MIJ-NSR Author Index, R

S.D. Raevskii

• Photoluminescence of FS-GaN Treated in Alcoholic Sulfide Solutions
  

P. Rajagopal

• Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
  
• Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates
  
• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  
• Photoluminescence Characterization of Mg Implanted GaN
  
• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
  
• Advanced PENDEOEPITAXY(TM) of GaN and Al_xGa_1-xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
  
• Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
  

S.E. Ralph

• Temperature Dependence of Bound Exciton Emissions in GaN
  

Vidhya Ramachandran

• TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
  
• Surface Activity of Magnesium During GaN Molecular Beam Epitaxial Growth
  
• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  

Arun Ramakrishnan

• Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
  
• Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x0.15) Grown by Metal-Organic Chemical Vapor Deposition
  

M. S. Ramm

• Current status of GaN crystal growth by sublimation sandwich technique
  
• Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
  
• The role of gaseous species in group-III nitride growth
  

M. G. Ramm

• Current status of GaN crystal growth by sublimation sandwich technique
  

Sergey N. Rashkeev

• Electronic Structure and Optical Properties of ZnGeN₂
  

M.G. Rastegaeva

• Fabrication of GaN mesa structures
  

V.V. Ratnikov

• Macro- and microstrains in MOCVD-grown GaN
  
• Strain relaxation in GaN layers grown on porous GaN sublayers
  

V. V. Ratnikov

• Current status of GaN crystal growth by sublimation sandwich technique
  

M. Razeghi

• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  
• Study of Thin Films Polarity of Group III Nitrides
  

Fernando A. Reboredo

• Novel Defect Complexes and Their Role in p-Type Doping of GaN
  

J.M. Redwing

• Fabrication of Smooth GaN-Based Laser Facets
  
• Schottky Diodes on MOCVD Grown AlGaN Films.
  
• AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties
  
• Current limitation after pinch-off in AlGaN/GaN FETs
  

Robert R. Reeber

• Thermal Residual Stress Modeling in AlN and GaN Multilayer Samples
  
• High Temperature Elastic Constant Prediction of Some Group III-Nitrides
  

Eric Rehder

• Structure of MOVPE Deposited AlN on Si(111)
  

Denis Remiens

• Prism Coupling as a Non-Destructive Tool for Optical Characterization of (Al,Ga) Nitride Compounds
  

B. G. Ren

• Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
  
• Evidence for Shallow Acceptor Levels in MBE Grown GaN
  

F. Ren

• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
  
• Photoelectrochemical Etching of In_xGa_1-xN
  
• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  
• Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structure
  
• Properties and Effects of Hydrogen in GaN
  
• Behavior of W and WSi_x Contact Metallization on n- and p-Type GaN
  
• Growth and Device Performance of GaN Schottky Rectifiers
  
• Luminescence From Erbium-Doped Gallium Nitride Thin Films
  
• Surface Conversion Effects in Plasma-Damaged p-GaN
  
• A Review of Dry Etching of GaN and Related Materials
  
• Processing And Device Performance Of GaN Power Rectifiers
  

M. A. Renucci

• Raman Determination of the Phonon Deformation Potentials in -GaN
  
• Raman study of Ga_1-xAl_xN solid solutions
  

M.A. Renucci

• Thermal Stability of GaN Investigated by Raman Scattering
  
• Raman study of resonance effects in Ga_1-xAl_xN solid solutions
  

M.A. Reshchikov

• Defect Luminescence in Heavily Mg-Doped GaN
  

M. Reshichkov

• Preparation of Sapphire for High Quality III-Nitride Growth
  

E.E. Reuter

• Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium Nitride
  

D.C. Reynolds

• High Quality Hydrothermal ZnO Crystals
  

L. Salamanca-Riba

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  
• TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
  
• TEM Study of Bulk AlN Growth by Physical Vapor Transport
  

P. Riblet

• Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
  

Hugh H Richardson

• Optical Properties of Manganese Doped Amorphous and Crystalline Aluminum Nitride Films
  
• Visible Luminescent Activation of Amorphous AlN:Eu Thin-Film Phosphors with Oxygen
  

Andreas Richter

• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
  

W. Richter

• AlGaN-Based Bragg Reflectors
  
• Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine
  

H. Riechert

• Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  
• Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
  

D.J. Rieger

• Rapid Thermal Processing of Implanted GaN Up To 1500°C
  

W. Rieger

• PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
  
• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
  

T. Riemann

• Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
  
• Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
  
• Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
  

S. A. Ringel

• Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
  

A. Rizzi

• Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
  

J. C. Roberts

• Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
  
• Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
  

Lawrence Robins

• Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
  

A. Rockett

• Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
  

A. D. Roenkov

• Current status of GaN crystal growth by sublimation sandwich technique
  

Wolfram Rogge

• Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors
  

Juan C Rojo

• Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates
  

Linda T. Romano

• Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
  
• Dry and Wet Etching for Group III-Nitrides
  
• Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
  

C. Ronning

• Characterization of Be-Implanted GaN Annealed At High Temperatures
  
• Photoluminescence Characterization of Mg Implanted GaN
  

J.M. Rorison

• Focused Ion Beam Etching of GaN
  

M.F. Rosamond

• Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy
  

A.M. Roskowski

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  

S. J. Rosner

• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  

U. Rössner

• Epitaxial growth of cubic GaN and AlN on Si(001)
  

T. Rotter

• Determination of the dislocation densities in GaN on c-oriented sapphire
  

J. L. Rouvière

• Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
  
• MOVPE Growth and Structural Characterization of Al_xGa_1-xN
  
• Epitaxial growth of cubic GaN and AlN on Si(001)
  
• Evidence of 2D-3D transition during the first stages of GaN growth on AlN
  

P. Paul Ruden

• New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors
  
• Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
  
• Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
  
• Ensemble Monte Carlo Study of Electron Transport in Bulk InN
  
• Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
  
• Monte Carlo Simulation of Hall Effect in n-Type GaN
  

D. Rudloff

• Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
  
• Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
  
• Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
  

W. W. Rühle

• Transient four wave mixing experiments on GaN
  
• Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  

S. Rushworth

• Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
  

Pierre Ruterana

• Prism Coupling as a Non-Destructive Tool for Optical Characterization of (Al,Ga) Nitride Compounds
  
• Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC
  
• Formation and Stability of the Prismatic Stacking Fault in Wurtzite (Al,Ga,In) Nitrides
  
• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
  
• A TEM Study of GaN Grown by ELO on (0001) 6H-SiC
  
• The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride
  
• High-temperature structural behavior of Ni/Au Contact on GaN(0001)
  
• Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE
  

S. Ruvimov

• Contact Issues for GaN Technology
  

A. Rybaltowski

• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  

P.L. Ryder

• Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
  

Index last updated Monday, February 10, 2003 4:39:33 PM.
© 2003 The Materials Research Society