MIJ-NSR Keyword Index, D

MIJ-NSR Keyword Index, Keywords starting with D

damage

Surface Conversion Effects in Plasma-Damaged p-GaN
X.A. Cao, Stephen J Pearton, G.T. Dang, A.P. Zhang, F. Ren, R.J. Shul, L. Zhang, R. Hickman, J.M. Van Hove.
A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaN
Jung-Min Hwang, J. T. Hsieh, Huey-Liang Hwang, Wei-Hsu Hung.
A Review of Dry Etching of GaN and Related Materials
S.J. Pearton, R. J. Shul, Fan Ren .
Etch Processing of III-V Nitrides
C.R. Eddy, Jr..

DBR

Electron Beam Pumping in Nitride Vertical Cavities With GaN/A10.25Ga0.75 Bragg Reflectors
Harald Klausing, Jochen Aderhold, Fritz Fedler, David Mistele, Jens Stemmer, Olga Semchinova, JŸrgen Graul, JŸrgen DŠnhardt, Siegfried Panzer.

decomposition in ammonia

GaN Decomposition in Ammonia
Daniel D Koleske, Alma E. Wickenden, Richard L. Henry.

decrease.

Electron Beam Bombardment Induced Decrease of Cathodoluminescence Intensity from GaN Not Caused by Absorption in Buildup of Carbon Contamination
Eva M. Campo , G. S. Cargill III, Milan Pophristic, Ian Ferguson.

deep centers

Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy
Zhaoqiang Fang, David C Look, Wook Kim, Hadis Morkoc.
Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
F. Calle, E. Monroy, F. J. Sánchez, E. Muñoz, B. Beaumont, S. Haffouz, M. Leroux, Pierre Gibart .
Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
Hartmut P. Witte, Andre Andre, Marko Lisker, Dirk Rudloff, Juergen Christen, Alois Krost, Martin Stutzmann, F. Scholz.
Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
Alexander Y. Polyakov, Nikolai B. Smirnov, Anatoliy V. Govorkov, Alexander S. Usikov, Natalie M. Shmidt, Boris V. Pushnyi, Denis V. Tsvetkov, Sergey I. Stepanov, Vladimir A. Dmitriev, Mikhail G. Mil'vidskii, Vladimir F. Pavlov.

deep levels

Generation Recombination Noise in GaN Photoconductors
M. Misra, D. Doppalapudi, A.V. Sampath, T.D. Moustakas, P.H. McDonald.
Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
O.P. Seifert, O. Kirfel, M. Munzel, M.T. Hirsch, J. Parisi, M. Kelly, O. Ambacher.

deep levels.

Yellow Band and Deep levels in Undoped MOVPE GaN.
Fernando J. Sanchez, D. Basak, M. A. Sanchez-García, E. Calleja, E. Muñoz, I. Izpura, F. Calle, J. M. G. Tijero, B. Beaumont, P. Lorenzini, P. Gibart, T.S Cheng, C. T. Foxon, J. W. Orton.

deep states

Yellow luminescence in Mg-doped GaN
F. J. Sánchez, F. Calle, D. Basak, J. M. G. Tijero, M. A. Sánchez-García, E. Monroy, E. Calleja, E. Muñoz, B. Beaumont, Pierre Gibart , J.J. Serrano, J.M. Blanco.

defect

Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
Zhigang Mao, Stuart McKernan, C. Barry Carter, Wei Yang, Scott A. McPherson.

Defect Annealing

Effects of Oxygen Ion Implantation in Gallium Nitride
W. Jiang, W.J. Weber, S. Thevuthasan, G.J. Exarhos, B.J. Bozlee.
Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
K. Lorenz, R. Vianden, S.J. Pearton, Cammy R. Abernathy , J.M. Zavada.

defect density

Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy
Kyoyeol Lee, Keunho Auh.

defects

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
E. Frayssinet, B. Beaumont, J. P. Faurie, Pierre GIBART, Zs. Makkai, B. Pécz, P. Lefebvre, P. Valvin.
Thermal Stability of GaN Investigated by Raman Scattering
M. Kuball, F. Demangeot, J. Frandon, M.A. Renucci, N. Grandjean, O. Briot.
Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN
I. Usov, N. Parikh, D.B. Thomson, Robert F. Davis.
Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates
Lianghong Liu, B. Liu, Y. Shi, J.H. Edgar.
Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
S.A. Goodman, F.D. Auret, F.K. Koschnick, J-M. Spaeth, B. Beaumont, P. Gibart.
Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al_xGa_1-xN Layers Grown by MOCVD
J. H. Mazur, Mourad Benamara, Z. Liliental-Weber, W. Swider, J. Washburn, C. J. Eiting, R. D. Dupuis.
DLTS Characterization of Defects Introduced During Sputter Deposition of Au Schottky Contacts on n-GaN
F.D. Auret, S.A. Goodman, F.K. Koschnick, J-M. Spaeth, B. Beaumont, P. Gibart.
Native defects and carbon impurity in cubic BN
I. Gorczyca, A. Svane, N. E. Christensen.
Optical properties of electron-irradiated GaN
I. A. Buyanova, Mt. Wagner, W. M. Chen, L. Lindström, B. Monemar, H. Amano, I. Akasaki.
TEM Study of Defects in Laterally Overgrown GaN Layers
Z. Liliental-Weber, M. Benamara, W. Swider, J. Washburn, J. Park, P.A. Grudowski, C.J. Eiting, R.D. Dupuis.
Polarization and band offsets of stacking faults in AlN and GaN
J. A. Majewski, P. Vogl.
Effect of internal absorption on cathodoluminescence from GaN
Klaus Knobloch, Piotr Perlin , Joachim Krueger, Eicke R. Weber , Christian Kisielowski.
TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
Wendy Lynn Sarney, Lourdes Salamanca-Riba, Vidhya Ramachandran, Randall Feenstra, D. W. Greve.
Determination of the dislocation densities in GaN on c-oriented sapphire
A. Pelzmann, M. Mayer, C. Kirchner, D. Sowada, T. Rotter, Markus Kamp , K. J. Ebeling, S. Christiansen, M. Albrecht, H. P. Strunk, B. Holländer, S. Mantl.

defects filtering

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
B. Beaumont, M. Vaille, G. Nataf, A. Bouillé, J.-C. Guillaume, P. Vénnègues, S. Haffouz, Pierre Gibart .

deformation potential

Raman Determination of the Phonon Deformation Potentials in -GaN
F. Demangeot, J. Frandon, M. A. Renucci, Olivier Briot, Bernard Gil, Roger-Louis Aulombard.

degradation

Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes
Vladimir E. Kudryashov, Sergey S. Mamakin, Andrey N. Turkin, Alexander E. Yunovich, Alexei N. Kovalev, Fedor I. Manyakhin.
Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
F. Manyakhin, A. Kovalev, A. E. Yunovich.
Thermal Stability of GaN Investigated by Raman Scattering
M. Kuball, F. Demangeot, J. Frandon, M.A. Renucci, N. Grandjean, O. Briot.

delta-doping

Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
Jong-Hee Kim, Gye Mo Yang, Sung Chul Choi, Ji Youn Choi, Hyun Kyung Cho, Kee Young Lim, Hyung Jae Lee.

density

Advanced PENDEOEPITAXY(TM) of GaN and Al_xGa_1-xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Edward A. Preble, Robert F. Davis.

desorption rate

The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
A. N. Alexeev, B. A. Borisov, V. P. Chaly, D. M. Demidov, A. L. Dudin, D. M. Krasovitsky, Yu. V. Pogorelsky, A. P. Shkurko, I. A. Sokolov, M. V. Stepanov, A. L. Ter-Martirosyan.

detector array

Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
J.D. Brown, Zhonghai Yu, J. Matthews, S. Harney, J. Boney, J.F. Schetzina, J.D. Benson, K.W. Dang, C. Terrill, Thomas Nohava, Wei Yang, Subash Krishnankutty.
UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
J.D. Brown, J. Boney, J. Matthews, P. Srinivasan, J.F. Schetzina, Thomas Nohava, Wei Yang, Subash Krishnankutty.

detectors

Generation Recombination Noise in GaN Photoconductors
M. Misra, D. Doppalapudi, A.V. Sampath, T.D. Moustakas, P.H. McDonald.

device

New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors
John D. Albrecht, P. Paul Ruden, Mario G. Ancona.
High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter
J. I. Pankove, M. Leksono, S. S. Chang, C. Walker, B. Van Zeghbroeck.

device fabrication

Focused Ion Beam Etching of GaN
C. Flierl, I.H. White, M. Kuball, P.J. Heard, G.C. Allen, C. Marinelli, J.M. Rorison, R.V. Penty, Y. Chen, S.Y. Wang.

device performance

300°C GaN/AlGaN Heterojunction Bipolar Transistor
Fan Ren , Cammy R. Abernathy , J. M. Van Hove, P. P. Chow, R. Hickman, J. J. Klaassen, R. F. Kopf, Hyun Cho, K. B. Jung, J. R. La Roche, R. G. Wilson, J. Han, R. J. Shul, A. G. Baca, S.J. Pearton.

devices

GaN Homoepitaxy for Device Applications
M. Kamp, C. Kirchner, V. Schwegler, A. Pelzmann, E.J. Ebeling, M. Lesczczynski, I. Grzegory, T. Suski, S. Porowski.

DFB laser

Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
Daniel Hofstetter, Robert L. Thornton, Linda T. Romano, David P. Bour, Michael Kneissl, Rose M. Donaldson, Clarence Dunnrowicz.

dielectric functions

Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
Joachim Wagner, Arun Ramakrishnan, Harald Obloh, Michael Kunzer, Klaus Köhler, B. Johs.

diffraction

Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober.

diffraction.

Physical Properties of Bulk GaN Crystals Grown by HVPE
Yu.V. Melnik, K.V. Vassilevski, I.P. Nikitina, A.I. Babanin, V. Yu. Davydov, V.A. Dmitriev.

diffractometry

Macro- and microstrains in MOCVD-grown GaN
A. Usikov, V.V. Ratnikov, R. Kyutt, W. V. Lundin, B. Pushnyi, N. M. Shmidt, M.P. Scheglov.

diffusion

Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
T. Zywietz, Jörg Neugebauer, M. Scheffler, J. Northrup, Chris G. Van de Walle .
Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
M.D. McCluskey, L.T. Romano, B.S. Krusor, D. Hofstetter, D.P. Bour, M. Kneissl, N.M. Johnson, T. Suski, J. Jun.

diffusion-limited

Photoelectrochemical Etching of In_xGa_1-xN
Hyun Cho, S.M. Donovan, C.R. Abernathy, S.J. Pearton, F. Ren, J. Han, R.J. Shul.

diode

Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
M.P. Mack, A. Abare, M. Aizcorbe, Peter Kozodoy , S. Keller, U. K. Mishra, L. Coldren, Steven DenBaars .
Surface Conversion Effects in Plasma-Damaged p-GaN
X.A. Cao, Stephen J Pearton, G.T. Dang, A.P. Zhang, F. Ren, R.J. Shul, L. Zhang, R. Hickman, J.M. Van Hove.
p-doping of GaN by MOVPE
S. Haffouz, B. Beaumont, M. Leroux, M. Laugt, P. Lorenzini, Pierre Gibart , L.G.Hubert-Pfalzgraf.

diodes.

Effect of Photo-Assisted RIE Damage on GaN
Z. Mouffak, N. Medelci-Djezzar, C. Boney, A. Bensaoula, L. Trombetta.

dislocation

Dislocation Arrangement in a Thick LEO GaN Film on Sapphire
Kathleen A Dunn, Sue Babcock, Donald S Stone, Richard J Matyi, Ling Zhang, Thomas F. Kuech.
Mass Transport, Faceting and Behavior of Dislocations in GaN
Shugo Nitta, Takayuki Kashima, Michihiko Kariya, Yohei Yukawa, Shigeo Yamaguchi, Hiroshi Amano, Isamu Akasaki.
The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
Mourad Benamara, zuzanna Liliental-Weber, J. H. Mazur, W. Swider, J. Washburn, M. Iwaya, I. Akasaki, H. Amano.
The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, Robert F. Davis, H. Tsuda, W. Taki, N. Kuwano, K. Oki.
Structural and Electronic Properties of Line Defects in GaN
Joachim Elsner, Alexander Blumenau, Thomas Frauenheim, Robert Jones, Malcolm I Heggie.
Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy
Mira Misra, Anand V Sampath, Theodore Moustakas.
A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire Substrates
Anand V Sampath, Mira Misra, K. Seth, Y. Fedyunin, H. M. Ng, E. Iliopoulos, Z. Feit, Theodore Moustakas.
Surface Morphology of GaN: Flat Versus Vicinal Surfaces
Maohai Xie, Sean M. Seutter, Lianxi Zheng, Sauha Cheung, YeeFai Ng, Huasheng Wu, Shuk Yin Tong.
High-Quality Al_xGa_1-xN Using Low Temperature-Interlayer and its Application to UV Detector
Motoaki Iwaya, Shinji Terao, Nobuaki Hayashi, T. Kashima, Theeradatch Detchprohm, Hiroshi Amano, Isamu Akasaki, Akira Hirano, Cyril Pernot.

dislocations

Dry and Wet Etching for Group III-Nitrides
I. Adesida, C. Youtsey, A. T. Ping, F. Khan, L. T. Romano, G. Bulman.
Microstructure of GaN Grown on (111) Si by MOCVD
D.M. Follstaedt, J. Han, P. Provencio, J.G. Fleming.
Pinholes, Dislocations and Strain Relaxation in InGaN
B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.

disorder

Effect of internal absorption on cathodoluminescence from GaN
Klaus Knobloch, Piotr Perlin , Joachim Krueger, Eicke R. Weber , Christian Kisielowski.

displays

Electron Beam Pumped MQW InGaN/GaN Laser
V.I. Kozlovsky, A.B. Krysa, Y.K. Skyasyrsky, Y.M. Popov, A. Abare, M.P. Mack, S. Keller, U. K. Mishra, L. Coldren, Steven DenBaars , Michael D. Tiberi , T. George.

dissociation

Temperature Dependence of Bound Exciton Emissions in GaN
D.G. Chtchekine, G.D. Gilliland, Z.C. Feng, S.J. Chua, D.J. Wolford, S.E. Ralph, M.J. Schurman, I. Ferguson.

domains

Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
T. Paskova, E.B. Svedberg, L.D. Madsen, R. Yakimova, I.G. Ivanov, A. Henry, B. Monemar.

donor-acceptor pair

Defect Luminescence in Heavily Mg-Doped GaN
M.A. Reshchikov, G-C. Yi, B.W. Wessels.

donors

Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
B.J. Skromme.

doped superlattice

Efficient Acceptor Activation in Al_xGa_1-xN/GaN Doped Superlattices
Ian D Goepfert, E. F. Schubert, Andrei Osinsky, Peter E. Norris.

doping

RBS Lattice Site Location and Damage Recovery Studies on Er Implanted GaN
E. Alves, M.F. DaSilva, J.C. Soares, J. Bartels, R. Vianden, C.R. Abernathy, S.J. Pearton.
Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy
Michael E. Bartram.
Efficient Acceptor Activation in Al_xGa_1-xN/GaN Doped Superlattices
Ian D Goepfert, E. F. Schubert, Andrei Osinsky, Peter E. Norris.
Doping of AlGaN Alloys
Chris G. Van de Walle, C. Stampfl, J. Neugebauer, M.D. McCluskey, N.M. Johnson.
Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
Jin Seo Im, H. Kollmer, O. Gfrorer, J. Off, F. Scholz, A. Hangleiter.
Studies on Carbon As Alternative p-Type Dopant for GaN
U. Birkle, M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel, S. Strauf, P. Michler, J. Gutowski.
Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope
Doru I Florescu, V A Asnin, L G Mourokh, Fred H Pollak, R J Molnar.
Optical Properties of Manganese Doped Amorphous and Crystalline Aluminum Nitride Films
Meghan L Caldwell, Hugh H Richardson, M. E. Kordesch.
p-doping of GaN by MOVPE
S. Haffouz, B. Beaumont, M. Leroux, M. Laugt, P. Lorenzini, Pierre Gibart , L.G.Hubert-Pfalzgraf.
Influence of Doping on the Lattice Dynamics GaN
A. Kaschner, H. Siegle, A. Hoffmann, C. Thomsen, U. Birkle, S. Einfeldt, D. Hommel.
Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
M. D. Bremser, W. G. Perry, T. Zheleva, N. V. Edwards, O. H. Nam, N. Parikh, D. E. Aspnes, Robert F. Davis.

doping.

Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
F. J. Sánchez, F. Calle, M.A. Sanchez-Garcia, E. Calleja, E. Muñoz, C. H. Molloy, D. J. Somerford, F. K. Koschnick, K. Michael, J.-M. Spaeth.

double-heterostructure

Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors
Narihiko Maeda, Tadashi Saitoh, Kotaro Tsubaki, Toshio Nishida, Naoki Kobayashi.

DX center

Doping of AlGaN Alloys
Chris G. Van de Walle, C. Stampfl, J. Neugebauer, M.D. McCluskey, N.M. Johnson.

The keywords used in this indexing have been supplied by the authors.