MIJ-NSR Keyword Index, Keywords starting with B

background impurity

• In-depth Analysis of the Impurities in GaN
  A. P. Kovarsky, V. S. Strykanov.

band gap

• Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
  E. V. Kalashnikov, V. I. Nikolaev.

• Preparation of stoichiometric GaN(0001)-1x1: an XPS study
  S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, H.W. Yeom, H. Miki, M. Oshima.

• Effect of internal absorption on cathodoluminescence from GaN
  Klaus Knobloch, Piotr Perlin , Joachim Krueger, Eicke R. Weber , Christian Kisielowski.

band gap energy

• On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  Christian Wetzel, Shugo Nitta, Tetsuya Takeuchi, Shigeo Yamaguchi, H. Amano, I. Akasaki.

band structure

• Electronic Properties of Ga(In)NAs Alloys
  I. A. Buyanova, W. M. Chen, B. Monemar.

• Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
  J. A. Majewski, M. Städele, P. Vogl.

• Electronic Structure and Optical Properties of ZnGeN₂
  Sukit Limpijumnong, Sergey N. Rashkeev, Walter R.L. Lambrecht.

• Effect of internal absorption on cathodoluminescence from GaN
  Klaus Knobloch, Piotr Perlin , Joachim Krueger, Eicke R. Weber , Christian Kisielowski.

• Theoretical Study of ZnO and Related Mg_xZn_1-xO Alloy Band Structures
  Walter R.L. Lambrecht, Sukit Limpijumnong, B. Segall.

band tails

• The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
  N. A. Shapiro, Piotr Perlin , Christian Kisielowski, L. S. Mattos, J. W. Yang, Eicke R. Weber .

bandgap bowing

• Theoretical Study of ZnO and Related Mg_xZn_1-xO Alloy Band Structures
  Walter R.L. Lambrecht, Sukit Limpijumnong, B. Segall.

barrier

• Optical Properties of AlGaN Quantum Well Structures
  Hideki Hirayama, Yasushi Enomoto, Atsuhiro Kinoshita, Akira Hirata, Yoshinobu Aoyagi.

Base Transit Time

• Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
  Shean-Yih Chiu, A.F.M. Anwar, Shangli Wu.

BBr₃

• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
  Hyun Cho, J. Hong, T. Maeda, S.M. Donovan, J. Devin MacKenzie , Cammy R. Abernathy , S.J. Pearton, R. J. Shul, J. Han.

behavior of hydrogen

• Properties and Effects of Hydrogen in GaN
  Stephen J. Pearton, Hyun Cho, Fan Ren, J. -I. Chyi, Jung Han, R. G. Wilson.

bending

• A TEM Study of GaN Grown by ELO on (0001) 6H-SiC
  Pierre Ruterana, Bernard Beaumont, Pierre Gibart, Yu Melnik.

beryllium

• Activation of Beryllium-Implanted GaN by Two-Step Annealing
  Yuejun Sun, Leng Seow Tan, Soo-jin Chua, Savarimuthu Prakash.

BGaN

• Growth and Characterization of B_xGa_1-xN on 6H-SiC (0001) by MOVPE
  C.H. Wei, Z.Y. Xie, J.H. Edgar, K.C. Zeng, J.Y. Lin, H.X. Jiang, C. Ignatiev, J. Chaudhuri, D.N. Braski.

BI₃

• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
  Hyun Cho, J. Hong, T. Maeda, S.M. Donovan, J. Devin MacKenzie , Cammy R. Abernathy , S.J. Pearton, R. J. Shul, J. Han.

biaxial stress

• Raman Determination of the Phonon Deformation Potentials in -GaN
  F. Demangeot, J. Frandon, M. A. Renucci, Olivier Briot, Bernard Gil, Roger-Louis Aulombard.

binary alloys

• The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
  Alexey V. Dmitriev, Alexander L. Oruzheinikov.

bipolar transistor

• A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
  John T Torvik , M. Leksono, J. I. Pankove, B. Van Zeghbroeck.

birefringence

• Electronic Structure and Optical Properties of ZnGeN₂
  Sukit Limpijumnong, Sergey N. Rashkeev, Walter R.L. Lambrecht.

bis(cyclopentadienyl)magnesium

• Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy
  Michael E. Bartram.

BJT

• High-Temperature Reliability of GaN Electronic Devices
  Seikoh Yoshida, Joe Suzuki.

blue

• Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
  S. Strite, A. Pelzmann, T. Suski, M. Leszczynski, J. Jun, A. Rockett, Markus Kamp , K. J. Ebeling.

• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
  S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, T. Mukai.

Blue LEDs

• Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions
  W.Y. Ho, W.K. Fong, Charles Surya, K.Y. Tong, L.W. Lu, W.K. Ge.

boron contamination

• Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire
  A.J. Ptak, K.S. Ziemer, M.R. Millecchia, C.D. Stinespring, T.H. Myers.

bowing

• Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
  S. Stepanov, W.N.Wang, B.S.Yavich, V. Bougrov, Y.T.Rebane, Y.G.Shreter.

• Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x0.15) Grown by Metal-Organic Chemical Vapor Deposition
  J. Wagner, A. Ramakrishnan, D. Behr, M. Maier, N. Herres, M. Kunzer, H. Ogloh, K-H. Bachem.

• Growth and Doping of AlGaN Alloys by ECR-assisted MBE
  D. Korakakis, H.M. Ng, M. Misra, W. Grieshaber, T.D. Moustakas.

• Optical Properties of GaNAs Grown by MBE
  G. Pozina, I. G. Ivanov, B. Monemar, J.V. Thordson, T.G. Andersson.

Bragg reflector

• AlGaN-Based Bragg Reflectors
  O. Ambacher, M. Arzberger, D. Brunner, H. Angerer, F. Freudenberg, N. Esser, T. Wethkamp, K. Wilmers, W. Richter, M. Stutzmann.

breakdown

• Avalanche Breakdown Luminescence of InGaN/AlGaN/GaN Heterostructures
  F. Manyakhin, A. Kovalev, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich.

buffer

• Microstructure of GaN Grown on (111) Si by MOCVD
  D.M. Follstaedt, J. Han, P. Provencio, J.G. Fleming.

buffer layer

• Current status of GaN crystal growth by sublimation sandwich technique
  P. G. Baranov, E. N. Mokhov, A. O. Ostroumov, M. G. Ramm, M. S. Ramm, V. V. Ratnikov, A. D. Roenkov, Yu. A. Vodakov, A. A. Wolfson, G. V. Saparin, S. Yu. Karpov, D. V. Zimina, Yu. N. Makarov, Holger Juergensen.

buffer layers

• Comparison of Luminescence and Physical Morphologies of GaN Epilayers
  Carol Trager-Cowan , P. G. Middleton, K. P. O'Donnell, S. Ruffenach-Clur, Olivier Briot.

bulk

• TEM Study of Bulk AlN Growth by Physical Vapor Transport
  Wendy Lynn Sarney, Lourdes Salamanca-Riba, Tim Hossain, P. Zhou, H N Jayatirtha, Hyoung Ho Kang, R. D. Vispute, Michael Spencer, Ken Jones.

• Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
  V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin, Z. Sitar.

• Recent Results in the Crystal Growth of GaN at High N₂ Pressure
  I. Grzegory, M. Bockowski, B. Lucznik, S. Krukowski, M. Wroblewski, S. Porowski.

• AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy
  Andrey E Nikolaev, Irina Nikitina, Andrey Zubrilov, Marina Mynbaeva, Yuriy Melnik, Vladimir Dmitriev.

bulk crystal

• Current status of GaN crystal growth by sublimation sandwich technique
  P. G. Baranov, E. N. Mokhov, A. O. Ostroumov, M. G. Ramm, M. S. Ramm, V. V. Ratnikov, A. D. Roenkov, Yu. A. Vodakov, A. A. Wolfson, G. V. Saparin, S. Yu. Karpov, D. V. Zimina, Yu. N. Makarov, Holger Juergensen.

bulk crystal growth

• New Technique for Sublimation Growth of AlN Single Crystals
  Y. Shi, B. Liu, Lianghong Liu, J.H. Edgar, E.A. Payzant, J. M. Hayes, Martin Kuball .

Bulk crystals

• GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen
  Jolanta Prywer, S. Krukowski.

• Physical Properties of Bulk GaN Crystals Grown by HVPE
  Yu.V. Melnik, K.V. Vassilevski, I.P. Nikitina, A.I. Babanin, V. Yu. Davydov, V.A. Dmitriev.

• Wet Chemical Etching of AlN Single Crystals
  D. Zhuang, J.H. Edgar, Lianghong Liu, B. Liu, L. Walker.

Bulk GaN Substrates

• Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
  C.T. Foxon, T.S. Cheng, D. Korakakis, S.V. Novikov, R.P. Campion, I. Grzegory, S. Porowski, M. Albrecht, H.P. Strunk.

  The keywords used in this indexing have been supplied by the authors.

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  Index last updated Tuesday, January 18, 2005 7:47:44 PM.
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