MIJ-NSR Author Index, Z

M. Zacharias

• Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
  

W. Zagozdzon-Wosik

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  

J. Zak

• Surface morphology of as grown and annealed bulk GaN crystals
  

V.V. Zalamai

• Free excitons in strained MOCVD-grown GaN layers
  

C. Zanotti-Fregonara

• Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  

A. R. A. Zauner

• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals
  
• Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD
  

J. M. Zavada

• Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
  
• Luminescence From Erbium-Doped Gallium Nitride Thin Films
  
• Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
  
• Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitxy
  
• Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE
  
• Photoluminescence Enhancement and Morphological Properties of Carbon Co-Doped GaN:Er
  

A. Zeitouny

• Behavior of W and WSi_x Contact Metallization on n- and p-Type GaN
  

K.C. Zeng

• Growth and Characterization of B_xGa_1-xN on 6H-SiC (0001) by MOVPE
  

A.P. Zhang

• Processing And Device Performance Of GaN Power Rectifiers
  
• Growth and Device Performance of GaN Schottky Rectifiers
  
• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
  
• Surface Conversion Effects in Plasma-Damaged p-GaN
  

L. Zhang

• Structure of MOVPE Deposited AlN on Si(111)
  
• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
  
• Structural Properties of Laterally Overgrown GaN
  
• The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GaN
  
• Surface Conversion Effects in Plasma-Damaged p-GaN
  
• Gallium Nitride Growth Using Diethylgallium Chloride As An Alternative Gallium Source
  
• Fabrication and Characterization of GaN Junction Field Effect Transistors
  
• Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
  
• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
  
• Dislocation Arrangement in a Thick LEO GaN Film on Sapphire
  

N. Zhang

• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  

Rong Zhang

• Structural Properties of Laterally Overgrown GaN
  

R. Zhang

• Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy
  

Rong Zhang

• The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GaN
  
• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
  
• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
  
• Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium Nitride
  
• Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy
  
• Gallium Nitride Growth Using Diethylgallium Chloride As An Alternative Gallium Source
  
• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
  
• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
  

Xiaolong Zhang

• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  

X. Zhang

• The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy
  

Lijie Zhao

• Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
  
• Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
  
• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  

Qiang Zhao

• Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
  
• The Effect of Al in Plasma-Assisted MBE-Grown GaN
  

Y. Zhao

• Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy
  

Zhaoqiang Fang

• Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy
  

Tsvetanka S. Zheleva

• Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates
  
• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  
• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  
• Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
  
• Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  
• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
  
• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
  

Lianxi Zheng

• Surface Morphology of GaN: Flat Versus Vicinal Surfaces
  
• Cubic InGaN Grown by MOCVD
  

Y. D. Zheng

• Structural Properties of Laterally Overgrown GaN
  
• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
  
• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
  
• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
  
• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
  

Y.V. Zhilyaev

• Photoluminescence of FS-GaN Treated in Alcoholic Sulfide Solutions
  

Ling Zhou

• Characteristics of Ti/Pt/Au Ohmic Contacts on p-Type GaN/A1xGA1-xN Superlattices
  

M. Zhou

• Structure of MOVPE Deposited AlN on Si(111)
  

P. Zhou

• TEM Study of Bulk AlN Growth by Physical Vapor Transport
  

Y. G. Zhou

• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
  
• Structural Properties of Laterally Overgrown GaN
  
• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
  
• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
  

C. F. Zhu

• Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
  

J. Zhu

• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
  

L.D. Zhu

• Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN₂
  

D. Zhuang

• Wet Chemical Etching of AlN Single Crystals
  

M. Zielinski

• Zirconium Mediated Hydrogen Outdiffusion from p-GaN
  

K. S. Ziemer

• Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources
  
• Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire
  

D. V. Zimina

• Current status of GaN crystal growth by sublimation sandwich technique
  

R. Zimmermann

• Transient four wave mixing experiments on GaN
  

K. G. Zolina

• Luminescence Spectra Of Superbright Blue and Green InGaN/AlGaN/GaN Light-Emitting Diodes
  

John C. Zolper

• Fabrication and Characterization of GaN Junction Field Effect Transistors
  
• Rapid Thermal Processing of Implanted GaN Up To 1500°C
  
• Behavior of W and WSi_x Contact Metallization on n- and p-Type GaN
  

C.A. Zorman

• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
  
• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  
• Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates
  

A.Q. Zou

• Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor
  

O. Zsebök

• Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
  
• Surface Morphology and Structure of GaN_xAs_1-x
  
• The Effect of Al in Plasma-Assisted MBE-Grown GaN
  

D. Zubia

• Properties of GaN epilayers grown on misoriented sapphire substrates
  
• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  

A.S. Zubrilov

• Strain relaxation in GaN layers grown on porous GaN sublayers
  
• GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  
• GaN p-n Structures Fabricated by Mg Ion Implantation
  
• Optical Properties of Nitride-based Structures Grown on 6H-SiC
  
• AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy
  
• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
  

T. Zywietz

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
  

Index last updated Monday, February 10, 2003 4:39:52 PM.
© 2003 The Materials Research Society