A Woollam, Volker Haerle, Ferdinand Scholz.

ELO

Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
Michael E. Coltrin, Christine C. Willan, Michael E. Bartram, Jung Han, Nancy Missert, Mary H. Crawford, Albert G. Baca.
GaN: From Selective Area Epitaxy To Epitaxial Lateral Overgrowth
X. Li, S.G. Bishop, J.J. Coleman.
Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
Zhonghai Yu, M.A.L. Johnson, J.D. Brown, N.A. El-Masry, J.F. Muth, J.W. Cook, Jr., J.F. Schetzina, K.W. Haberern, H.S. Kong, J.A. Edmond.
Structural Properties of Laterally Overgrown GaN
Rong Zhang, Y. Shi, Y. G. Zhou, B. Shen, Y. D. Zheng, T. S. Kuan, S. Gu, L. Zhang, D. M. Hansen, T. F. Kuech.

ELOG

Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
S. Haffouz, B. Beaumont, Pierre Gibart .

emission

Optical Properties of AlGaN Quantum Well Structures
Hideki Hirayama, Yasushi Enomoto, Atsuhiro Kinoshita, Akira Hirata, Yoshinobu Aoyagi.

emitting diodes

Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes
Vladimir E. Kudryashov, Sergey S. Mamakin, Andrey N. Turkin, Alexander E. Yunovich, Alexei N. Kovalev, Fedor I. Manyakhin.
Time-Resolved Spectroscopy of InGaN
Milan Pophristic, Frederick H Long, C. Tran, I. T. Ferguson.

Epilayers

Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
W. Shan, J.W. Ager III, W. Walukiewicz, E.E. Haller, M.D. McCluskey, N.M. Johnson, D.P. Bour.

epitaxial lateral overgrowth

Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
Michael E. Coltrin, Christine C. Willan, Michael E. Bartram, Jung Han, Nancy Missert, Mary H. Crawford, Albert G. Baca.
Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Using Tungsten Mask
Yasutoshi Kawaguchi, Shingo Nambu, Hiroki Sone, Masahito Yamaguchi, Hideto Miyake, Kazumasa Hiramatsu, Nobuhiko Sawaki, Yasushi Iyechika, Takayoshi Maeda.
Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
E. Frayssinet, B. Beaumont, J. P. Faurie, Pierre GIBART, Zs. Makkai, B. Pécz, P. Lefebvre, P. Valvin.

epitaxial lateral overgrowth (see lateral epitaxial growth)

Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
Hideto Miyake, Motoo Yamaguchi, Masahiro Haino, Atsushi Motogaito, Kazumasa Hiramatsu, Shingo Nambu, Yasutoshi Kawaguchi, Nobuhiko Sawaki, Yasushi Iyechika, Takayoshi Maeda, Isamu Akasaki.
A TEM Study of GaN Grown by ELO on (0001) 6H-SiC
Pierre Ruterana, Bernard Beaumont, Pierre Gibart, Yu Melnik.

epitaxial overgrowth

Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
Hugues Marchand , J.P. Ibbetson, Paul T. Fini , Peter Kozodoy , S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.

Epitaxial ZnO

Properties of Epitaxial ZnO Thin Films for GaN and Related Applications
H. Shen, M. Wraback, J. Pamulapati, S. Liang, C. Gorla, Y. Lu.

epitaxy

PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
H.Angerer, O. Ambacher, R. Dimitrov, Th. Metzger, W. Rieger, M. Stutzmann.
The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GaN
S. Gu, Rong Zhang, Jingxi Sun, Ling Zhang, Thomas F. Kuech.
Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.
GaN m-i-n LED grown by MOVPE
Da-cheng Lu, Xianglin Liu, Du Wang, Xiaohui Wang, Lanying Lin.
The Morphology and Cathodoluminescence of GaN Thin Films
C. Trager-Cowan, P. G. Middleton, K. P. O'Donnell.
Modeling GaN Growth by Plasma Assisted MBE in the Presence of Low Mg Flux
Nathan Sipe, Rama Venkat.
Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
Zhonghai Yu , M.A.L. Johnson, T. Mcnulty, J.D. Brown, J.W. Cook,Jr, J.F. Schetzina.
Optical Properties of GaNAs Grown by MBE
G. Pozina, I. G. Ivanov, B. Monemar, J.V. Thordson, T.G. Andersson.
Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
B. Beaumont, M. Vaille, G. Nataf, A. Bouillé, J.-C. Guillaume, P. Vénnègues, S. Haffouz, Pierre Gibart .
GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
O. Schoen, D. Schmitz, M. Heuken, Holger Juergensen, M. D. Bremser.
Physical Properties of Bulk GaN Crystals Grown by HVPE
Yu.V. Melnik, K.V. Vassilevski, I.P. Nikitina, A.I. Babanin, V. Yu. Davydov, V.A. Dmitriev.
ScAlMgO₄: an Oxide Substrate for GaN Epitaxy

E. S. Hellman, C. D. Brandle, L. F. Schneemeyer, D. Wiesmann, I. Brener, T. Siegrist, G. W. Berkstresser, D. N. E. Buchanan, E. H. Hartford.
High-temperature structural behavior of Ni/Au Contact on GaN(0001)
Chong Cook Kim, Jong Kyu Kim, Jong-Lam Lee, Jung Ho Je, Min-Su Yi, Do Young Noh, Y. Hwu, P. Ruterana.
The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
Alan G. Thompson , M. Schurman, Z. C. Feng, R. F. Karlicek, T. Salagaj, C. A. Tran, R. A. Stall.
New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type A^IIIB^V on sapphire substrates
M.J. Kotelyanskii, I.M. Kotelyanskii, V.B. Kravchenko.
Comparison of Luminescence and Physical Morphologies of GaN Epilayers
Carol Trager-Cowan , P. G. Middleton, K. P. O'Donnell, S. Ruffenach-Clur, Olivier Briot.
Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
A. Petersson, Anders Gustafsson , L. Samuelson, Satoru Tanaka , Yoshinobu Aoyagi.
Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
R. M. Feenstra, J. E. Northrup, Jörg Neugebauer.
Comparative Growth of AlN on Singular and Off-Axis 6H and 4h-SiC by MOCVD
S. Wilson, C.S. Dickens, J. Griffin, M.G. Spencer.
Microstructure of GaN Grown on (111) Si by MOCVD
D.M. Follstaedt, J. Han, P. Provencio, J.G. Fleming.
Preparation of Sapphire for High Quality III-Nitride Growth
J. Cui, A. Sun, M. Reshichkov, F. Yun, A. Baski, H. Morkoç.
Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
Markus Kamp , M. Mayer, A. Pelzmann, K. J. Ebeling.
The Polarity of GaN: a Critical Review
E. S. Hellman.
Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
J. Allègre, P. Lefebvre, J. Camassel, B. Beaumont, Pierre Gibart .
GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
A.E. Nikolaev, Yu.V. Melnik, M.N. Blashenkov, N.I. Kuznetsov, I.P. Nikitina, A.S. Zubrilov, D.V. Tsvetkov, V. I. Nikolaev, V.A. Dmitriev, V.A. Soloviev.
Growth of Ga-face and N-face GaN films using ZnO Substrates
E. S. Hellman, D. N. E. Buchanan, D. Wiesmann, I. Brener.
High Resistivity Al_xGa_1-xN Layers Grown by MOCVD
A. Y. Polyakov, M. Shin, D. W. Greve, M. Skowronski, R. G. Wilson.
Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
C. D. Lee, R. M. Feenstra, O. Shigiltchoff, R. P. Devaty, W. J. Choyke.
Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
H. Teisseyre, G. Nowak, M. Leszczynski, I. Grzegory, M. Bockowski, S. Krukowski, S. Porowski, M. Mayer, A. Pelzmann, Markus Kamp , K. J. Ebeling, G. Karczewski.
Determination of the dislocation densities in GaN on c-oriented sapphire
A. Pelzmann, M. Mayer, C. Kirchner, D. Sowada, T. Rotter, Markus Kamp , K. J. Ebeling, S. Christiansen, M. Albrecht, H. P. Strunk, B. Holländer, S. Mantl.
Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates
Leo J Schowalter, Juan C Rojo, Nikolai Yakolev, Yuriy Shusterman, Katherine Dovidenko, Rungjun Wang, Ishwara Bhat, Glen A Slack.

EPVOM

Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
S. Haffouz, B. Beaumont, Pierre Gibart .

Er

Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy
S. Kim, X. Li, J.J. Coleman, R. Zhang, D.M. Hansen, T.F. Kuech, S.G. Bishop.
Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE
R.H. Birkhahn, R. Hudgins, D.S. Lee, B.K. Lee, A.J. Steckl, A. Saleh, R.G. Wilson, J.M. Zavada.

Erbium

RBS Lattice Site Location and Damage Recovery Studies on Er Implanted GaN
E. Alves, M.F. DaSilva, J.C. Soares, J. Bartels, R. Vianden, C.R. Abernathy, S.J. Pearton.
Photoluminescence Enhancement and Morphological Properties of Carbon Co-Doped GaN:Er
Mark Eddy Overberg, C. R. Abernathy, S. J. Pearton, R. G. Wilson, J. M. Zavada.
Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
Uwe H Hommerich, J. T. Seo, J. D. MacKenzie, C. R. Abernathy, R. Birkhahn, A. J. Steckl, J. M. Zavada.
Luminescence From Erbium-Doped Gallium Nitride Thin Films
J.M. Zavada, Myko Thaik, U. Hommerich, J.D. MacKenzie, C.R. Abernathy, F. Ren, H. Shen, J. Pamulapati, H. Jiang, J. Lin, R.G. Wilson.
Visible and Infrared Emission of GaN:Er Thin Films Grown by Sputtering
Hong Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, H. J. Lozykowski.
Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium-Doped GaN
M. Garter, R. Birkhahn, A.J. Steckl, J. Scofield.
Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitxy
U. Hommerich, J.T. Seo, Myo Thaik, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, R.G. Wilson, J.M. Zavada.
Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE
R.H. Birkhahn, R. Hudgins, D.S. Lee, B.K. Lee, A.J. Steckl, A. Saleh, R.G. Wilson, J.M. Zavada.

ESR

Paramagnetic defects in GaN
M. Palczewska, B. Suchanek, R. Dwilinski, K. Pakula, A. Wagner, M. Kaminska.

etch selectivity

Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
R.J. Shul, L. Zhang, C.G. Willison, J. Han, S.J. Pearton, J. Hong, C.R. Abernathy, L.F. Lester.
New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
Hyun Cho, J. Hong, T. Maeda, S.M. Donovan, J. Devin MacKenzie , Cammy R. Abernathy , S.J. Pearton, R. J. Shul, J. Han.
Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
Hyun Cho, Y.B. Hahn, D.C. Hays, K.B. Jung, S.M. Donovan, C.R. Abernathy, S.J. Pearton, R.J. Shul.

etching

Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
B.J. Skromme.
Fabrication of Smooth GaN-Based Laser Facets
D.A. Stocker, E.F. Schubert, K.S. Boutros, J.M. Redwing.
Dry and Wet Etching for Group III-Nitrides
I. Adesida, C. Youtsey, A. T. Ping, F. Khan, L. T. Romano, G. Bulman.
A Review of Dry Etching of GaN and Related Materials
S.J. Pearton, R. J. Shul, Fan Ren .
Wet Etching of Ion-Implanted GaN Crystals by AZ-400K Photoresist
Carmine A Carosella, Bela Molnar, Stefanie Schiestel, James A Sprague.

etching damage

Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)
H.P. Gillis, M.B. Christopher, K.P. Martin, D.A. Choutov.

etching fundamentals

Etch Processing of III-V Nitrides
C.R. Eddy, Jr..

evaporation coefficient

Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
M. V. Averyanova, S. Yu. Karpov, Yu. N. Makarov, I. N. Przhevalskii, M. S. Ramm, R. A. Talalaev.

exciton

Semiconductor microcavities: towards polariton lasers
A. Kavokin, G. Malpuech, Bernard Gil.
Temperature Dependence of Bound Exciton Emissions in GaN
D.G. Chtchekine, G.D. Gilliland, Z.C. Feng, S.J. Chua, D.J. Wolford, S.E. Ralph, M.J. Schurman, I. Ferguson.
Transient four wave mixing experiments on GaN
R. Zimmermann, M. Hofmann, D. Weber, J. Möbius, A. Euteneuer, W. W. Rühle, E. O. Göbel, B.K. Meyer, H. Amano, I. Akasaki.

exciton and carrier dynamics

Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
Michael Wraback, H. Shen, C. J. Eiting, J. C. Carrano, R. D. Dupuis.

excitonic recombination

Optical Investigations of AlGaN on GaN Epitaxial Films
G. Steude, T. Christmann, B.K. Meyer, A. Goeldner, A. Hoffmann, F. Bertram, J. Christen, H. Amano, I. Akasaki.

excitons

Radiative Lifetime of Excitons in GaInN/GaN Quantum Wells
Jin Seo Im, Volker Härle, Ferdinand Scholz, Andreas Hangleiter .
Free Excitons in GaN
B. Monemar, J. P. Bergman, I. A. Buyanova, W. Li, H. Amano, I. Akasaki.
Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
B.J. Skromme.

expansion

Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. J. Rosner, G. Girolami, Paul T. Fini , J.P. Ibbetson, S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.
Thermal Expansion of GaN at Low Temperatures - A Comparison of Bulk and Homo- and Heteroepitaxial Layers
Verena Kirchner, Heidrun Heinke, Sven Einfeldt, Detlef Hommel, Jaroslaw Z Domagala, Michal Leszczynski.

extended

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
E. Frayssinet, B. Beaumont, J. P. Faurie, Pierre GIBART, Zs. Makkai, B. Pécz, P. Lefebvre, P. Valvin.

extended defects

Structural and Electronic Properties of Line Defects in GaN
Joachim Elsner, Alexander Blumenau, Thomas Frauenheim, Robert Jones, Malcolm I Heggie.
Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE
P. Ruterana, Philippe Vermaut , G. Nouet, A. Salvador, H. Morkoç.
Extended Defects in GaN: A Theoretical Study
J. Elsner, Th. Frauenheim, M. Haugk, R. Gutierrez, R. Jones, M.I. Heggie.

extra

The role of gaseous species in group-III nitride growth
S. Yu. Karpov, Yu. N. Makarov, M. S. Ramm.

The keywords used in this indexing have been supplied by the authors.