MIJ-NSR Author Index, N

MIJ-NSR Author Index, N

S. Nagahama

InGaN/GaN/AlGaN-Based LEDs and Laser Diodes

S. Nagai

Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers

Yoshinobu Nakada

Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy

S. Nakamura

Wlodzimierz Nakwaski

Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions

O. H. Nam

Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates

Shingo Nambu

Gon Namkoong

Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE

Yoshiki Naoi

The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/sapphire Templates

F. B. Naranjo

Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

J. Narayan

G. Nataf

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

A. Nazzal

Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure

T.-E. Nee

Processing And Device Performance Of GaN Power Rectifiers

Robert J. Nemanich

Phonon Dynamics and Lifetimes of AlN and GaN Crystallites

B. Neubauer

Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE

Jörg Neugebauer

Hock Min Ng

High Reflectance III-Nitride Bragg Reflectors Grown by Molecular Beam Epitaxy

H.M. Ng

YeeFai Ng

Surface Morphology of GaN: Flat Versus Vicinal Surfaces

R. Niak

Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining

R. Niebuhr

Sergey A. Nikishin

High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

I.P. Nikitina

Andrey E Nikolaev

V. I. Nikolaev

Toshio Nishida

Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors

Leona Nistor

Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content

Shugo Nitta

Do Young Noh

High-temperature structural behavior of Ni/Au Contact on GaN(0001)

Thomas Nohava

P. E. Norris

John E. Northrup

Gerard Nouet Nouet

S.V. Novikov

G. Nowak

Index last updated Monday, February 10, 2003 4:39:26 PM.
© 2003 The Materials Research Society