MIJ-NSR Author Index, L

D. E. Lacklison

• Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
  
• Evidence for Shallow Acceptor Levels in MBE Grown GaN
  

H. Lakner

• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  

Jack B. Lam

• Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
  
• Microstructure-based Lasing in GaN/AlGaN Separate Confinement Heterostructures
  

E.S. Lambers

• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
  

Walter R.L. Lambrecht

• Electronic Structure and Optical Properties of ZnGeN₂
  
• Theoretical Study of ZnO and Related Mg_xZn_1-xO Alloy Band Structures
  
• Material Properties of GaN in the Context of Electronic Devices
  

R. Langer

• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
  
• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.
  
• Strong Piezoelectric Effects in Unstrained GaN Quantum Wells
  

Guido Langouche

• Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content
  

R. Lantier

• Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
  

Eric C Larkins

• A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence Spectroscopy
  

J. R. La Roche

• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  

P. K. Larsen

• Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD
  
• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals
  

Michael C. Larson

• MBE Growth of Nitride-Arsenide Materials for Long Wavelength Optoelectronics
  

S. S. Lau

• Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures
  

S.S.Lau

• Contact Issues for GaN Technology
  

Marguerite Laugt

• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
  
• p-doping of GaN by MOVPE
  
• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
  

N.N. Ledentsov

• Heterostructure for UV LEDs Based on Thick AlGaN Layers
  

B.K. Lee

• Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE
  

C. -M. Lee

• Growth and Device Performance of GaN Schottky Rectifiers
  
• Processing And Device Performance Of GaN Power Rectifiers
  

C. D. Lee

• Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
  

D.S. Lee

• Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE
  

Hyung Jae Lee

• Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN
  
• Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  
• Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor
  

Hyung Jae Lee

• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
  

Jong-Lam Lee

• High-temperature structural behavior of Ni/Au Contact on GaN(0001)
  
• Room Temperature Ohmic contact on n-type GaN using plasma treatment
  

J. W. Lee

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  

Jeong Yong Lee

• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
  

Kyoyeol Lee

• Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy
  

Seung Mi Lee

• GaN Nanotubes
  

Won-Hee Lee

• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
  

Young Hee Lee

• GaN Nanotubes
  

P. Lefebvre

• Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
  
• Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
  
• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
  
• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  
• Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
  

H. Leier

• Current limitation after pinch-off in AlGaN/GaN FETs
  

J.R. Leite

• Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature
  

M. Leksono

• A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
  
• High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter
  

François Lelarge

• HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire Substrates
  

A. Lelis

• Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
  

Mathieu Leroux

• Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
  
• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
  
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  
• p-doping of GaN by MOVPE
  
• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
  
• Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
  
• Temperature behaviour of the yellow emission in GaN
  
• Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE
  

M. Lesczczynski

• GaN Homoepitaxy for Device Applications
  

Luke F. Lester

• Fabrication and Characterization of GaN Junction Field Effect Transistors
  
• Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
  

Michal Leszczynski

• Thermal Expansion of GaN at Low Temperatures - A Comparison of Bulk and Homo- and Heteroepitaxial Layers
  
• High quality GaN films - growth and properties
  
• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.
  
• Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
  
• Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
  

B. H. Leung

• Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
  

R. Levy

• Optical nonlinearities of Gallium Nitride
  

E. Herbert Li

• Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
  

Jing Li

• Correlation Between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity In AlGaN/GaN Modulation Doped Heterostructures
  
• Cubic InGaN Grown by MOCVD
  

Jizhong Li

• Correlation Between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity In AlGaN/GaN Modulation Doped Heterostructures
  
• Solar-Blind AlGaN Heterostructure Photodiodes
  

L.Y. Li

• Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
  

L. K. Li

• High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer
  

P. Li

• The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy
  

W. Li

• Free Excitons in GaN
  
• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
  

W. Li

• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
  

X. Li

• Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy
  
• GaN: From Selective Area Epitaxy To Epitaxial Lateral Overgrowth
  

S. Liang

• Properties of Epitaxial ZnO Thin Films for GaN and Related Applications
  

Z. Liliental-Weber

• Epitaxial Growth and Orientation of GaN on (1 0 0) -LiAlO2
  
• Contact Issues for GaN Technology
  
• Mg Segregation, Difficulties of P-Doping in GaN
  
• The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
  
• Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al_xGa_1-xN Layers Grown by MOCVD
  
• TEM Study of Defects in Laterally Overgrown GaN Layers
  

Kee Young Lim

• Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  
• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
  
• Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN
  

W. Limmer

• Temperature Distribution in InGaN-MQW LEDs Under Operation
  

Sukit Limpijumnong

• Theoretical Study of ZnO and Related Mg_xZn_1-xO Alloy Band Structures
  
• Electronic Structure and Optical Properties of ZnGeN₂
  

J. Lin

• Material Properties of GaN in the Context of Electronic Devices
  
• Luminescence From Erbium-Doped Gallium Nitride Thin Films
  
• Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence
  

J.Y. Lin

• Growth and Characterization of B_xGa_1-xN on 6H-SiC (0001) by MOVPE
  
• Correlation Between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity In AlGaN/GaN Modulation Doped Heterostructures
  

Lanying Lin

• GaN m-i-n LED grown by MOVPE
  

J.L. Lindstrom

• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
  

L. Lindström

• Optical properties of electron-irradiated GaN
  

K.J. Linthicum

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  
• Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
  
• Characterization of Be-Implanted GaN Annealed At High Temperatures
  
• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
  
• Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
  
• Advanced PENDEOEPITAXY(TM) of GaN and Al_xGa_1-xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
  
• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
  
• Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates
  

K. Lischka

• Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature
  
• Mechanisms of Optical Gain in Cubic GaN and InGaN
  
• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
  
• Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs
  
• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
  

Marko Lisker

• Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
  
• Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs
  
• Defect States in SiC/GaN -and SiC/GaN /AlGaN- Heterostructures Characterized by Admittance and Photocurrent Spectroscopy
  

Brian Dean Little

• Microstructure-based Lasing in GaN/AlGaN Separate Confinement Heterostructures
  
• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
  
• Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
  

C.W. Litton

• High Quality Hydrothermal ZnO Crystals
  

B. Liu

• Wet Chemical Etching of AlN Single Crystals
  
• Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates
  
• New Technique for Sublimation Growth of AlN Single Crystals
  

Bo Liu

• A Thermodynamic Approach to Ohmic Contact Formation to p-GaN
  

Lianghong Liu

• Wet Chemical Etching of AlN Single Crystals
  
• Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates
  
• New Technique for Sublimation Growth of AlN Single Crystals
  

Xianglin Liu

• GaN m-i-n LED grown by MOVPE
  

X. H. Liu

• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
  

Z. G. Liu

• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
  

Mauro Lomascolo

• Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
  

Frederick H Long

• Time-Resolved Spectroscopy of InGaN
  

David C Look

• Electrical Measurements in GaN: Point Defects and Dislocations
  
• High Quality Hydrothermal ZnO Crystals
  
• Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy
  
• Electrical Profiles in GaN/Al₂O₃ Layers with Conductive Interface Regions
  

K. Lorenz

• Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
  

P. Lorenzini

• Yellow Band and Deep levels in Undoped MOVPE GaN.
  
• p-doping of GaN by MOVPE
  
• Alternative N precursors and Mg doped GaN grown by MOVPE
  

M. Losurdo

• GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry
  

J.R. Lothian

• Behavior of W and WSi_x Contact Metallization on n- and p-Type GaN
  

H. J. Lozykowski

• Visible and Infrared Emission of GaN:Er Thin Films Grown by Sputtering
  
• Photoluminescence and Cathodoluminescence of GaN Doped With Pr
  

Da-cheng Lu

• GaN m-i-n LED grown by MOVPE
  

D.Q. Lu

• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
  

L.W. Lu

• Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions
  

Y. Lu

• Properties of Epitaxial ZnO Thin Films for GaN and Related Applications
  

M. Lubbers

• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
  

B. Lucznik

• Recent Results in the Crystal Growth of GaN at High N₂ Pressure
  

Martin Luebbers

• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
  

Paolo Lugli

• Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
  

M. Lukitsch

• Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
  

W. V. Lundin

• Heterostructure for UV LEDs Based on Thick AlGaN Layers
  
• Macro- and microstrains in MOCVD-grown GaN
  

A.V. Lunev

• Heterostructure for UV LEDs Based on Thick AlGaN Layers
  

H. Luth

• Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
  

Index last updated Monday, February 10, 2003 4:39:20 PM.
© 2003 The Materials Research Society