MIJ-NSR Author Index, T

Y.T.Rebane

• Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
  

A. Tabata

• Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature
  

Koichi Tachibana

• Emission at 247 nm from GaN Quantum Wells Grown by MOCVD
  

Kazuyuki Tadatomo

• Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via MOVPE
  

T. Takeuchi

• Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
  
• Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes
  
• On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  
• Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures
  
• Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
  

W. Taki

• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  

R. A. Talalaev

• Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
  
• Novel approach to simulation of group-III nitrides growth by MOVPE
  
• Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
  

Masao Tamura

• Cubic GaN Heteroepitaxy on Thin-SiC Covered Si(001)
  

H. H. Tan

• The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films
  

Leng Seow Tan

• Activation of Beryllium-Implanted GaN by Two-Step Annealing
  

Toshiyuki Tanahashi

• Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
  

M. Tanaka

• Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire
  

Satoru Tanaka

• Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
  
• Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant
  

L. Tapfer

• Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
  

H. Teisseyre

• Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
  

Henryk Temkin

• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
  

Shinji Terao

• High-Quality Al_xGa_1-xN Using Low Temperature-Interlayer and its Application to UV Detector
  

A. L. Ter-Martirosyan

• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  

C. Terrill

• Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  

H. Tews

• Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  

Yuta Tezen

• Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers
  

Myko Thaik

• Luminescence From Erbium-Doped Gallium Nitride Thin Films
  
• Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitxy
  

S. Thevuthasan

• Effects of Oxygen Ion Implantation in Gallium Nitride
  

Alan G. Thompson

• The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
  

Margarita P. Thompson

• Temperature Effect on the Quality of AlN Thin Films
  

C. Thomsen

• Influence of Doping on the Lattice Dynamics GaN
  

D.B. Thomson

• Ni/Si-Based Contacts To GaN: Thermally Activated Structural Transformations Leading To Ohmic Behavior
  
• Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN
  
• Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
  
• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
  
• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
  
• Characterization of Be-Implanted GaN Annealed At High Temperatures
  
• Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
  

K. Thonke

• Current limitation after pinch-off in AlGaN/GaN FETs
  

J.V. Thordson

• Surface Morphology and Structure of GaN_xAs_1-x
  
• Optical Properties of GaNAs Grown by MBE
  
• The Effect of Al in Plasma-Assisted MBE-Grown GaN
  
• Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
  

Robert L. Thornton

• Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
  

E. J. Thrush

• Study of GaN films grown by metalorganic chemical vapour deposition
  
• MOVPE growth optimization of high quality InGaN films.
  

Michael D. Tiberi

• Electron Beam Pumped MQW InGaN/GaN Laser
  

Ivan Tiginyanu

• Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
  

I.M. Tiginyanu

• Free excitons in strained MOCVD-grown GaN layers
  

J. M. G. Tijero

• Yellow luminescence in Mg-doped GaN
  
• Yellow Band and Deep levels in Undoped MOVPE GaN.
  

A. Titkov

• Strain relaxation in GaN layers grown on porous GaN sublayers
  

Tomas E Tiwald

• Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman Spectroscopy
  

T.E. Tiwald

• Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
  

M. Tlaczala

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  

K. Tomsia

• Zirconium Mediated Hydrogen Outdiffusion from p-GaN
  

K.Y. Tong

• Characterization of Flicker Noise in GaN Based Modfets At Low Drain Bias
  
• Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions
  

Shuk Yin Tong

• Surface Morphology of GaN: Flat Versus Vicinal Surfaces
  

V. J. B. Torres

• Theoretical Studies Of Hydrogen Passivated Substitutional Magnesium Acceptor In Wurzite GaN
  

John T Torvik

• A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
  

M. Toth

• Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaN
  

K.M. Tracy

• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
  

Giampiero Traetta

• Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
  

C. A. Tran

• The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
  
• Time-Resolved Spectroscopy of InGaN
  

J-F Treguer

• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  

Kwok-On Tsang

• Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
  

Kotaro Tsubaki

• Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors
  

H. Tsuda

• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  

Denis V. Tsvetkov

• Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
  
• Strain relaxation in GaN layers grown on porous GaN sublayers
  
• GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  
• Optical Properties of Nitride-based Structures Grown on 6H-SiC
  

Charles W. Tu

• The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/sapphire Templates
  
• Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy
  

S. Tungasmita

• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
  

B. Turk

• High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer
  

A. N. Turkin

• Luminescence Spectra Of Superbright Blue and Green InGaN/AlGaN/GaN Light-Emitting Diodes
  
• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  
• Avalanche Breakdown Luminescence of InGaN/AlGaN/GaN Heterostructures
  
• Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Multiple Quantum Wells
  
• Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes
  

M.E. Twigg

• Enhanced GaN Decomposition At MOVPE Pressures
  

Index last updated Monday, February 10, 2003 4:39:40 PM.
© 2003 The Materials Research Society