MIJ-NSR Author Index, Y

MIJ-NSR Author Index, Y

M. A. Yagovkina

Direct SIMS Determination of the In_xGa_1-xN Mole Fraction

R. Yakimova

Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy

Nikolai Yakolev

Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates

E. V. Yakovlev

Motoo Yamaguchi

Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Using Tungsten Mask

Shigeo Yamaguchi

S. Yamasaki

Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers

Gye Mo Yang

Hui Yang

Cubic InGaN Grown by MOCVD

J. W. Yang

J. W. Yang

Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?

Nan Yang

Growth of Oriented Thick Films of Gallium Nitride From the Melt

Wei Yang

B.S.Yavich

Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

W. Yeo

Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy

G-C. Yi

Defect Luminescence in Heavily Mg-Doped GaN

Min-Su Yi

J. Yin

Fabrication and Characterization of Metal-Ferroelectric-GaN Structures

P. Yip

Ichiro Yonenaga

Seikoh Yoshida

M. Yoshimoto

Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire

Chang Joo Youn

Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN

Alexander P. Young

The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/sapphire Templates

C. Youtsey

Dry and Wet Etching for Group III-Nitrides

L. S. Yu

Zhonghai Yu

Yohei Yukawa

Mass Transport, Faceting and Behavior of Dislocations in GaN

F. Yun

Preparation of Sapphire for High Quality III-Nitride Growth

A. E. Yunovich

Index last updated Monday, February 10, 2003 4:39:50 PM.
© 2003 The Materials Research Society