MIJ-NSR Keyword Index, Keywords starting with C

c-BN

• Native defects and carbon impurity in cubic BN
  I. Gorczyca, A. Svane, N. E. Christensen.

c-GaN

• Mechanisms of Optical Gain in Cubic GaN and InGaN
  J. Holst, A. Hoffmann, I. Broser, T. Frey, B. Schottker, D.J. As, D. Schikora, K. Lischka.

c-InGaN

• Mechanisms of Optical Gain in Cubic GaN and InGaN
  J. Holst, A. Hoffmann, I. Broser, T. Frey, B. Schottker, D.J. As, D. Schikora, K. Lischka.

C-V

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  J. Kozlowski, R. Paszkiewicz, R. Korbutowicz, M. Panek, B. Paszkiewicz, M. Tlaczala.

CAICISS

• Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire
  M. Sumiya, T. Ohnishi, M. Tanaka, A. Ohtomo, M. Kawasaki, M. Yoshimoto, K. Koinuma, K. Ohtsuka, S. Fuke.

• Review of polarity determination and control of GaN
  M. Sumiya, S. Fuke.

camera

• High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
  J. D. Brown, J. Matthews, S. Harney, J. C. Boney, J. F. Schetzina, J. D. Benson, K. V. Dang, Thomas Nohava, Wei Yang, Subash Krishnankutty.

carbides

• The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation
  B. Liu, J.H. Edgar, Z. Gu, D. Zhuang, B. Raghothamachar, M. Dudley, A. Sarua, Martin Kuball , H. M. Meyer III.

carbon

• Studies on Carbon As Alternative p-Type Dopant for GaN
  U. Birkle, M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel, S. Strauf, P. Michler, J. Gutowski.

Carbon contamination

• Electron Beam Bombardment Induced Decrease of Cathodoluminescence Intensity from GaN Not Caused by Absorption in Buildup of Carbon Contamination
  Eva M. Campo , G. S. Cargill III, Milan Pophristic, Ian Ferguson.

carbon doping

• Photoluminescence Enhancement and Morphological Properties of Carbon Co-Doped GaN:Er
  Mark Eddy Overberg, C. R. Abernathy, S. J. Pearton, R. G. Wilson, J. M. Zavada.

carrier confinement

• Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
  Jin Seo Im, H. Kollmer, O. Gfrorer, J. Off, F. Scholz, A. Hangleiter.

• Characteristic Temperature Estimation for GaN-Based Lasers
  T. Honda, H. Kawanishi, T. Sakaguchi, F. Koyama, K. Iga.

Carrier Dynamics

• Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
  A. N. Cartwright, Paul M. Sweeney, Thomas Prunty, David P. Bour, Michael Kneissl.

carriers

• Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
  J. Sik, M. Schubert, T. Hofmann, V. Gottschalch.

cathodoluminescence

• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. J. Rosner, G. Girolami, Paul T. Fini , J.P. Ibbetson, S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.

• Effect of internal absorption on cathodoluminescence from GaN
  Klaus Knobloch, Piotr Perlin , Joachim Krueger, Eicke R. Weber , Christian Kisielowski.

• Comparison of Luminescence and Physical Morphologies of GaN Epilayers
  Carol Trager-Cowan , P. G. Middleton, K. P. O'Donnell, S. Ruffenach-Clur, Olivier Briot.

• The Morphology and Cathodoluminescence of GaN Thin Films
  C. Trager-Cowan, P. G. Middleton, K. P. O'Donnell.

• Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  Zhonghai Yu , M.A.L. Johnson, T. Mcnulty, J.D. Brown, J.W. Cook,Jr, J.F. Schetzina.

• Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
  Axel Kaschner, Jens Holst, Ulrich von Gfug, Axel Hoffmann, Frank Bertram, Till Riemann, Dirk Rudloff, Peter Fischer, Jürgen Christen, Robert Averbeck, Henning Riechert.

• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  Carol Trager-Cowan, D McColl, F Sweeney, S T F Grimson, J-F Treguer, A Mohammed, P G Middleton, S K Manson-Smith, K P O'Donnell, W Van der Stricht, I Moerman, P Demeester, M F Wu, A Vantomme, D Zubia, S D Hersee.

• Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
  A. Petersson, Anders Gustafsson , L. Samuelson, Satoru Tanaka , Yoshinobu Aoyagi.

• Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
  E.M. Goldys, M. Godlewski, T. Paskova, G. Pozina, B. Monemar.

• Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaN
  M. Toth, K. Fleischer, M.R. Phillips.

• Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire
  Giancarlo Salviati, Nicola Armani, Carlo Zanotti-Fregonara, Enos Gombia, Martin Albrecht, Horst Strunk, Markus Mayer, Markus Kamp, Andrea Gasparotto.

• Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  L.-L. Chao, G. S. Cargill III, C. Kothandaraman, D. Cyr, G. Flynn, E. S. Hellman, D. Wiesmann, D. N. E. Buchanan, I. Brener.

CBED

• Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
  Lijie Zhao, Hughes Marchand, Paul Fini, Steven Denbaars, Umesh Mishra, Jim Speck.

characteristic temperature

• Characteristic Temperature Estimation for GaN-Based Lasers
  T. Honda, H. Kawanishi, T. Sakaguchi, F. Koyama, K. Iga.

characterization

• Prism Coupling as a Non-Destructive Tool for Optical Characterization of (Al,Ga) Nitride Compounds
  El Hadj Dogheche, Brahim Belgacem, Denis Remiens, Pierre Ruterana, Franck OMNES.

chemical treatment

• Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
  B.J. Skromme.

chemical vapor deposition

• Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
  B.J. Skromme.

CL

• Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
  Zhonghai Yu, M.A.L. Johnson, J.D. Brown, N.A. El-Masry, J.F. Muth, J.W. Cook, Jr., J.F. Schetzina, K.W. Haberern, H.S. Kong, J.A. Edmond.

• GaN: From Selective Area Epitaxy To Epitaxial Lateral Overgrowth
  X. Li, S.G. Bishop, J.J. Coleman.

Cl2-based chemistries

• Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
  Hyun Cho, Y.B. Hahn, D.C. Hays, K.B. Jung, S.M. Donovan, C.R. Abernathy, S.J. Pearton, R.J. Shul.

Cl2/Ar discharges

• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
  Anping Zhang, Gerard Dang, F. Ren, X.A. CAo, H. Cho, E.S. Lambers, S.J. Pearton, R.J. Shul, L. Zhang, A.G. Baca, R. Hickman, J.M. Van Hove.

co-doping

• Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN
  Ki Soo Kim, Chang Seok Oh, Myung Soo Han, Chi Sun Kim, Gye Mo Yang, Jeon Wook Yang, Chang-Hee Hong, Chang Joo Youn, Kee Young Lim, Hyung Jae Lee.

coalescence

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober.

compensation

• Studies on Carbon As Alternative p-Type Dopant for GaN
  U. Birkle, M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel, S. Strauf, P. Michler, J. Gutowski.

complex-coupled

• Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
  Daniel Hofstetter, Robert L. Thornton, Linda T. Romano, David P. Bour, Michael Kneissl, Rose M. Donaldson, Clarence Dunnrowicz.

complexe

• Theoretical Studies Of Hydrogen Passivated Substitutional Magnesium Acceptor In Wurzite GaN
  V. J. B. Torres, S. Öberg, R. Jones.

composition

• Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x0.15) Grown by Metal-Organic Chemical Vapor Deposition
  J. Wagner, A. Ramakrishnan, D. Behr, M. Maier, N. Herres, M. Kunzer, H. Ogloh, K-H. Bachem.

composition pulling effect

• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, Robert F. Davis, H. Tsuda, W. Taki, N. Kuwano, K. Oki.

compositional fluctuations

• Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
  S. Einfeldt, T. Bottcher, D. Hommel, H. Selke, P.L. Ryder, F. Gertram, T. Riemann, T. Riemann, D. Rudloff, J. Christen.

COMPOSITIONAL INHOMOGENEITY

• Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
  Lawrence Robins, A.J. Paul, C.A. Parker, J. C. Roberts, S. M. Bedair, E. L. Piner , N. A. El-Masry.

computational materials science; GaN transport; hot electrons

• Computational Materials Science, An Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences
  A. Sher, M. van Schilfgaarde, M.A. Berding, S. Krishnamurthy, A-B. Chen.

computer simulation

• Simulations of Defect-Interface Interactions in GaN
  James Chisholm, Paul D Bristowe.

conductivity

• Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope
  Doru I Florescu, V A Asnin, L G Mourokh, Fred H Pollak, R J Molnar.

confined exciton

• Spectroscopic Studies in InGaN Quantum Wells
  S.F. Chichibu, T. Sota, K. Wada, S.P. DenBaars, S. Nakamura.

Contact Resistance

• Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor
  R.W. Chuang, A.Q. Zou, H.P. Lee, Z.J. Dong, F.F. Xiong, R. Shih, M. Bremser, H. Juergensen.

contacts

• Characteristics of Ti/Pt/Au Ohmic Contacts on p-Type GaN/A1xGA1-xN Superlattices
  Ling Zhou, Farid Khan, A. T. Ping, A. Osinski, I. Adesida.

crack

• Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes
  Isamu Akasaki, Satoshi Kamiyama, Theeradatch Detchprohm, Tetsuya Takeuchi, Hiroshi Amano.

critical

• Pinholes, Dislocations and Strain Relaxation in InGaN
  B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.

cryogenic

• Damage-Free Photoassisted Cryogenic Dry Etching and Photoelectrochemical Wet Etching of GaN
  J.T. Hsieh, J.M. Hwang, H.L. Hwang, W.H. Hung.

cryogenic treatment

• Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment
  Mi-Ran Park, Wayne A Anderson, Seong-Ju Park.

crystal

• Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
  V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin, Z. Sitar.

Crystal growth

• Thermal Residual Stress Modeling in AlN and GaN Multilayer Samples
  Kai Wang, Robert R. Reeber.

• Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
  M. Callahan, M. Harris, M. Suscavage, D. Bliss, J. Bailey.

Crystal morphology

• GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen
  Jolanta Prywer, S. Krukowski.

crystal structure

• Crystal Structure and Defects in Nitrogen-Deficient GaN
  S. Oktyabrsky, K. Dovidenko, A.K. Sharma, V. Joshkin, J. Narayan.

crystallization

• Recent Results in the Crystal Growth of GaN at High N₂ Pressure
  I. Grzegory, M. Bockowski, B. Lucznik, S. Krukowski, M. Wroblewski, S. Porowski.

• The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation
  B. Liu, J.H. Edgar, Z. Gu, D. Zhuang, B. Raghothamachar, M. Dudley, A. Sarua, Martin Kuball , H. M. Meyer III.

crystallographic

• Fabrication of Smooth GaN-Based Laser Facets
  D.A. Stocker, E.F. Schubert, K.S. Boutros, J.M. Redwing.

cubic

• Epitaxial growth of cubic GaN and AlN on Si(001)
  A. Barski, U. Rössner, J. L. Rouvière, M. Arlery.

cubic boron nitride

• Native defects and carbon impurity in cubic BN
  I. Gorczyca, A. Svane, N. E. Christensen.

cubic GaN

• Cubic GaN Heteroepitaxy on Thin-SiC Covered Si(001)
  Yuichi Hiroyama, Masao Tamura.

• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
  D.J. As, T. Simonsmeier, J. Busch, B. Schottker, M. Lubbers, J. Mimkes, D. Schikora, K. Lischka, W. Kriegseis, W. Burkhardt, B.K. Meyer.

Cubic phase

• Cubic InGaN Grown by MOCVD
  J.B. Li, Hui Yang, L.X. Zheng, D.P. Xu, Y.T. Wang.

• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
  M. Godlewski, E. M. Goldys, M. R. Philips, J. P. Bergman, B. Monemar, R. Langer, A. Barski.

current

• Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
  Kay Domen , Reiko Soejima, Akito Kuramata , Toshiyuki Tanahashi.

• Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
  Subash Krishnankutty, Wei Yang, Thomas Nohava, P. Paul Ruden.

CW

• Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers
  Masayoshi Koike, S. Yamasaki, Yuta Tezen, S. Nagai, S. Iwayama, A. Kojima.

  The keywords used in this indexing have been supplied by the authors.

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  Index last updated Tuesday, January 18, 2005 7:47:47 PM.
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