MIJ-NSR Keyword Index, Keywords starting with A

A^IIIB^V nitrides

• New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type A^IIIB^V on sapphire substrates
  M.J. Kotelyanskii, I.M. Kotelyanskii, V.B. Kravchenko.

absorption

• Electron Beam Bombardment Induced Decrease of Cathodoluminescence Intensity from GaN Not Caused by Absorption in Buildup of Carbon Contamination
  Eva M. Campo , G. S. Cargill III, Milan Pophristic, Ian Ferguson.

absorption coefficient

• Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys
  J.F. Muth, J.D. Brown, M.A.L. Johnson, Zhonghai Yu, R.M. Kolbas, J.W. Cook, Jr., J.F. Schetzina.

acceptor

• Evidence for Shallow Acceptor Levels in MBE Grown GaN
  B. G. Ren, J. W. Orton, T. S. Cheng, D. J. Dewsnip, D. E. Lacklison, C. T. Foxon, C. H. Malloy, X. Chen.

• Yellow luminescence in Mg-doped GaN
  F. J. Sánchez, F. Calle, D. Basak, J. M. G. Tijero, M. A. Sánchez-García, E. Monroy, E. Calleja, E. Muñoz, B. Beaumont, Pierre Gibart , J.J. Serrano, J.M. Blanco.

• Theoretical Studies Of Hydrogen Passivated Substitutional Magnesium Acceptor In Wurzite GaN
  V. J. B. Torres, S. Öberg, R. Jones.

activation

• Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
  Samuel M. Myers, Alan F. Wright, Gary A. Petersen, Carlton H. Seager, Mary H. Crawford, W. R. Wampler, Jung Han.

activation energy

• Photoelectrochemical Etching of In_xGa_1-xN
  Hyun Cho, S.M. Donovan, C.R. Abernathy, S.J. Pearton, F. Ren, J. Han, R.J. Shul.

activation of acceptors

• Electrical Characterization of MOVPE-Grown p-Type GaN:Mg Against Annealing Temperature
  Shizuo Fujita, Mitsuru Funato, Doo-Cheol Park, Yoshifumi Ikenaga, Shigeo Fujita.

active nitrogen

• Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire
  A.J. Ptak, K.S. Ziemer, M.R. Millecchia, C.D. Stinespring, T.H. Myers.

adatom

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
  T. Zywietz, Jörg Neugebauer, M. Scheffler, J. Northrup, Chris G. Van de Walle .

adducts

• Thermodynamic properties of group-III nitrides and related species
  I. N. Przhevalskii, S. Yu. Karpov, Yu. N. Makarov.

AFM

• Preparation of Sapphire for High Quality III-Nitride Growth
  J. Cui, A. Sun, M. Reshichkov, F. Yun, A. Baski, H. Morkoç.

• Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
  Gon Namkoong, W. Alan Doolittle, Sangbeom Kang, Huang Sa, April S. Brown, Stuart R. Stock .

• Temperature Effect on the Quality of AlN Thin Films
  Margarita P. Thompson, Andrew R. Drews, Changhe Huang, Gregory W. Auner.

AlBN

• Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources
  A. J. Ptak, K. S. Ziemer, L. J. Holbert, C. D. Stinespring, Thomas H Myers.

ALE

• Studies on Carbon As Alternative p-Type Dopant for GaN
  U. Birkle, M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel, S. Strauf, P. Michler, J. Gutowski.

AlGaInN

• Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
  Yong-Hoon Cho, Gordon H. Gainer, Jack B. Lam, Jin Joo Song, W. Yang, Wonho Jhe.

• MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics
  Jung Han, Jeffrey Figiel, Gary Petersen, Samuel Myers, Mary Crawford, Michael Banas, Sean Hearne.

AlGaN

• Doping of AlGaN Alloys
  Chris G. Van de Walle, C. Stampfl, J. Neugebauer, M.D. McCluskey, N.M. Johnson.

• Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
  H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel, I. Akasaki.

• The Effect of Al in Plasma-Assisted MBE-Grown GaN
  Otto Zsebök, Jan V Thordson, Qingxiang Zhao, Ulf Södervall, Lars Ilver, Thorvald G Andersson.

• Growth and Doping of AlGaN Alloys by ECR-assisted MBE
  D. Korakakis, H.M. Ng, M. Misra, W. Grieshaber, T.D. Moustakas.

• Optical Properties of Si-Doped Al_xGa_1-xN/Al_yGa_1-yN (x=0.24-0.53, y=0.11) Multi-Quantum-Well Structures
  H. Hirayama, Y. Aoyagi.

• Contact Issues for GaN Technology
  D. Qiao, L.S. Yu, S.S.Lau, G. J. Sullivan, S. Ruvimov, Z. Liliental-Weber.

• High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
  J. D. Brown, J. Matthews, S. Harney, J. C. Boney, J. F. Schetzina, J. D. Benson, K. V. Dang, Thomas Nohava, Wei Yang, Subash Krishnankutty.

• Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
  Joachim Wagner, Arun Ramakrishnan, Harald Obloh, Michael Kunzer, Klaus Köhler, B. Johs.

• Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys
  J.F. Muth, J.D. Brown, M.A.L. Johnson, Zhonghai Yu, R.M. Kolbas, J.W. Cook, Jr., J.F. Schetzina.

• Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes
  Isamu Akasaki, Satoshi Kamiyama, Theeradatch Detchprohm, Tetsuya Takeuchi, Hiroshi Amano.

• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
  E. Monroy, F. Calle, E. Muñoz, F. Omnes, B. Beaumont, Pierre Gibart , J. A. Muñoz, F. Cusso.

• Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates
  Nezih Pala, R. Gaska, M. Shur, J. W. Yang, M. A. Khan.

• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
  Adam W. Saxler, Philippe Debray, Ronald E. Perrin, Said Elhamri, William C. Mitchel, Chris R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck.

• Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
  Jung Han, M.H. Crawford, R.J. Shul, S.J. Hearne, E. Chason, J.J. Figiel, M. Banas.

• High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes
  Necmi Biyikli, Tolga Kartaloglu, Orhan Aytur, Ibrahim Kimukin, Ekmel Ozbay.

• Schottky Diodes on MOCVD Grown AlGaN Films.
  A. Y. Polyakov, N.B. Smirnov, A.V. Govorkov, D. W. Greve, M. Skowronski, M. Shin, Joan M. Redwing.

• High-Quality Al_xGa_1-xN Using Low Temperature-Interlayer and its Application to UV Detector
  Motoaki Iwaya, Shinji Terao, Nobuaki Hayashi, T. Kashima, Theeradatch Detchprohm, Hiroshi Amano, Isamu Akasaki, Akira Hirano, Cyril Pernot.

• Correlation Between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity In AlGaN/GaN Modulation Doped Heterostructures
  Jizhong Li, Jing Li, Jingyu Lin, Hongxing Jiang.

• Heterostructure for UV LEDs Based on Thick AlGaN Layers
  A. V. Sakharov, W. V. Lundin, A. Usikov, U. I. Ushakov, Yu A. Kudriavtsev, A.V. Lunev, Y.M. Sherniakov, N.N. Ledentsov.

• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, Robert F. Davis, H. Tsuda, W. Taki, N. Kuwano, K. Oki.

• AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties
  Edwin L Piner, David M Keogh, Jeff S Flynn, Joan M Redwing.

• AlGaN-Based Bragg Reflectors
  O. Ambacher, M. Arzberger, D. Brunner, H. Angerer, F. Freudenberg, N. Esser, T. Wethkamp, K. Wilmers, W. Richter, M. Stutzmann.

• Optical Investigations of AlGaN on GaN Epitaxial Films
  G. Steude, T. Christmann, B.K. Meyer, A. Goeldner, A. Hoffmann, F. Bertram, J. Christen, H. Amano, I. Akasaki.

• Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures
  JA. Grenko, CL. Reynolds Jr, R. Schlesser, K. Bachmann, Z. Rietmeier, Robert F. Davis, Z. Sitar.

• Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
  M. Schubert, A. Kasic, T.E. Tiwald, J. Off, B. Kuhn, Ferdinand Scholz.

• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  Carol Trager-Cowan, D McColl, F Sweeney, S T F Grimson, J-F Treguer, A Mohammed, P G Middleton, S K Manson-Smith, K P O'Donnell, W Van der Stricht, I Moerman, P Demeester, M F Wu, A Vantomme, D Zubia, S D Hersee.

• Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
  Jin Seo Im, H. Kollmer, O. Gfrorer, J. Off, F. Scholz, A. Hangleiter.

• High-Performance Solar-Blind AlGaN Schottky Photodiodes
  Necmi Biyikli, Tolga Kartaloglu, Orhan Aytur, Ibrahim Kimukin, Ekmel Ozbay.

AlGaN alloy

• Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant
  H. Hirayama, Y. Aoyagi, S. Tanaka.

AlGaN epitaxy

• Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  M. D. Bremser, W. G. Perry, T. Zheleva, N. V. Edwards, O. H. Nam, N. Parikh, D. E. Aspnes, Robert F. Davis.

AlGaN ternary alloys

• MOVPE Growth and Structural Characterization of Al_xGa_1-xN
  S. Ruffenach-Clur, Olivier Briot, Bernard Gil, Roger-Louis Aulombard, J. L. Rouviere.

AlGaN/GaN HFET

• The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
  K.A. Filippov, A.A. Balandin.

• The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors
  W.L. Liu, V.O. Turin, A.A. Balandin, Y.L. Chen, K.L. Wang.

alloy

• Optical Properties of GaNAs Grown by MBE
  G. Pozina, I. G. Ivanov, B. Monemar, J.V. Thordson, T.G. Andersson.

• New Technique for Sublimation Growth of AlN Single Crystals
  Y. Shi, B. Liu, Lianghong Liu, J.H. Edgar, E.A. Payzant, J. M. Hayes, Martin Kuball .

• Raman characterization of the optical phonons in Al_xGa_1-xN layers grown by MBE and MOCVD
  A. Cros, H. Angerer, R. Handschuh, O. Ambacher, M. Stutzmann.

• Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  M. D. Bremser, W. G. Perry, T. Zheleva, N. V. Edwards, O. H. Nam, N. Parikh, D. E. Aspnes, Robert F. Davis.

alloy.

• Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
  E. V. Kalashnikov, V. I. Nikolaev.

alloys

• Theoretical Study of ZnO and Related Mg_xZn_1-xO Alloy Band Structures
  Walter R.L. Lambrecht, Sukit Limpijumnong, B. Segall.

AlN

• Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects
  I. Gorczyca, A. Svane, N. E. Christensen.

• Phonon Dynamics and Lifetimes of AlN and GaN Crystallites
  Leah Bergman, Dimitri Alexson, Robert J. Nemanich, Mitra Dutta, Michael A. Stroscio, Cengiz Balkas, Robert F. Davis.

• AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy
  Andrey E Nikolaev, Irina Nikitina, Andrey Zubrilov, Marina Mynbaeva, Yuriy Melnik, Vladimir Dmitriev.

• Hardness of bulk single-crystal GaN and AlN
  Ichiro Yonenaga.

• Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates
  Leo J Schowalter, Juan C Rojo, Nikolai Yakolev, Yuriy Shusterman, Katherine Dovidenko, Rungjun Wang, Ishwara Bhat, Glen A Slack.

• Microstructure of GaN Grown on (111) Si by MOCVD
  D.M. Follstaedt, J. Han, P. Provencio, J.G. Fleming.

• Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
  K. Lorenz, R. Vianden, S.J. Pearton, Cammy R. Abernathy , J.M. Zavada.

• Temperature Effect on the Quality of AlN Thin Films
  Margarita P. Thompson, Andrew R. Drews, Changhe Huang, Gregory W. Auner.

• Structure of MOVPE Deposited AlN on Si(111)
  Eric Rehder, M. Zhou, L. Zhang, N.R. Perkins, S.E. Babcock, T.F. Kuech.

• Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
  H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel, I. Akasaki.

• Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures
  JA. Grenko, CL. Reynolds Jr, R. Schlesser, K. Bachmann, Z. Rietmeier, Robert F. Davis, Z. Sitar.

• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
  Sergey A. Nikishin, Nikolai N Faleev, Vladimir G. Antipov, Sebastien Francoeur, Luis Grave de Peralta, George A. Seryogin, Mark Holtz, Tat'yana I. Prokofyeva, George Chu, Andrei S. Zubrilov, Vyacheslav A. Elyukhin, Irina P. Nikitina, Andrei Nikolaev, Yuriy Melnik, Vladimir Dmitriev, Henryk Temkin.

AlN)_x(SiC)_1-x

• New Technique for Sublimation Growth of AlN Single Crystals
  Y. Shi, B. Liu, Lianghong Liu, J.H. Edgar, E.A. Payzant, J. M. Hayes, Martin Kuball .

aluminum gallium nitride (AlGaN)

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober.

aluminum nitride

• New Technique for Sublimation Growth of AlN Single Crystals
  Y. Shi, B. Liu, Lianghong Liu, J.H. Edgar, E.A. Payzant, J. M. Hayes, Martin Kuball .

• The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation
  B. Liu, J.H. Edgar, Z. Gu, D. Zhuang, B. Raghothamachar, M. Dudley, A. Sarua, Martin Kuball , H. M. Meyer III.

• Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
  L.J. Schowalter, Y. Shusterman, R. Wang, I. Bhat, G. Arunmozhi, G.A. Slack.

• Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
  T. Gehrke, K.J. Linthicum, D.B. Thomson, P. Rajagopal, A.D. Batchelor, R.F. Davis.

• Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
  V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin, Z. Sitar.

• Comparative Growth of AlN on Singular and Off-Axis 6H and 4h-SiC by MOCVD
  S. Wilson, C.S. Dickens, J. Griffin, M.G. Spencer.

• Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates
  Lianghong Liu, B. Liu, Y. Shi, J.H. Edgar.

Aluminum nitrides

• Wet Chemical Etching of AlN Single Crystals
  D. Zhuang, J.H. Edgar, Lianghong Liu, B. Liu, L. Walker.

Ambient gas

• Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via MOVPE
  Kazuyuki Tadatomo, Yoichiro Ohuchi, Hiroaki Okagawa, Hirotaka Itoh, Hideto Miyake, Kazumasa Hiramatsu.

ammonia

• Growth Rate Reduction of GaN Due to Ga Surface Accumulation
  Devin Crawford, Ruediger Held, A. M. Johnston, A. M. Dabiran, Philip I. Cohen .

• The role of gaseous species in group-III nitride growth
  S. Yu. Karpov, Yu. N. Makarov, M. S. Ramm.

• GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium
  Michael E. Bartram, J. Randall Creighton.

• Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
  Markus Kamp , M. Mayer, A. Pelzmann, K. J. Ebeling.

ammonia cracking

• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  A. N. Alexeev, B. A. Borisov, V. P. Chaly, D. M. Demidov, A. L. Dudin, D. M. Krasovitsky, Yu. V. Pogorelsky, A. P. Shkurko, I. A. Sokolov, M. V. Stepanov, A. L. Ter-Martirosyan.

ammonia decomposition

• Novel approach to simulation of group-III nitrides growth by MOVPE
  S. Yu. Karpov, V. G. Prokofyev, E. V. Yakovlev, R. A. Talalaev, Yu. N. Makarov.

and annealing.

• A Review of Dry Etching of GaN and Related Materials
  S.J. Pearton, R. J. Shul, Fan Ren .

and related materials

• Properties and Effects of Hydrogen in GaN
  Stephen J. Pearton, Hyun Cho, Fan Ren, J. -I. Chyi, Jung Han, R. G. Wilson.

anisotropy

• Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)
  H.P. Gillis, M.B. Christopher, K.P. Martin, D.A. Choutov.

• Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
  B.J. Skromme.

• Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
  M. Schubert, A. Kasic, T.E. Tiwald, J. Off, B. Kuhn, Ferdinand Scholz.

anneal

• Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
  M.D. McCluskey, L.T. Romano, B.S. Krusor, D. Hofstetter, D.P. Bour, M. Kneissl, N.M. Johnson, T. Suski, J. Jun.

• Activation of Beryllium-Implanted GaN by Two-Step Annealing
  Yuejun Sun, Leng Seow Tan, Soo-jin Chua, Savarimuthu Prakash.

• Preparation of Sapphire for High Quality III-Nitride Growth
  J. Cui, A. Sun, M. Reshichkov, F. Yun, A. Baski, H. Morkoç.

• A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence Spectroscopy
  Abigail Bell, Ian Harrison, Dimitris Korakakis, Eric C Larkins, Jonathan M Hayes, Martin Kuball.

annealing

• Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
  S. Strite, A. Pelzmann, T. Suski, M. Leszczynski, J. Jun, A. Rockett, Markus Kamp , K. J. Ebeling.

• Surface morphology of as grown and annealed bulk GaN crystals
  G. Nowak, S. Krukowski, I. Grzegory, S. Porowski, J. Baranowski, K. Pakula, J. Zak.

• Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
  A. Pelzmann, S. Strite, A. Dommann, C. Kirchner, Markus Kamp , K. J. Ebeling, A. Nazzal.

• Physical Properties of Bulk GaN Crystals Grown by HVPE
  Yu.V. Melnik, K.V. Vassilevski, I.P. Nikitina, A.I. Babanin, V. Yu. Davydov, V.A. Dmitriev.

• Electrical Characterization of MOVPE-Grown p-Type GaN:Mg Against Annealing Temperature
  Shizuo Fujita, Mitsuru Funato, Doo-Cheol Park, Yoshifumi Ikenaga, Shigeo Fujita.

anomalous

• High-temperature structural behavior of Ni/Au Contact on GaN(0001)
  Chong Cook Kim, Jong Kyu Kim, Jong-Lam Lee, Jung Ho Je, Min-Su Yi, Do Young Noh, Y. Hwu, P. Ruterana.

anti-surfactant

• Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant
  H. Hirayama, Y. Aoyagi, S. Tanaka.

Ar and Xe)

• Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
  Hyun Cho, Y.B. Hahn, D.C. Hays, K.B. Jung, S.M. Donovan, C.R. Abernathy, S.J. Pearton, R.J. Shul.

armchair

• GaN Nanotubes
  Seung Mi Lee, Young Hee Lee, Yong Gyoo Hwang, J. Elsner, Dirk Porezag, Thomas Frauenheim.

arsenide-nitrides

• MBE Growth of Nitride-Arsenide Materials for Long Wavelength Optoelectronics
  Sylvia G. Spruytte, Christopher W. Coldren, Ann F. Marshall, Michael C. Larson, James S. Harris.

atomic

• Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  L.-L. Chao, G. S. Cargill III, C. Kothandaraman, D. Cyr, G. Flynn, E. S. Hellman, D. Wiesmann, D. N. E. Buchanan, I. Brener.

atomic force

• Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  Hugues Marchand , J.P. Ibbetson, Paul T. Fini , Peter Kozodoy , S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.

atomic force microscopy

• Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
  A. Petersson, Anders Gustafsson , L. Samuelson, Satoru Tanaka , Yoshinobu Aoyagi.

• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. J. Rosner, G. Girolami, Paul T. Fini , J.P. Ibbetson, S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.

Auger

• Growth and Characterization of B_xGa_1-xN on 6H-SiC (0001) by MOVPE
  C.H. Wei, Z.Y. Xie, J.H. Edgar, K.C. Zeng, J.Y. Lin, H.X. Jiang, C. Ignatiev, J. Chaudhuri, D.N. Braski.

Auger Electron Spectroscopy

• Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy
  Igor Aksenov, Yoshinobu Nakada, Hajime Okumura.

AZ400K solution

• Photoelectrochemical Etching of In_xGa_1-xN
  Hyun Cho, S.M. Donovan, C.R. Abernathy, S.J. Pearton, F. Ren, J. Han, R.J. Shul.

  The keywords used in this indexing have been supplied by the authors.

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  Index last updated Tuesday, January 18, 2005 7:47:43 PM.
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