MIJ-NSR Author Index, M

M.P. Mack

• Electron Beam Pumped MQW InGaN/GaN Laser
  
• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
  

J.D. MacKenzie

• Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitxy
  
• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
  
• Luminescence From Erbium-Doped Gallium Nitride Thin Films
  
• Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
  

Pawel Mackowiak

• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  

L.D. Madsen

• Relaxation Phenomena in GaN/ AlN / 6H-SiC Heterostructures
  
• Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
  

Narihiko Maeda

• Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors
  

T. Maeda

• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
  
• Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
  
• Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Using Tungsten Mask
  

M. Maier

• Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x0.15) Grown by Metal-Organic Chemical Vapor Deposition
  

J. A. Majewski

• Polarization and band offsets of stacking faults in AlN and GaN
  
• Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
  

Yu. N. Makarov

• Thermodynamic properties of group-III nitrides and related species
  
• The role of gaseous species in group-III nitride growth
  
• Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
  
• Current status of GaN crystal growth by sublimation sandwich technique
  
• MOCVD Equipment for Recent Developments towards the Blue and Green Solid State Laser
  
• Novel approach to simulation of group-III nitrides growth by MOVPE
  
• Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
  

Zs. Makkai

• Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
  

F. Malengreau

• XPS study of Au/GaN and Pt/GaN contacts
  

C. H. Malloy

• Evidence for Shallow Acceptor Levels in MBE Grown GaN
  

Sergey S. Mamakin

• Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes
  

S. Mantl

• Determination of the dislocation densities in GaN on c-oriented sapphire
  

F. Manyakhin

• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  
• Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
  
• Avalanche Breakdown Luminescence of InGaN/AlGaN/GaN Heterostructures
  
• Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes
  
• Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Multiple Quantum Wells
  

Zhigang Mao

• Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
  

Hughes Marchand

• Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
  
• Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
  
• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  
• Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  

C. Marinelli

• Focused Ion Beam Etching of GaN
  

G. Marowsky

• Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
  

Ann F. Marshall

• MBE Growth of Nitride-Arsenide Materials for Long Wavelength Optoelectronics
  

K.P. Martin

• Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)
  

G. L. Martinez

• Optical Activation Behavior of Ion Implanted Acceptor Species in GaN
  
• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  

P.H. Maruska

• Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN₂
  

Jean Massies

• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
  
• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
  
• Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
  
• Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE
  

Henry Mathieu

• Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
  

T. Matsuoka

• Phase Separation in wurtzite In_1-x-yGa_xAl_yN
  

J. Matthews

• Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  
• UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
  
• High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
  
• Solar-Blind AlGaN Heterostructure Photodiodes
  

L. S. Mattos

• The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
  

T. Matushita

• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
  

Richard J Matyi

• Dislocation Arrangement in a Thick LEO GaN Film on Sapphire
  

M. Mayer

• Determination of the dislocation densities in GaN on c-oriented sapphire
  
• Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire
  
• GaN based LED's with different recombination zones
  
• Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
  
• Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  
• Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
  

J. H. Mazur

• The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
  
• Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al_xGa_1-xN Layers Grown by MOCVD
  

S. McArthur

• Properties of GaN epilayers grown on misoriented sapphire substrates
  

M.D. McCluskey

• Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
  
• Doping of AlGaN Alloys
  
• Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
  

D McColl

• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  

P.H. McDonald

• Generation Recombination Noise in GaN Photoconductors
  

T.C. McGill

• Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE
  
• XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces
  

F. G. McIntosh

• Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
  

Stuart McKernan

• Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
  

T. Mcnulty

• Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  

Scott A. McPherson

• Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
  
• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
  

M. Mehregany

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  
• Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates
  
• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
  

Yuriy Melnik

• AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy
  
• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
  
• GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  
• Physical Properties of Bulk GaN Crystals Grown by HVPE
  
• A TEM Study of GaN Grown by ELO on (0001) 6H-SiC
  

Th. Metzger

• PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
  

Bruno K. Meyer

• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
  
• Transient four wave mixing experiments on GaN
  
• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
  
• Optical Investigations of AlGaN on GaN Epitaxial Films
  
• Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  

M. Meyyappan

• Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy
  

K. Michael

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  
• Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
  

A. Michel

• Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures
  

P. Michler

• Studies on Carbon As Alternative p-Type Dopant for GaN
  

P. G. Middleton

• Properties of GaN epilayers grown on misoriented sapphire substrates
  
• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  
• The Morphology and Cathodoluminescence of GaN Thin Films
  
• Comparison of Luminescence and Physical Morphologies of GaN Epilayers
  

M.R. Millecchia

• Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire
  

M. G. Mil'vidskii

• GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
  
• Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
  

Juergen Mimkes

• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
  
• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
  

B. Ming

• Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
  

U. K. Mishra

• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
  
• Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
  
• Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
  
• Fabrication and Characterization of GaN Junction Field Effect Transistors
  
• Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  
• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  
• Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
  
• Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
  
• Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
  
• Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
  
• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
  
• Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
  
• Electron Beam Pumped MQW InGaN/GaN Laser
  

M. Misra

• Growth and Doping of AlGaN Alloys by ECR-assisted MBE
  
• Generation Recombination Noise in GaN Photoconductors
  
• A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire Substrates
  
• Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy
  

Nancy Missert

• Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
  

David Mistele

• Electron Beam Pumping in Nitride Vertical Cavities With GaN/A10.25Ga0.75 Bragg Reflectors
  

William C. Mitchel

• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
  

P. Mitev

• Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
  

S. Mitha

• Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
  

Hideto Miyake

• Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via MOVPE
  
• Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Using Tungsten Mask
  
• Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
  

J. Möbius

• Transient four wave mixing experiments on GaN
  

W. Mönch

• Metal Contacts on -GaN
  

I Moerman

• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  
• MOVPE growth optimization of high quality InGaN films.
  
• Study of GaN films grown by metalorganic chemical vapour deposition
  
• Highly Chemical Reactive Ion Etching of Gallium Nitride
  
• Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content
  

A Mohammed

• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  

E. N. Mokhov

• Current status of GaN crystal growth by sublimation sandwich technique
  

M. Moldovan

• An Investigation of Long and Short Time-Constant Persistent Photoconductivity in Undoped GaN Grown by RF-Plasma Assisted Molecular Beam Epitaxy
  

C. H. Molloy

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  

Bela Molnar

• Wet Etching of Ion-Implanted GaN Crystals by AZ-400K Photoresist
  

R J Molnar

• Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope
  

B. Monemar

• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
  
• Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
  
• Electronic Properties of Ga(In)NAs Alloys
  
• Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
  
• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
  
• Optical Properties of GaNAs Grown by MBE
  
• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
  
• Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells
  
• Optical properties of electron-irradiated GaN
  
• Free Excitons in GaN
  
• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
  
• Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
  
• Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  
• Relaxation Phenomena in GaN/ AlN / 6H-SiC Heterostructures
  

Eva Monroy

• Metal/GaN Contacts Studied by Electron Spectroscopies
  
• Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  
• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
  
• Yellow luminescence in Mg-doped GaN
  
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  
• Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
  

T. Monteiro

• Temperature behaviour of the yellow emission in GaN
  

H. Morkoc

• Material Properties of GaN in the Context of Electronic Devices
  
• Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
  
• Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC
  
• Preparation of Sapphire for High Quality III-Nitride Growth
  
• Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence
  
• Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE
  
• Characterization of Flicker Noise in GaN Based Modfets At Low Drain Bias
  
• Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy
  

F. H. Morrissey

• Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and Their Optical Characterization by Micro-Photoluminescence/Raman Mapping
  

Atsushi Motogaito

• Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
  

L G Mourokh

• Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope
  

T.D. Moustakas

• Simulation of a GaN Based Static Induction Transistor
  
• High Reflectance III-Nitride Bragg Reflectors Grown by Molecular Beam Epitaxy
  
• Generation Recombination Noise in GaN Photoconductors
  
• A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire Substrates
  
• Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy
  
• Growth and Doping of AlGaN Alloys by ECR-assisted MBE
  
• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  

T. Mukai

• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
  

Guido Mula

• MBE Growth Of GaN Films In Presence Of Surfactants: The Effect Of Mg And Si
  

E. Muñoz

• Yellow Band and Deep levels in Undoped MOVPE GaN.
  
• Yellow luminescence in Mg-doped GaN
  
• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
  
• Metal/GaN Contacts Studied by Electron Spectroscopies
  
• Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  
• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  
• Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
  
• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
  
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  
• XPS study of Au/GaN and Pt/GaN contacts
  

J. A. Muñoz

• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
  

M. Munzel

• Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
  

M. Murphy

• High Frequency AlGaN/GaN MODFET's
  
• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
  
• Research on GaN MODFET's
  
• Evidence from EELS of Oxygen in the Nucleation Layer of an MBE Grown III-N HEMT
  

J.F. Muth

• Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys
  
• Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
  

Samuel Myers

• MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics
  
• Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
  
• The Behavior of Ion-Implanted Hydrogen in Gallium Nitride
  
• Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium
  
• Optical Spectroscopy of InGaN Epilayers in the Low Indium Composition Regime
  
• Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN
  

Thomas H. Myers

• An Investigation of Long and Short Time-Constant Persistent Photoconductivity in Undoped GaN Grown by RF-Plasma Assisted Molecular Beam Epitaxy
  
• Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources
  
• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  
• Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire
  

K. Mynbaev

• Strain relaxation in GaN layers grown on porous GaN sublayers
  

Marina Mynbaeva

• AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy
  
• Strain relaxation in GaN layers grown on porous GaN sublayers
  

Index last updated Monday, February 10, 2003 4:39:24 PM.
© 2003 The Materials Research Society