MIJ-NSR Author Index, O

MIJ-NSR Author Index, O

Kevin O'Donnell

Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content
Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam

S. Öberg

Theoretical Studies Of Hydrogen Passivated Substitutional Magnesium Acceptor In Wurzite GaN

Harald Obloh

Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model

R. Odedra

Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.

K. P. O'Donnell

J. Off

H. Ogloh

Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x0.15) Grown by Metal-Organic Chemical Vapor Deposition

Chang Seok Oh

Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN

D. Ohlmann

Optical nonlinearities of Gallium Nitride

T. Ohnishi

Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire

A. Ohtomo

Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire

K. Ohtsuka

Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire

Yoichiro Ohuchi

Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via MOVPE

Hiroaki Okagawa

Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via MOVPE

K. Oki

The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization

S. Oktyabrsky

Hajime Okumura

Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy

Franck OMNES

K. Onabe

Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor Deposition

E.P. O'Reilly

Theory of the Gain Characteristics of InGaN/AlGaN QD Lasers

J. W. Orton

Alexander L. Oruzheinikov

The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys

V. V. Osiko

Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique

A. Osinski

Characteristics of Ti/Pt/Au Ohmic Contacts on p-Type GaN/A1xGA1-xN Superlattices

Andrei V Osinsky

Mark L. O'Steen

A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the In Incorporation Efficiency in InxGa1-x/GaN Heterostructures Grown by RF Plasma-Assisted Molecular Beam Epitaxy

A. O. Ostroumov

Current status of GaN crystal growth by sublimation sandwich technique

N. Otsuka

Growth of InN by MBE

Mark Eddy Overberg

Photoluminescence Enhancement and Morphological Properties of Carbon Co-Doped GaN:Er

Index last updated Monday, February 10, 2003 4:39:28 PM.
© 2003 The Materials Research Society