MIJ-NSR Author Index, S

Huang Sa

• Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
  

M. L. Sadowski

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  

Tadashi Saitoh

• Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors
  

T. Sakaguchi

• Characteristic Temperature Estimation for GaN-Based Lasers
  

S. Sakai

• The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy
  

A. V. Sakharov

• Heterostructure for UV LEDs Based on Thick AlGaN Layers
  

T. Salagaj

• The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
  

A. Saleh

• Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE
  

A. Salvador

• Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC
  
• Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE
  

G. Salviati

• Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  
• Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire
  

Anand V Sampath

• Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy
  
• Generation Recombination Noise in GaN Photoconductors
  
• A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire Substrates
  

Y. Samson

• Evidence of 2D-3D transition during the first stages of GaN growth on AlN
  

L. Samuelson

• Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
  

F. J. Sánchez

• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
  
• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  
• Yellow luminescence in Mg-doped GaN
  
• Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  
• XPS study of Au/GaN and Pt/GaN contacts
  
• Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
  
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  
• Yellow Band and Deep levels in Undoped MOVPE GaN.
  

M. A. Sánchez-García

• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
  
• Yellow luminescence in Mg-doped GaN
  
• Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  
• Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
  
• Yellow Band and Deep levels in Undoped MOVPE GaN.
  

M.A. Sanchez-Garcia

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  

H. Sands

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions
  

A.Sanz. Hervas

• Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
  

G. V. Saparin

• Current status of GaN crystal growth by sublimation sandwich technique
  

Wendy Lynn Sarney

• TEM Study of Bulk AlN Growth by Physical Vapor Transport
  
• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  
• TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
  

R. Sauer

• Temperature Distribution in InGaN-MQW LEDs Under Operation
  

Nobuhiko Sawaki

• Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Using Tungsten Mask
  
• Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
  
• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  

Adam W. Saxler

• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
  
• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  

S. Schad

• Temperature Distribution in InGaN-MQW LEDs Under Operation
  

William J Schaff

• Evidence from EELS of Oxygen in the Nucleation Layer of an MBE Grown III-N HEMT
  
• High Frequency AlGaN/GaN MODFET's
  
• Research on GaN MODFET's
  
• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
  

M. Schauler

• GaN based LED's with different recombination zones
  

M. Scheffler

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
  

M.P. Scheglov

• Macro- and microstrains in MOCVD-grown GaN
  

H.P.D. Schenk

• Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
  

M. Scherer

• Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
  
• Temperature Distribution in InGaN-MQW LEDs Under Operation
  

J. J. Schermer

• Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD
  

J. F. Schetzina

• High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
  

J.F. Schetzina

• Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
  
• Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  
• A Critical Comparison Between MBE and MOVPE Growth of III-V Nitride Heterostructures for Optoelectronic Device Applications
  
• UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
  
• Solar-Blind AlGaN Heterostructure Photodiodes
  
• Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys
  
• Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  

M. Schienle

• Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  

Stefanie Schiestel

• Wet Etching of Ion-Implanted GaN Crystals by AZ-400K Photoresist
  

D. Schikora

• Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature
  
• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
  
• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
  
• Mechanisms of Optical Gain in Cubic GaN and InGaN
  

T.J. Schmidt

• Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
  
• Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
  

Torsten K. Schmidtling

• Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine
  

D. Schmitz

• MOCVD Equipment for Recent Developments towards the Blue and Green Solid State Laser
  
• High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors
  
• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
  

L. F. Schneemeyer

• ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
  
  

O. Schoen

• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
  
• Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
  
• High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors
  

Bernd Schoettker

• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
  

F. Scholz

• Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
  
• Radiative Lifetime of Excitons in GaInN/GaN Quantum Wells
  
• Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
  
• Defect States in SiC/GaN -and SiC/GaN /AlGaN- Heterostructures Characterized by Admittance and Photocurrent Spectroscopy
  
• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  
• Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
  
• Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman Spectroscopy
  
• The role of piezoelectric fields in GaN-based quantum wells
  

B. Schottker

• Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs
  
• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
  
• Mechanisms of Optical Gain in Cubic GaN and InGaN
  

L.J. Schowalter

• Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
  
• Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates
  

E.F. Schubert

• Fabrication of Smooth GaN-Based Laser Facets
  
• Efficient Acceptor Activation in Al_xGa_1-xN/GaN Doped Superlattices
  

M. Schubert

• Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
  
• Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman Spectroscopy
  
• Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
  

J. Schuck

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  

A. Schultz

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  

M. Schurman

• The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
  
• Temperature Dependence of Bound Exciton Emissions in GaN
  

D. Schwall

• High Quality Hydrothermal ZnO Crystals
  

U. Schwarz

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  

Veit Schwegler

• Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
  
• Temperature Distribution in InGaN-MQW LEDs Under Operation
  
• GaN Homoepitaxy for Device Applications
  

J. Scofield

• Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium-Doped GaN
  

C. J. Scozzie

• Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
  

C.H. Seager

• The Behavior of Ion-Implanted Hydrogen in Gallium Nitride
  
• Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
  
• Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN
  

B. Segall

• Theoretical Study of ZnO and Related Mg_xZn_1-xO Alloy Band Structures
  

O.P. Seifert

• Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
  

R. Seitz

• Temperature behaviour of the yellow emission in GaN
  

J.A. Sekhar

• Rapid Thermal Processing of Implanted GaN Up To 1500°C
  

H. Selke

• Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
  

Olga Semchinova

• Electron Beam Pumping in Nitride Vertical Cavities With GaN/A10.25Ga0.75 Bragg Reflectors
  

M. Senoh

• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
  

Jae Myung Seo

• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
  
• Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitxy
  
• Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
  

Tae-Yeon Seong

• High-Quality Non-Alloyed Pt Ohmic Contacts to p-Type GaN Using Two-step Surface Treatment
  
• Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy
  

B.E. Sernelius

• Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  
• Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
  

J.J. Serrano

• Yellow luminescence in Mg-doped GaN
  

George A. Seryogin

• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
  

K. Seth

• A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire Substrates
  

Sean M. Seutter

• Surface Morphology of GaN: Flat Versus Vicinal Surfaces
  

M. Seyboth

• Temperature Distribution in InGaN-MQW LEDs Under Operation
  
• Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
  

F.Shahedipour

• On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation
  

W. Shan

• Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
  

N. A. Shapiro

• The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
  

A.K. Sharma

• Crystal Structure and Defects in Nitrogen-Deficient GaN
  

R. P. Sharma

• Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
  

B. Shen

• Structural Properties of Laterally Overgrown GaN
  
• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
  
• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
  
• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
  
• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
  

H. Shen

• Luminescence From Erbium-Doped Gallium Nitride Thin Films
  
• Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
  
• Properties of Epitaxial ZnO Thin Films for GaN and Related Applications
  

K. Shenai

• Material Properties of GaN in the Context of Electronic Devices
  

A. Sher

• Computational Materials Science, An Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences
  

Y.M. Sherniakov

• Heterostructure for UV LEDs Based on Thick AlGaN Layers
  

Y. Shi

• Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates
  
• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
  
• New Technique for Sublimation Growth of AlN Single Crystals
  
• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
  
• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
  
• Structural Properties of Laterally Overgrown GaN
  

O. Shigiltchoff

• Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
  

R. Shih

• Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor
  

M. Shimizu

• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  

H. Shin

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  

M. Shin

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  
• High Resistivity Al_xGa_1-xN Layers Grown by MOCVD
  
• Schottky Diodes on MOCVD Grown AlGaN Films.
  

Y. Shiraki

• Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor Deposition
  

A. P. Shkurko

• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  

Natalie M. Shmidt

• Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
  
• Macro- and microstrains in MOCVD-grown GaN
  

Y.G.Shreter

• Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
  

R. J. Shul

• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
  
• Photoelectrochemical Etching of In_xGa_1-xN
  
• Behavior of W and WSi_x Contact Metallization on n- and p-Type GaN
  
• A Review of Dry Etching of GaN and Related Materials
  
• Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
  
• Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
  
• Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
  
• Fabrication and Characterization of GaN Junction Field Effect Transistors
  
• Surface Conversion Effects in Plasma-Damaged p-GaN
  
• Rapid Thermal Processing of Implanted GaN Up To 1500°C
  
• Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structure
  
• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  
• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
  

Michael S. Shur

• Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?
  
• Pyroelectric and Piezoelectric Properties of GaN-Based Materials
  
• Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates
  

Yuriy Shusterman

• Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates
  
• Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
  

H. Siegle

• Influence of Doping on the Lattice Dynamics GaN
  

T. Siegrist

• ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
  
  

L. Sierzputowski

• AMMONO method of BN, AlN and GaN synthesis and crystal growth.
  

J. Sik

• Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
  

John Silcox

• Evidence from EELS of Oxygen in the Nucleation Layer of an MBE Grown III-N HEMT
  

C. Silien

• XPS study of Au/GaN and Pt/GaN contacts
  

J. Simon

• Piezoelectric Properties of GaN Self-Organized Quantum Dots
  
• Strong Piezoelectric Effects in Unstrained GaN Quantum Wells
  
• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.
  

D. Simonian

• High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer
  

T. Simonsmeier

• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
  

Raj Singh

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  

R.K. Singh

• Rapid Thermal Processing of Implanted GaN Up To 1500°C
  

Nathan Sipe

• Modeling GaN Growth by Plasma Assisted MBE in the Presence of Low Mg Flux
  

M. Skowronski

• Schottky Diodes on MOCVD Grown AlGaN Films.
  
• High Resistivity Al_xGa_1-xN Layers Grown by MOCVD
  
• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  

B. J.. Skromme

• Optical Activation Behavior of Ion Implanted Acceptor Species in GaN
  
• Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
  

Y.K. Skyasyrsky

• Electron Beam Pumped MQW InGaN/GaN Laser
  

G.A. Slack

• Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
  
• Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates
  

Nikolai B. Smirnov

• Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
  
• Schottky Diodes on MOCVD Grown AlGaN Films.
  
• GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
  

A. R. Smith

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  
• Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
  

D. J. Smith

• Properties of InGaN deposited on Glass at Low Temperature
  

L. Smith

• Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
  

S K Manson-Smith

• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  

Scott A. Smith

• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
  

T.P. Smith

• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
  

I. P. Smorchkova

• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
  

J.C. Soares

• RBS Lattice Site Location and Damage Recovery Studies on Er Implanted GaN
  

Ulf Södervall

• The Effect of Al in Plasma-Assisted MBE-Grown GaN
  
• Surface Morphology and Structure of GaN_xAs_1-x
  

Reiko Soejima

• Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
  

Eunsoon Oh

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  

A. Sohmer

• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  

I. A. Sokolov

• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  

V.A. Soloviev

• GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  
• Optical Properties of Nitride-based Structures Grown on 6H-SiC
  
• GaN p-n Structures Fabricated by Mg Ion Implantation
  

D. J. Somerford

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  

Takao Someya

• Emission at 247 nm from GaN Quantum Wells Grown by MOCVD
  

C. Sone

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  

Hiroki Sone

• Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Using Tungsten Mask
  

C.Y. Song

• Spectroscopy of Proton Implanted GaN
  

J.J. Song

• Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
  
• Comparison Study of Structural and Optical Properties of In_xGa_1-xN/GaN Quantum Wells With Different In Compositions
  
• Microstructure-based Lasing in GaN/AlGaN Separate Confinement Heterostructures
  
• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
  
• Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
  
• Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
  
• Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
  

T. Sota

• Spectroscopic Studies in InGaN Quantum Wells
  

D. Sowada

• Determination of the dislocation densities in GaN on c-oriented sapphire
  

J.-M. Spaeth

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  
• Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
  
• Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
  
• DLTS Characterization of Defects Introduced During Sputter Deposition of Au Schottky Contacts on n-GaN
  

J. Spear

• Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
  

Jim Speck

• Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
  
• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  
• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
  
• Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
  
• Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
  
• Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
  
• Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  
• Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
  

M.G. Spencer

• Comparative Growth of AlN on Singular and Off-Axis 6H and 4h-SiC by MOCVD
  
• TEM Study of Bulk AlN Growth by Physical Vapor Transport
  

R. Sporken

• XPS study of Au/GaN and Pt/GaN contacts
  
• Metal/GaN Contacts Studied by Electron Spectroscopies
  

James A Sprague

• Wet Etching of Ion-Implanted GaN Crystals by AZ-400K Photoresist
  

Sylvia G. Spruytte

• MBE Growth of Nitride-Arsenide Materials for Long Wavelength Optoelectronics
  

P. Srinivasan

• Solar-Blind AlGaN Heterostructure Photodiodes
  

M. Städele

• Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
  

R. A. Stall

• The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
  

C. Stampfl

• Doping of AlGaN Alloys
  

M. Stavola

• Spectroscopy of Proton Implanted GaN
  

A.J. Steckl

• Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium-Doped GaN
  
• Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
  
• Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE
  
• Focused Ion Beam Micromachining of GaN Photonic Devices
  

Jens Stemmer

• Electron Beam Pumping in Nitride Vertical Cavities With GaN/A10.25Ga0.75 Bragg Reflectors
  

U. Stempfle

• Temperature Distribution in InGaN-MQW LEDs Under Operation
  

M. V. Stepanov

• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  

S. Stepanov

• Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
  
• Strain relaxation in GaN layers grown on porous GaN sublayers
  
• Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
  

R. Stepniewski

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  

G. Steude

• Optical Investigations of AlGaN on GaN Epitaxial Films
  

C.D. Stinespring

• Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire
  
• Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources
  

Stuart R. Stock

• Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
  

D.A. Stocker

• Fabrication of Smooth GaN-Based Laser Facets
  

Arno Stoetzler

• Photoluminescence Characterization of Mg Implanted GaN
  

V. A. Stoica

• An Investigation of Long and Short Time-Constant Persistent Photoconductivity in Undoped GaN Grown by RF-Plasma Assisted Molecular Beam Epitaxy
  

W. Stolz

• Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
  

Donald S Stone

• Dislocation Arrangement in a Thick LEO GaN Film on Sapphire
  

H. L. Stormer

• High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer
  

Arno Stötzler

• Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes
  

G. Strauch

• MOCVD Equipment for Recent Developments towards the Blue and Green Solid State Laser
  
• Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
  

S. Strauf

• Studies on Carbon As Alternative p-Type Dopant for GaN
  

U. Strauss

• Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  

T. Streibl

• Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  

S. Strite

• Direct SIMS Determination of the In_xGa_1-xN Mole Fraction
  
• Properties of InGaN deposited on Glass at Low Temperature
  
• Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
  
• Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
  

D. N. Stroganov

• Direct SIMS Determination of the In_xGa_1-xN Mole Fraction
  

Michael A. Stroscio

• Phonon Dynamics and Lifetimes of AlN and GaN Crystallites
  

Horst Strunk

• Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire
  

H. P. Strunk

• Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  
• Pinholes, Dislocations and Strain Relaxation in InGaN
  
• Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
  
• Determination of the dislocation densities in GaN on c-oriented sapphire
  

V. S. Strykanov

• In-depth Analysis of the Impurities in GaN
  

M. Stutzmann

• PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
  
• Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
  
• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
  
• AlGaN-Based Bragg Reflectors
  
• Raman characterization of the optical phonons in Al_xGa_1-xN layers grown by MBE and MOCVD
  

B. Suchanek

• Paramagnetic defects in GaN
  
• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
  
• High quality GaN films - growth and properties
  
• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  

T. Sugahara

• The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy
  

Vitaly A. Sukhoveyev

• GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
  

G. J. Sullivan

• Contact Issues for GaN Technology
  

M. Sumiya

• Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire
  

A. Sun

• Preparation of Sapphire for High Quality III-Nitride Growth
  

Jingxi Sun

• The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GaN
  

W. Sun

• Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures
  

Yuejun Sun

• Activation of Beryllium-Implanted GaN by Two-Step Annealing
  

C. Surya

• Characterization of Flicker Noise in GaN Based Modfets At Low Drain Bias
  
• Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions
  
• Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
  

M. Suscavage

• Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
  
• High Quality Hydrothermal ZnO Crystals
  

T. Suski

• Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
  
• Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
  
• GaN Homoepitaxy for Device Applications
  
• The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films
  

A. Sutandi

• Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
  

Joe Suzuki

• High-Temperature Reliability of GaN Electronic Devices
  

A. Svane

• Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects
  
• Native defects and carbon impurity in cubic BN
  

E. Svedberg

• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
  
• Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
  

F Sweeney

• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  

Paul M. Sweeney

• Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
  

W. Swider

• TEM Study of Defects in Laterally Overgrown GaN Layers
  
• Mg Segregation, Difficulties of P-Doping in GaN
  
• The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
  
• Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al_xGa_1-xN Layers Grown by MOCVD
  

S. Syed

• High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer
  

V. Syganow

• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  

N.N. Syrbu

• Free excitons in strained MOCVD-grown GaN layers
  

Index last updated Monday, February 10, 2003 4:39:38 PM.
© 2003 The Materials Research Society