MIJ-NSR Author Index, P

P. Srinivasan

• UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
  

K. Pakula

• Paramagnetic defects in GaN
  
• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
  
• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  
• Surface morphology of as grown and annealed bulk GaN crystals
  
• High quality GaN films - growth and properties
  

Nezih Pala

• Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates
  

M. Palczewska

• Paramagnetic defects in GaN
  
• AMMONO method of BN, AlN and GaN synthesis and crystal growth.
  
• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
  

J. Pamulapati

• Properties of Epitaxial ZnO Thin Films for GaN and Related Applications
  
• Luminescence From Erbium-Doped Gallium Nitride Thin Films
  

M. Panek

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  

J. I. Pankove

• High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter
  
• A Perspective on the GaN Injection Laser
  
• A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
  

Sokrates T. Pantelides

• Novel Defect Complexes and Their Role in p-Type Doping of GaN
  

Siegfried Panzer

• Electron Beam Pumping in Nitride Vertical Cavities With GaN/A10.25Ga0.75 Bragg Reflectors
  

N. Parikh

• Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN
  
• Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  

Olivier Parillaud

• HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire Substrates
  
• Localized Epitaxy of GaN by HVPE on patterned Substrates
  

J. Parisi

• Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
  

Doo-Cheol Park

• Electrical Characterization of MOVPE-Grown p-Type GaN:Mg Against Annealing Temperature
  

H. Park

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  

J. Park

• TEM Study of Defects in Laterally Overgrown GaN Layers
  

Mi-Ran Park

• Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment
  

Seong-Ju Park

• Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment
  
• High-Quality Non-Alloyed Pt Ohmic Contacts to p-Type GaN Using Two-step Surface Treatment
  

Y. Park

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  

C.A. Parker

• Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
  

P.P.Paskov

• Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells
  

Tanya Milkova Paskova

• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
  
• Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
  
• Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
  

B. Paszkiewicz

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  

R. Paszkiewicz

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  

A. Patel

• Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
  

A.J. Paul

• Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
  

D. Pavlidis

• Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
  
• Material Properties of GaN in the Context of Electronic Devices
  
• Free excitons in strained MOCVD-grown GaN layers
  

Vladimir F. Pavlov

• Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
  

E.A. Payzant

• New Technique for Sublimation Growth of AlN Single Crystals
  

S.J. Pearton

• Growth and Device Performance of GaN Schottky Rectifiers
  
• Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
  
• Rapid Thermal Processing of Implanted GaN Up To 1500°C
  
• Photoelectrochemical Etching of In_xGa_1-xN
  
• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
  
• Properties and Effects of Hydrogen in GaN
  
• Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
  
• Photoluminescence Enhancement and Morphological Properties of Carbon Co-Doped GaN:Er
  
• Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
  
• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
  
• Processing And Device Performance Of GaN Power Rectifiers
  
• Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structure
  
• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  
• A Review of Dry Etching of GaN and Related Materials
  
• Behavior of W and WSi_x Contact Metallization on n- and p-Type GaN
  
• Spectroscopy of Proton Implanted GaN
  
• Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitxy
  
• Surface Conversion Effects in Plasma-Damaged p-GaN
  
• RBS Lattice Site Location and Damage Recovery Studies on Er Implanted GaN
  

B. Pécz

• Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
  

N.T. Pelekanos

• Piezoelectric Properties of GaN Self-Organized Quantum Dots
  
• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.
  
• Strong Piezoelectric Effects in Unstrained GaN Quantum Wells
  

A. Pelzmann

• GaN based LED's with different recombination zones
  
• Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
  
• Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
  
• Determination of the dislocation densities in GaN on c-oriented sapphire
  
• Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
  
• Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  
• GaN Homoepitaxy for Device Applications
  
• Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
  

S.J. Pennycook

• Rapid Thermal Processing of Implanted GaN Up To 1500°C
  

R.V. Penty

• Focused Ion Beam Etching of GaN
  

E. Pereira

• Temperature behaviour of the yellow emission in GaN
  

N.R. Perkins

• Structure of MOVPE Deposited AlN on Si(111)
  

Piotr Perlin

• The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
  
• Effect of internal absorption on cathodoluminescence from GaN
  

Cyril Pernot

• High-Quality Al_xGa_1-xN Using Low Temperature-Interlayer and its Application to UV Detector
  

Ronald E. Perrin

• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
  

W. G. Perry

• Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  

P. Persson

• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
  

Gary A. Petersen

• Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
  
• MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics
  
• Optical Spectroscopy of InGaN Epilayers in the Low Indium Composition Regime
  
• The Behavior of Ion-Implanted Hydrogen in Gallium Nitride
  

A. Petersson

• Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
  

P. M. Petroff

• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
  

Philippe Peyla

• MBE Growth Of GaN Films In Presence Of Surfactants: The Effect Of Mg And Si
  

M. R. Philips

• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
  

M.R. Phillips

• Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaN
  

E. L. Piner

• Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
  
• AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties
  
• Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
  

A. T. Ping

• Dry and Wet Etching for Group III-Nitrides
  
• Characteristics of Ti/Pt/Au Ohmic Contacts on p-Type GaN/A1xGA1-xN Superlattices
  

A. Piotrowska

• Ni/Si-Based Contacts To GaN: Thermally Activated Structural Transformations Leading To Ohmic Behavior
  
• Zirconium Mediated Hydrogen Outdiffusion from p-GaN
  

E.C. Piquette

• Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE
  
• XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces
  

K. H. Ploog

• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
  

Yu. V. Pogorelsky

• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  

U. W. Pohl

• Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine
  

Laura Polenta

• Electrical Measurements in GaN: Point Defects and Dislocations
  

Fred H Pollak

• Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope
  

C. Polley

• Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy
  

A. Y. Polyakov

• GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
  
• High Resistivity Al_xGa_1-xN Layers Grown by MOCVD
  
• Schottky Diodes on MOCVD Grown AlGaN Films.
  
• Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
  

Veaceslav Popa

• Free excitons in strained MOCVD-grown GaN layers
  

Milan Pophristic

• Time-Resolved Spectroscopy of InGaN
  

Y.M. Popov

• Electron Beam Pumped MQW InGaN/GaN Laser
  

Dirk Porezag

• GaN Nanotubes
  

S. Porowski

• GaN Homoepitaxy for Device Applications
  
• Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
  
• Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
  
• Highly Chemical Reactive Ion Etching of Gallium Nitride
  
• Mg Segregation, Difficulties of P-Doping in GaN
  
• Near Defect Free GaN Substrates
  
• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals
  
• Surface morphology of as grown and annealed bulk GaN crystals
  
• Recent Results in the Crystal Growth of GaN at High N₂ Pressure
  

M. Potemski

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  

G. Pozina

• Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
  
• Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  
• Optical Properties of GaNAs Grown by MBE
  
• Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells
  
• Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
  

Savarimuthu Prakash

• Activation of Beryllium-Implanted GaN by Two-Step Annealing
  

Edward A. Preble

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  
• Advanced PENDEOEPITAXY(TM) of GaN and Al_xGa_1-xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
  

V. G. Prokofyev

• Novel approach to simulation of group-III nitrides growth by MOVPE
  

Tat'yana I. Prokofyeva

• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
  

P. Provencio

• Microstructure of GaN Grown on (111) Si by MOCVD
  

Thomas Prunty

• Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
  

Jolanta Prywer

• GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen
  

H. Przbylinski

• Spectroscopy of Proton Implanted GaN
  

I. N. Przhevalskii

• Thermodynamic properties of group-III nitrides and related species
  
• Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
  

A.J. Ptak

• Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire
  
• An Investigation of Long and Short Time-Constant Persistent Photoconductivity in Undoped GaN Grown by RF-Plasma Assisted Molecular Beam Epitaxy
  
• Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources
  
• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  

B. Pushnyi

• Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique
  
• Macro- and microstrains in MOCVD-grown GaN
  
• Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
  

Index last updated Monday, February 10, 2003 4:39:30 PM.
© 2003 The Materials Research Society