MIJ-NSR Author Index, W

B. Wachtendorf

• High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors
  

K. Wada

• Spectroscopic Studies in InGaN Quantum Wells
  

A. Wagner

• Paramagnetic defects in GaN
  

Joachim Wagner

• Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
  
• Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x0.15) Grown by Metal-Organic Chemical Vapor Deposition
  

Mt. Wagner

• Optical properties of electron-irradiated GaN
  
• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
  

V. Wagner

• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  
• HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire Substrates
  
• Localized Epitaxy of GaN by HVPE on patterned Substrates
  

C. Walker

• High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter
  

D. Walker

• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  

L. Walker

• Wet Chemical Etching of AlN Single Crystals
  

W. Walukiewicz

• Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
  

W.R. Wampler

• The Behavior of Ion-Implanted Hydrogen in Gallium Nitride
  
• Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium
  
• Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
  
• Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN
  

Du Wang

• GaN m-i-n LED grown by MOVPE
  

F. Wang

• Integration of PLZT and BST Family Oxides with GaN
  

Kai Wang

• High Temperature Elastic Constant Prediction of Some Group III-Nitrides
  
• Thermal Residual Stress Modeling in AlN and GaN Multilayer Samples
  

Rungjun Wang

• Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates
  
• Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
  

S-Q. Wang

• High Quality Hydrothermal ZnO Crystals
  
• Focused Ion Beam Etching of GaN
  

W. Wang

• The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy
  

W. I. Wang

• High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer
  

W.N.Wang

• Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
  

Xiaohui Wang

• GaN m-i-n LED grown by MOVPE
  

Y.T. Wang

• Cubic InGaN Grown by MOCVD
  

J. Washburn

• The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
  
• Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al_xGa_1-xN Layers Grown by MOCVD
  
• TEM Study of Defects in Laterally Overgrown GaN Layers
  
• Mg Segregation, Difficulties of P-Doping in GaN
  

K. Waters

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  

G.D. Watkins

• Spectroscopy of Proton Implanted GaN
  

D. Weber

• Transient four wave mixing experiments on GaN
  

Eicke R. Weber

• Effect of internal absorption on cathodoluminescence from GaN
  
• The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
  

W.J. Weber

• Effects of Oxygen Ion Implantation in Gallium Nitride
  

Richard T. Webster

• Physics-Based Intrinsic Model for AlGaN/GaN HEMTs
  

C.H. Wei

• Growth and Characterization of B_xGa_1-xN on 6H-SiC (0001) by MOVPE
  
• Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
  

N Weimann

• High Frequency AlGaN/GaN MODFET's
  

M.G. Weinstein

• Spectroscopy of Proton Implanted GaN
  

Ralf Weissenborn

• Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes
  

B. W. Wessels

• Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy
  
• Defect Luminescence in Heavily Mg-Doped GaN
  

B.W.Wessels

• On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation
  

T. Wethkamp

• AlGaN-Based Bragg Reflectors
  

C. Wetzel

• Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
  
• Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures
  
• Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
  
• On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  

J. L. Weyher

• Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD
  
• Highly Chemical Reactive Ion Etching of Gallium Nitride
  

I.H. White

• Focused Ion Beam Etching of GaN
  

Madeleine White

• Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content
  

A.E. Wickenden

• Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
  
• GaN Decomposition in Ammonia
  
• Enhanced GaN Decomposition At MOVPE Pressures
  

F. Widmann

• Piezoelectric Properties of GaN Self-Organized Quantum Dots
  
• Evidence of 2D-3D transition during the first stages of GaN growth on AlN
  

D. Wiesmann

• Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  
• Growth of Ga-face and N-face GaN films using ZnO Substrates
  
• ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
  
  

A. Wieszt

• Current limitation after pinch-off in AlGaN/GaN FETs
  

Christine C. Willan

• Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
  

J. S. Williams

• The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films
  

C.G. Willison

• Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
  
• Fabrication and Characterization of GaN Junction Field Effect Transistors
  

K. Wilmers

• AlGaN-Based Bragg Reflectors
  

R. G. Wilson

• High Resistivity Al_xGa_1-xN Layers Grown by MOCVD
  
• Growth and Device Performance of GaN Schottky Rectifiers
  

R. G. Wilson

• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  
• Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitxy
  
• Processing And Device Performance Of GaN Power Rectifiers
  
• Spectroscopy of Proton Implanted GaN
  
• Luminescence From Erbium-Doped Gallium Nitride Thin Films
  
• Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structure
  
• Photoluminescence Enhancement and Morphological Properties of Carbon Co-Doped GaN:Er
  
• Properties and Effects of Hydrogen in GaN
  
• Rapid Thermal Processing of Implanted GaN Up To 1500°C
  
• Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE
  

S. Wilson

• Comparative Growth of AlN on Singular and Off-Axis 6H and 4h-SiC by MOCVD
  

A. M. Witowski

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  

Hartmut P. Witte

• Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
  
• Defect States in SiC/GaN -and SiC/GaN /AlGaN- Heterostructures Characterized by Admittance and Photocurrent Spectroscopy
  
• Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs
  

E. Woelk

• MOCVD Equipment for Recent Developments towards the Blue and Green Solid State Laser
  

Andreas Wohlfart

• Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors
  

M. Wojdak

• High quality GaN films - growth and properties
  
• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
  

D.J. Wolford

• Temperature Dependence of Bound Exciton Emissions in GaN
  

A. A. Wolfson

• Current status of GaN crystal growth by sublimation sandwich technique
  

John A Woollam

• Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman Spectroscopy
  

A.M. Wowchak

• Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy
  

Michael Wraback

• Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
  
• Properties of Epitaxial ZnO Thin Films for GaN and Related Applications
  

Alan F. Wright

• Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
  
• Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN
  

M. Wroblewski

• Recent Results in the Crystal Growth of GaN at High N₂ Pressure
  

H. Wu

• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
  

Huasheng Wu

• Surface Morphology of GaN: Flat Versus Vicinal Surfaces
  

J. Wu

• Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor Deposition
  

Ming Fang Wu

• Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content
  
• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  

Shangli Wu

• Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
  
• Physics-Based Intrinsic Model for AlGaN/GaN HEMTs
  

X.H. Wu

• Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
  

P. Wyder

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  

Andrzej Wysmolek

• AMMONO method of BN, AlN and GaN synthesis and crystal growth.
  

Index last updated Monday, February 10, 2003 4:39:47 PM.
© 2003 The Materials Research Society