MIJ-NSR Author Index, K

L. Kadinski

• MOCVD Equipment for Recent Developments towards the Blue and Green Solid State Laser
  

Satoshi Kako

• Emission at 247 nm from GaN Quantum Wells Grown by MOCVD
  

E. V. Kalashnikov

• Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
  

E.V. Kalinina

• GaN p-n Structures Fabricated by Mg Ion Implantation
  

Eliana Kaminska

• Zirconium Mediated Hydrogen Outdiffusion from p-GaN
  
• Ni/Si-Based Contacts To GaN: Thermally Activated Structural Transformations Leading To Ohmic Behavior
  

M. Kaminska

• AMMONO method of BN, AlN and GaN synthesis and crystal growth.
  
• Paramagnetic defects in GaN
  

Satoshi Kamiyama

• Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes
  
• Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells
  

Markus Kamp

• Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
  
• GaN Homoepitaxy for Device Applications
  
• Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
  
• GaN based LED's with different recombination zones
  
• Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
  
• Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
  
• Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
  
• Temperature Distribution in InGaN-MQW LEDs Under Operation
  
• Determination of the dislocation densities in GaN on c-oriented sapphire
  
• Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire
  
• Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  

T. U. Kampen

• Metal Contacts on -GaN
  

Hyoung Ho Kang

• TEM Study of Bulk AlN Growth by Physical Vapor Transport
  

Sangbeom Kang

• Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
  

Theodoros Karakostas

• The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride
  

G. Karczewski

• Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
  

Michihiko Kariya

• Mass Transport, Faceting and Behavior of Dislocations in GaN
  

R. F. Karlicek

• The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
  

Fouad Karouta

• Highly Chemical Reactive Ion Etching of Gallium Nitride
  

S. Yu. Karpov

• Suppression of phase separation in InGaN due to elastic strain
  
• The role of gaseous species in group-III nitride growth
  
• Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
  
• Current status of GaN crystal growth by sublimation sandwich technique
  
• Thermodynamic properties of group-III nitrides and related species
  
• Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
  
• Novel approach to simulation of group-III nitrides growth by MOVPE
  

Axel Kaschner

• Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
  
• Influence of Doping on the Lattice Dynamics GaN
  

Kathleen Kash

• Growth of Oriented Thick Films of Gallium Nitride From the Melt
  

Takayuki Kashima

• Mass Transport, Faceting and Behavior of Dislocations in GaN
  
• High-Quality Al_xGa_1-xN Using Low Temperature-Interlayer and its Application to UV Detector
  
• Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
  

Alexander Kasic

• Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman Spectroscopy
  
• Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
  

Thomas M. Katona

• Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
  

M. Katsuragawa

• Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
  

Yasutoshi Kawaguchi

• Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
  
• Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Using Tungsten Mask
  
• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  

H. Kawanishi

• Characteristic Temperature Estimation for GaN-Based Lasers
  

M. Kawasaki

• Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire
  

Thomas Kehagias

• The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride
  

S. Keller

• Electron Beam Pumped MQW InGaN/GaN Laser
  
• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
  
• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  
• Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
  
• Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  
• Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
  
• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
  
• Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
  
• Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
  

M. Kelly

• Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
  

T.A. Kennedy

• Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
  

David M Keogh

• AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties
  

Asif Khan

• Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?
  
• Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates
  

F. Khan

• Dry and Wet Etching for Group III-Nitrides
  
• Characteristics of Ti/Pt/Au Ohmic Contacts on p-Type GaN/A1xGA1-xN Superlattices
  

M. A. Khan

• Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
  

J.S. Khim

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  

J. Kikawa

• Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor Deposition
  

B.j. Kim

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  

Chong Cook Kim

• Structural Evolution of GaN During Initial Stage MOCVD Growth
  
• High-temperature structural behavior of Ni/Au Contact on GaN(0001)
  

Chi Sun Kim

• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
  
• Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN
  

E. Kim

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  

H.S. Kim

• Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence
  

Ig-Hyeon Kim

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  

Jong-Hee Kim

• Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  

Jong Kyu Kim

• High-temperature structural behavior of Ni/Au Contact on GaN(0001)
  
• Room Temperature Ohmic contact on n-type GaN using plasma treatment
  

Ki Soo Kim

• Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN
  
• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
  

S. Kim

• Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy
  

T.I. Kim

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  

W. Kim

• Characterization of Flicker Noise in GaN Based Modfets At Low Drain Bias
  
• Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy
  

T. Kimura

• Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor Deposition
  

Atsuhiro Kinoshita

• Optical Properties of AlGaN Quantum Well Structures
  
• Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
  

C. Kirchner

• GaN based LED's with different recombination zones
  
• Temperature Distribution in InGaN-MQW LEDs Under Operation
  
• GaN Homoepitaxy for Device Applications
  
• Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
  
• Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
  
• Determination of the dislocation densities in GaN on c-oriented sapphire
  

Verena Kirchner

• Thermal Expansion of GaN at Low Temperatures - A Comparison of Bulk and Homo- and Heteroepitaxial Layers
  
• Studies on Carbon As Alternative p-Type Dopant for GaN
  

O. Kirfel

• Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
  

V. Kirilyuk

• Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD
  

Christian Kisielowski

• The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
  
• Effect of internal absorption on cathodoluminescence from GaN
  

J.J. Klaassen

• Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy
  
• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  

Harald Klausing

• Electron Beam Pumping in Nitride Vertical Cavities With GaN/A10.25Ga0.75 Bragg Reflectors
  

M. Klein

• Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine
  

W. Knap

• Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
  

M. Kneissl

• Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
  
• Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
  
• Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
  

Klaus Knobloch

• Effect of internal absorption on cathodoluminescence from GaN
  

Naoki Kobayashi

• Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors
  

J. Koch

• Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
  

F.A. Koeck

• A Critical Comparison Between MBE and MOVPE Growth of III-V Nitride Heterostructures for Optoelectronic Device Applications
  

Klaus Köhler

• Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
  

Masayoshi Koike

• Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers
  

K. Koinuma

• Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire
  

A. Kojima

• Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers
  

R.M. Kolbas

• Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys
  

Daniel D Koleske

• GaN Decomposition in Ammonia
  
• Enhanced GaN Decomposition At MOVPE Pressures
  
• Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
  

H. Kollmer

• The role of piezoelectric fields in GaN-based quantum wells
  
• Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
  

Philomela Komninou

• The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride
  

M.E. Kompan

• Photoluminescence of FS-GaN Treated in Alcoholic Sulfide Solutions
  

E.V. Konenkova

• Photoluminescence of FS-GaN Treated in Alcoholic Sulfide Solutions
  

Hua-Shuang Kong

• Microstructure-based Lasing in GaN/AlGaN Separate Confinement Heterostructures
  
• Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
  
• A Critical Comparison Between MBE and MOVPE Growth of III-V Nitride Heterostructures for Optoelectronic Device Applications
  

O. Konovalov

• Strong Piezoelectric Effects in Unstrained GaN Quantum Wells
  
• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.
  

R. F. Kopf

• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  

Dimitris Korakakis

• A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence Spectroscopy
  
• Growth and Doping of AlGaN Alloys by ECR-assisted MBE
  
• Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
  

R. Korbutowicz

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  

Martin E. Kordesch

• Visible Luminescent Activation of Amorphous AlN:Eu Thin-Film Phosphors with Oxygen
  
• Optical Properties of Manganese Doped Amorphous and Crystalline Aluminum Nitride Films
  
• Growth of Oriented Thick Films of Gallium Nitride From the Melt
  
• Visible and Infrared Emission of GaN:Er Thin Films Grown by Sputtering
  

K. Kornitzer

• Current limitation after pinch-off in AlGaN/GaN FETs
  

R. Y. Korotkov

• Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy
  

F. K. Koschnick

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  
• Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
  
• Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
  
• DLTS Characterization of Defects Introduced During Sputter Deposition of Au Schottky Contacts on n-GaN
  

I.M. Kotelyanskii

• New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type A^IIIB^V on sapphire substrates
  

M.J. Kotelyanskii

• New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type A^IIIB^V on sapphire substrates
  

C. Kothandaraman

• Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  

I. Kotousova

• Strain relaxation in GaN layers grown on porous GaN sublayers
  

A. N. Kovalev

• Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Multiple Quantum Wells
  
• Avalanche Breakdown Luminescence of InGaN/AlGaN/GaN Heterostructures
  
• Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
  
• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  
• Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes
  

A. P. Kovarsky

• Direct SIMS Determination of the In_xGa_1-xN Mole Fraction
  
• GaN p-n Structures Fabricated by Mg Ion Implantation
  
• In-depth Analysis of the Impurities in GaN
  

F. Koyama

• Characteristic Temperature Estimation for GaN-Based Lasers
  

V.I. Kozlovsky

• Electron Beam Pumped MQW InGaN/GaN Laser
  

J. Kozlowski

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  

Peter Kozodoy

• Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
  
• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
  
• Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  

J. Kozubowski

• Ni/Si-Based Contacts To GaN: Thermally Activated Structural Transformations Leading To Ohmic Behavior
  

J. Krasinski

• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
  

D. M. Krasovitsky

• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  

V.B. Kravchenko

• New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type A^IIIB^V on sapphire substrates
  

I. V. Kravetsky

• Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
  

Yu. L. Kretser

• Direct SIMS Determination of the In_xGa_1-xN Mole Fraction
  

Wilhelm Kriegseis

• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
  
• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
  

S. Krishnamurthy

• Computational Materials Science, An Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences
  

Subash Krishnankutty

• UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
  
• Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
  
• High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
  
• Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  

Alois Krost

• Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
  

A. Krtschil

• Defect States in SiC/GaN -and SiC/GaN /AlGaN- Heterostructures Characterized by Admittance and Photocurrent Spectroscopy
  
• Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs
  

Joachim Krueger

• Effect of internal absorption on cathodoluminescence from GaN
  

S. Krukowski

• Surface morphology of as grown and annealed bulk GaN crystals
  
• Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
  
• Recent Results in the Crystal Growth of GaN at High N₂ Pressure
  
• Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
  
• GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen
  

B.S. Krusor

• Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
  

A.B. Krysa

• Electron Beam Pumped MQW InGaN/GaN Laser
  

A. Kryzhanovski

• Strain relaxation in GaN layers grown on porous GaN sublayers
  

T. S. Kuan

• Structural Properties of Laterally Overgrown GaN
  

T. S. Kuan

• Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy
  

Martin Kuball

• A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence Spectroscopy
  
• New Technique for Sublimation Growth of AlN Single Crystals
  
• Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and Their Optical Characterization by Micro-Photoluminescence/Raman Mapping
  
• Thermal Stability of GaN Investigated by Raman Scattering
  
• Focused Ion Beam Etching of GaN
  
• The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films
  

Yu A. Kudriavtsev

• Direct SIMS Determination of the In_xGa_1-xN Mole Fraction
  
• Heterostructure for UV LEDs Based on Thick AlGaN Layers
  
• Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
  

V. E. Kudryashov

• Luminescence Spectra Of Superbright Blue and Green InGaN/AlGaN/GaN Light-Emitting Diodes
  
• Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes
  
• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  
• Avalanche Breakdown Luminescence of InGaN/AlGaN/GaN Heterostructures
  
• Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Multiple Quantum Wells
  

T.F. Kuech

• Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy
  
• The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GaN
  
• Dislocation Arrangement in a Thick LEO GaN Film on Sapphire
  
• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
  
• Structure of MOVPE Deposited AlN on Si(111)
  
• Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy
  
• Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium Nitride
  
• Gallium Nitride Growth Using Diethylgallium Chloride As An Alternative Gallium Source
  
• Structural Properties of Laterally Overgrown GaN
  

B. Kuhn

• Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
  

K. Kunc

• Bandgap Variation at the Isostructural Phase Transformation of Wurtzite InN
  

P. Kung

• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  

Michael Kunzer

• Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
  
• Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x0.15) Grown by Metal-Organic Chemical Vapor Deposition
  

P-K. Kuo

• Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
  

Akito Kuramata

• Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
  

N. Kuwano

• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  

N.I. Kuznetsov

• Strain relaxation in GaN layers grown on porous GaN sublayers
  
• GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  

D. Kwon

• Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
  

Yong-Hwan Kwon

• Microstructure-based Lasing in GaN/AlGaN Separate Confinement Heterostructures
  

Yong-Hwan Kwon

• Comparison Study of Structural and Optical Properties of In_xGa_1-xN/GaN Quantum Wells With Different In Compositions
  

Eun-Kyung Suh

• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
  

R. Kyutt

• Macro- and microstrains in MOCVD-grown GaN
  

Index last updated Monday, February 10, 2003 4:39:18 PM.
© 2003 The Materials Research Society