MIJ-NSR Author Index, V

MIJ-NSR Author Index, V

M. Vaille

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
Alternative N precursors and Mg doped GaN grown by MOVPE

P. I. Vakhutinsky

Integration of PLZT and BST Family Oxides with GaN

E Valcheva

Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'

P. Valvin

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

J.M. Van Hove

Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy

W Van der Stricht

Chris G. Van de Walle

W. J.P. van Enckevort

Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD

J. M. Van Hove

Jef Van Landuyt

Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content

P. G. Van Patten

Visible Luminescent Activation of Amorphous AlN:Eu Thin-Film Phosphors with Oxygen

M. van Schilfgaarde

Computational Materials Science, An Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences

AndrŽ Vantomme

B. Van Zeghbroeck

K.V. Vassilevski

Rama Venkat

Modeling GaN Growth by Plasma Assisted MBE in the Presence of Low Mg Flux

T. Venkatesan

Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices

Philippe Vennegues

Philippe Vermaut

A. Vescan

Current limitation after pinch-off in AlGaN/GaN FETs

G. D. Via

Electrical Profiles in GaN/Al₂O₃ Layers with Conductive Interface Regions

R. Vianden

C. Villar

Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy

R. D. Vispute

Yu. A. Vodakov

Current status of GaN crystal growth by sublimation sandwich technique

P. Vogl

D. Volm

Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN

Ulrich von Gfug

Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy

M. Voos

Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature

Index last updated Monday, February 10, 2003 4:39:45 PM.
© 2003 The Materials Research Society